STP35N65M5 Equivalent & Substitute Parts

Part Overview

The STP35N65M5 is an N-Channel 650V 27A MOSFET manufactured by STMicroelectronics in the MDmesh™ V series, housed in a TO-220-3 through-hole package. This device is rated for 160W power dissipation at the case temperature and features a maximum drain-source voltage of 650V with continuous drain current of 27A at 25°C.

The STP35N65M5 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	27	A
On-State Resistance (Rds On Max) @ 13.5A, 10V	98	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	5	V
Gate Charge (Qg Max) @ 10V	83	nC
Power Dissipation (Max)	160	W
Operating Temperature (TJ)	150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the STP35N65M5 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 650V
Continuous Drain Current (Id): Must equal or exceed 27A at 25°C
On-State Resistance (Rds On): Must be compatible with circuit requirements
Gate Threshold Voltage (Vgs(th)): Must fall within acceptable operating range
Package Type: Must be TO-220-3 through-hole configuration
Mounting Type: Must support through-hole PCB assembly

Substitution Categories:

Direct Equivalent: Parts that maintain identical or superior electrical specifications with active product status and current manufacturing support.

Similar Equivalent: Parts that meet or exceed the primary electrical parameters but may have variations in secondary characteristics such as gate charge, input capacitance, or power dissipation ratings. These parts accommodate the functional requirements of the STP35N65M5 within acceptable design margins.

Parameter Comparison

Parameter	STP35N65M5	STP38N65M5	AOT42S60L	SIHP33N60EF-GE3	TK31E60W,S1VX
Manufacturer	STMicroelectronics	STMicroelectronics	Alpha & Omega Semiconductor Inc.	Vishay Siliconix	Toshiba Semiconductor and Storage
Vdss (V)	650	650	600	600	600
Id @ 25°C (A)	27	30	37	33	30.8
Rds On Max (mOhm)	98 @ 13.5A, 10V	95 @ 15A, 10V	99 @ 21A, 10V	98 @ 16.5A, 10V	88 @ 15.4A, 10V
Vgs(th) Max (V)	5 @ 250µA	5 @ 250µA	3.8 @ 250µA	4 @ 250µA	3.7 @ 1.5mA
Qg Max (nC)	83 @ 10V	71 @ 10V	40 @ 10V	155 @ 10V	86 @ 10V
Power Dissipation Max (W)	160	190	417	278	230
Operating Temperature (°C)	150	150	-55 to 150	-55 to 150	150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Not For New Designs	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

STP38N65M5 (STMicroelectronics)

The STP38N65M5 is the primary recommended substitute for the obsolete STP35N65M5. Both devices are manufactured by STMicroelectronics within the same MDmesh™ V series and share identical voltage ratings of 650V. The STP38N65M5 provides superior continuous drain current (30A versus 27A) and increased power dissipation capability (190W versus 160W), ensuring full functional compatibility with existing circuit designs. The STP38N65M5 maintains active product status with current manufacturing support and ROHS3 compliance. On-state resistance remains comparable at 95mOhm, and gate charge is reduced to 71nC, offering improved switching performance. This part is available in tube packaging with 5650 units in stock.

SIHP33N60EF-GE3 (Vishay Siliconix)

The SIHP33N60EF-GE3 serves as an alternative substitute with active product status. This device operates at 600V drain-source voltage, which is 50V lower than the STP35N65M5 but remains suitable for applications not requiring the full 650V rating. The continuous drain current of 33A exceeds the original specification of 27A. On-state resistance is maintained at 98mOhm. The extended operating temperature range of -55°C to 150°C provides additional thermal flexibility compared to the STP35N65M5. ROHS3 compliance and TO-220-3 package compatibility are confirmed. This part is available in tube packaging with 1835 units in stock.

TK31E60W,S1VX (Toshiba Semiconductor and Storage)

The TK31E60W,S1VX is an active substitute from Toshiba's DTMOSIV series, rated at 600V with continuous drain current of 30.8A. This device features the lowest on-state resistance among all substitutes at 88mOhm, providing superior conduction efficiency. Gate charge is comparable at 86nC. The 600V rating is suitable for applications where the full 650V specification is not required. ROHS3 compliance and TO-220-3 package compatibility are confirmed. This part is available in tube packaging with 960 units in stock.

AOT42S60L (Alpha & Omega Semiconductor Inc.)

The AOT42S60L is classified as "Not For New Designs" and is not recommended for new applications. However, this device is listed for reference due to its presence in the substitute network. It operates at 600V with the highest continuous drain current rating of 37A and exceptional power dissipation capability of 417W. The on-state resistance is 99mOhm. This part carries ROHS3 compliance and TO-220-3 package compatibility. Use of this part should be limited to legacy system maintenance only.

Frequently Asked Questions (FAQ)

Q: Can the STP38N65M5 directly replace the STP35N65M5 in existing designs?

A: Yes. The STP38N65M5 is a direct substitute. Both devices share identical 650V drain-source voltage ratings, the same TO-220-3 package configuration, and comparable on-state resistance characteristics. The STP38N65M5 provides higher continuous drain current (30A versus 27A) and increased power dissipation (190W versus 160W), making it functionally superior for the same application space. No circuit modifications are required.

Q: What is the significance of the 650V versus 600V voltage rating difference?

A: The STP35N65M5 is rated for 650V drain-source voltage, while SIHP33N60EF-GE3, TK31E60W,S1VX, and AOT42S60L are rated for 600V. The 50V difference represents the maximum voltage the device can withstand between drain and source terminals. Applications operating at voltages below 600V can use the 600V-rated substitutes without functional impact. Applications requiring the full 650V rating must use the STP38N65M5 or remain with the original STP35N65M5.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes. All substitute parts listed are housed in TO-220-3 through-hole packages with identical pin configurations. This ensures mechanical and electrical compatibility with existing PCB layouts and assembly processes. No modifications to board design or assembly procedures are necessary.

Q: What is the difference between "Active" and "Not For New Designs" product status?

A: "Active" status indicates the manufacturer continues production and provides full technical support. Parts with "Active" status are suitable for new designs and long-term production commitments. "Not For New Designs" status indicates the manufacturer has discontinued active development but may continue limited production for legacy support. The AOT42S60L carries this designation and should be used only for maintenance of existing systems, not for new product development.

Q: How do on-state resistance values affect circuit performance?

A: On-state resistance (Rds On) determines the voltage drop across the MOSFET when conducting current. Lower Rds On values result in reduced power dissipation and improved efficiency. The STP35N65M5 specifies 98mOhm at 13.5A and 10V gate voltage. Substitute parts maintain comparable or superior Rds On values: STP38N65M5 at 95mOhm, SIHP33N60EF-GE3 at 98mOhm, and TK31E60W,S1VX at 88mOhm. These variations are within acceptable design margins for most applications.

Q: What does gate charge (Qg) represent and why does it vary among substitutes?

A: Gate charge is the total charge required to switch the MOSFET from off to on state at a specified gate voltage. Lower gate charge values enable faster switching and reduce driver power requirements. The STP35N65M5 specifies 83nC at 10V. The STP38N65M5 offers improved performance at 71nC, while the AOT42S60L provides the lowest gate charge at 40nC. Higher gate charge values, such as the SIHP33N60EF-GE3 at 155nC, require more robust gate drive circuits but do not prevent substitution.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed carry ROHS3 compliance certification, matching the environmental and regulatory requirements of the original STP35N65M5. This ensures compatibility with procurement standards and regulatory frameworks applicable to the original component.

Q: Why is the STP35N65M5 classified as obsolete?

A: Obsolete status indicates the manufacturer has discontinued production and no longer provides technical support or warranty coverage. The STP35N65M5 remains available through existing inventory channels (1350 units in stock), but long-term supply cannot be guaranteed. Substitution to active-status alternatives such as the STP38N65M5 is recommended for new production runs and future design iterations.

Q: Can I use a substitute part with lower power dissipation rating than the original?

A: No. The substitute part must equal or exceed the power dissipation rating of the original component. The STP35N65M5 is rated for 160W. All listed substitutes meet or exceed this specification: STP38N65M5 at 190W, SIHP33N60EF-GE3 at 278W, TK31E60W,S1VX at 230W, and AOT42S60L at 417W. Using a part with lower power dissipation rating may result in thermal failure under normal operating conditions.

Q: What inventory levels are available for each substitute part?

A: Current inventory levels are as follows: STP38N65M5 (5650 units), AOT42S60L (2300 units), SIHP33N60EF-GE3 (1835 units), and TK31E60W,S1VX (960 units). The STP38N65M5 offers the highest availability, supporting large-volume production requirements.

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