STP35N65DM2 Equivalent & Substitute Parts

Part Overview

The STP35N65DM2 is an N-Channel 650V 32A MOSFET manufactured by STMicroelectronics, housed in a TO-220-3 package. This device belongs to the MDmesh™ DM2 series and is designed for high-voltage switching applications requiring robust performance in industrial and power conversion circuits. The part is currently Active in product status with 1477 pieces in stock inventory. Substitute parts are identified when equivalent electrical performance is required but alternative packaging, thermal characteristics, or sourcing conditions necessitate component replacement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	32	A
On-State Resistance (Rds On) @ 16A, 10V	110	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	56.3	nC
Power Dissipation (Max)	250	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the STP35N65DM2 are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalent (Package Variant): The STW35N65DM2 shares identical electrical specifications with the main part, including Vdss (650V), Id (32A), Rds On (110mOhm @ 16A, 10V), gate charge (56.3 nC @ 10V), and power dissipation (250W). The primary difference is the package format: TO-247-3 instead of TO-220-3. Both devices are from the MDmesh™ DM2 series and maintain full electrical compatibility. This substitution is valid when thermal management requirements or PCB layout constraints favor the TO-247-3 package geometry.

Similar Manufacturer Part (Electrical Compromise): The FCP130N60 from Fairchild Semiconductor represents a functional alternative with acceptable deviations in specific parameters. This device operates at a lower Vdss rating (600V versus 650V), reduced continuous drain current (28A versus 32A), higher on-state resistance (130mOhm versus 110mOhm), and increased gate charge (70 nC versus 56.3 nC). The FCP130N60 maintains the same TO-220-3 package and operating temperature range. This substitution is applicable only when the application voltage ceiling does not exceed 600V and current requirements do not exceed 28A.

Substitution eligibility is determined by the following key parameters:

Drain to Source Voltage (Vdss)
Continuous Drain Current (Id)
On-State Resistance (Rds On)
Gate Charge (Qg)
Package Type
Power Dissipation capability

Parameter Comparison

Parameter	STP35N65DM2	STW35N65DM2	FCP130N60	Unit
Manufacturer	STMicroelectronics	STMicroelectronics	Fairchild Semiconductor	—
FET Type	N-Channel	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	650	650	600	V
Continuous Drain Current (Id) @ 25°C	32	32	28	A
On-State Resistance (Rds On)	110 @ 16A, 10V	110 @ 16A, 10V	130 @ 14A, 10V	mOhm
Gate Threshold Voltage (Vgs(th))	5 @ 250µA	5 @ 250µA	3.5 @ 250µA	V
Gate Charge (Qg) @ 10V	56.3	56.3	70	nC
Input Capacitance (Ciss)	2540 @ 100V	2540 @ 100V	3590 @ 380V	pF
Power Dissipation (Max)	250	250	278	W
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C
Package Type	TO-220-3	TO-247-3	TO-220-3	—
Mounting Type	Through Hole	Through Hole	Through Hole	—
Product Status	Active	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Not specified	—
REACH Status	REACH Unaffected	REACH Unaffected	Not specified	—

Engineering Selection Recommendations

STW35N65DM2 Selection Criteria: This substitute is recommended when the application requires identical electrical performance to the STP35N65DM2 but the TO-247-3 package offers superior thermal management or improved PCB layout efficiency. Both devices carry Active product status, ROHS3 compliance, and REACH Unaffected designation. The STW35N65DM2 maintains 1793 pieces in stock inventory. Selection of this variant introduces no electrical performance compromise and is suitable for direct substitution in applications where package geometry is the determining factor.

FCP130N60 Selection Criteria: This substitute is applicable only when the application operates within reduced voltage and current specifications. The 600V Vdss rating and 28A continuous drain current represent the limiting factors for this device. The FCP130N60 is suitable for applications where the maximum system voltage does not exceed 600V and peak current demands remain below 28A. The higher on-state resistance (130mOhm versus 110mOhm) and increased gate charge (70 nC versus 56.3 nC) result in higher switching losses and power dissipation. This device maintains Active product status and identical operating temperature range. Compliance certifications for this part are not specified in the provided data.

Both substitute options maintain Active product status and through-hole mounting compatibility with the original STP35N65DM2.

Frequently Asked Questions (FAQ)

Q: Can the STW35N65DM2 be used as a direct replacement for the STP35N65DM2?

A: Yes. The STW35N65DM2 is electrically identical to the STP35N65DM2 across all critical parameters: Vdss (650V), Id (32A), Rds On (110mOhm), gate charge (56.3 nC), and power dissipation (250W). The only difference is the package format (TO-247-3 versus TO-220-3). Both are through-hole mounted devices from the MDmesh™ DM2 series. Substitution is valid when the TO-247-3 package dimensions are compatible with the PCB layout.

Q: What are the limitations of using the FCP130N60 as a substitute?

A: The FCP130N60 operates at a lower voltage rating (600V versus 650V) and reduced current capacity (28A versus 32A). The on-state resistance is higher (130mOhm versus 110mOhm), resulting in increased power dissipation during switching. Gate charge is also higher (70 nC versus 56.3 nC), leading to slower switching transitions. This device is suitable only for applications where the system voltage does not exceed 600V and current requirements remain below 28A.

Q: Are there package compatibility considerations between TO-220-3 and TO-247-3?

A: Yes. The TO-220-3 and TO-247-3 packages have different physical dimensions and pin spacing. The TO-247-3 package is larger and features different lead geometry. PCB footprints are not interchangeable without layout modification. Verify that the target PCB design accommodates the TO-247-3 package before selecting the STW35N65DM2.

Q: What compliance certifications apply to each substitute?

A: The STP35N65DM2 and STW35N65DM2 are both ROHS3 compliant and REACH Unaffected. The FCP130N60 compliance certifications are not specified in the provided technical data. Verify compliance requirements with the component supplier before final selection.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The STP35N65DM2 and STW35N65DM2 both require 56.3 nC at 10V. The FCP130N60 requires 70 nC, representing a 24% increase. Higher gate charge results in longer switching times and increased driver power consumption. Driver circuits must be verified to supply sufficient current for the selected device.

Q: Can the FCP130N60 be used in a 650V application?

A: No. The FCP130N60 is rated for a maximum Vdss of 600V. Using this device in a 650V application exceeds its voltage rating and risks device failure or degradation. The STP35N65DM2 or STW35N65DM2 must be used for applications requiring 650V operation.

Q: What is the difference between the two STMicroelectronics devices?

A: The STP35N65DM2 and STW35N65DM2 are electrically identical but differ in package type. The STP35N65DM2 uses TO-220-3 packaging, while the STW35N65DM2 uses TO-247-3 packaging. The TO-247-3 package typically offers improved thermal performance due to larger lead geometry and enhanced heat dissipation characteristics. Selection depends on PCB layout requirements and thermal management strategy.

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