STP35N60DM2 Equivalent & Substitute Parts

Part Overview

The STP35N60DM2 is an N-Channel 600V 28A MOSFET manufactured by STMicroelectronics in the MDmesh™ DM2 series. This device is packaged in TO-220-3 through-hole configuration and is rated for 210W power dissipation at case temperature. The part is currently Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are necessary when the primary device is unavailable, when alternative packaging formats are required for thermal or mechanical integration, or when design specifications allow for parametric variations within acceptable operating ranges.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	28	A
Rds On (Max) @ 14A, 10V	110	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	54	nC
Input Capacitance (Ciss) @ 100V	2400	pF
Power Dissipation (Max)	210	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
FET Type	N-Channel	—

Substitute Part Grouping Explanation

Substitution of the STP35N60DM2 is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a Drain to Source Voltage (Vdss) of 600V or higher to ensure safe operation in the same circuit topology.

Current Rating: Continuous drain current must be equal to or greater than 28A at 25°C to support the same load conditions.

On-Resistance (Rds On): The maximum on-resistance at specified gate and drain conditions must not exceed 110mOhm to maintain equivalent power dissipation characteristics and thermal performance.

Gate Threshold Voltage: Vgs(th) must be compatible with the drive circuit, typically within the range of 3.5V to 6.5V at the specified test current.

Package Compatibility: Substitute parts are grouped by mounting type (through-hole) and pin configuration (TO-220-3 or TO-247-3 variants).

Product Status and Compliance: Active status parts are preferred; parts marked "Not For New Designs" are listed as alternatives only. All parts must maintain RoHS3 compliance.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Package	Product Status
STP35N60DM2	STMicroelectronics	600	28	110 @ 14A, 10V	5 @ 250µA	54 @ 10V	TO-220-3	Active
STW35N60DM2	STMicroelectronics	600	28	110 @ 14A, 10V	5 @ 250µA	54 @ 10V	TO-247-3	Active
FCP099N60E	onsemi	600	37	99 @ 18.5A, 10V	3.5 @ 250µA	114 @ 10V	TO-220-3	Not For New Designs
FCP104N60	Fairchild Semiconductor	600	37	104 @ 18.5A, 10V	3.5 @ 250µA	82 @ 10V	TO-220-3	Active
FCP104N60F	onsemi	600	37	104 @ 18.5A, 10V	5 @ 250µA	145 @ 10V	TO-220-3	Not For New Designs
FCP110N65F	onsemi	650	35	110 @ 17.5A, 10V	5 @ 3.5mA	145 @ 10V	TO-220-3	Not For New Designs
FCP125N60E	onsemi	600	29	125 @ 14.5A, 10V	3.5 @ 250µA	95 @ 10V	TO-220-3	Not For New Designs
R6035VNX3C16	Rohm Semiconductor	600	35	114 @ 8A, 15V	6.5 @ 1.1mA	50 @ 10V	TO-220-3	Active

Engineering Selection Recommendations

Parametric Equivalent (Same Electrical Performance)

The STW35N60DM2 is a parametric equivalent of the STP35N60DM2, manufactured by the same supplier (STMicroelectronics) with identical electrical specifications. The only difference is the package format: STW35N60DM2 uses TO-247-3 instead of TO-220-3. This part is Active in product status and maintains full RoHS3 compliance. Selection of STW35N60DM2 is appropriate when TO-247-3 packaging provides superior thermal management or mechanical integration benefits.

Similar Performance Alternatives (Higher Current Rating)

FCP099N60E, FCP104N60, FCP104N60F, and FCP125N60E are similar performance alternatives with 600V voltage rating and current ratings ranging from 29A to 37A. These parts exceed the 28A requirement of the STP35N60DM2. FCP104N60 (Fairchild Semiconductor) is the only Active status part in this group. FCP099N60E, FCP104N60F, and FCP125N60E are marked "Not For New Designs" and should be used only when existing inventory constraints or legacy system requirements necessitate their use.

Higher Voltage Alternative

FCP110N65F provides a 650V voltage rating with 35A continuous drain current, exceeding both voltage and current specifications of the STP35N60DM2. This part is marked "Not For New Designs" and should be selected only when higher voltage margin is required and alternative Active status parts are unavailable.

Rohm Semiconductor Alternative

R6035VNX3C16 (Rohm Semiconductor) is an Active status part with 600V rating and 35A continuous drain current. This part maintains RoHS3 compliance and offers an alternative supplier option. The on-resistance specification is measured at different test conditions (8A, 15V) compared to the STP35N60DM2, requiring circuit-level verification of thermal performance.

Frequently Asked Questions (FAQ)

Q: Can I use STW35N60DM2 as a direct replacement for STP35N60DM2?

A: Yes. STW35N60DM2 is a parametric equivalent with identical electrical specifications. The difference is packaging: STW35N60DM2 uses TO-247-3 instead of TO-220-3. Verify that your PCB layout and thermal management design accommodate the TO-247-3 package dimensions before substitution.

Q: What is the difference between "Parametric Equivalent" and "Similar Performance" substitutes?

A: Parametric equivalents have identical electrical specifications and are manufactured by the same supplier. Similar performance parts meet the voltage and current requirements but may have different on-resistance, gate charge, or other secondary characteristics. Similar performance parts require circuit-level analysis to confirm suitability.

Q: Why are some substitute parts marked "Not For New Designs"?

A: Parts marked "Not For New Designs" are legacy devices that manufacturers no longer recommend for new circuit development. These parts may have limited future availability or may be superseded by improved alternatives. Use these parts only when existing inventory constraints or legacy system maintenance requires them.

Q: Can I substitute a higher-current-rated MOSFET for the STP35N60DM2?

A: Yes, provided the voltage rating is equal to or greater than 600V and the package type is compatible with your PCB layout. Higher current ratings provide design margin but do not degrade performance. Verify that on-resistance and gate charge specifications are acceptable for your drive circuit and thermal design.

Q: Does the R6035VNX3C16 require different gate drive circuitry?

A: The R6035VNX3C16 has a gate threshold voltage of 6.5V compared to 5V for the STP35N60DM2. Verify that your gate drive circuit can reliably reach the higher threshold voltage. The on-resistance specification is also measured at different test conditions (8A, 15V versus 14A, 10V), requiring thermal analysis to confirm equivalent power dissipation in your application.

Q: What is the advantage of TO-247-3 packaging over TO-220-3?

A: TO-247-3 packaging provides improved thermal performance through a larger die-attach area and enhanced heat dissipation path. Selection of STW35N60DM2 (TO-247-3) is appropriate for high-power applications where thermal management is critical. Verify PCB layout compatibility and mounting hardware availability before substitution.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed in this reference are RoHS3 compliant. Verify compliance documentation with your supplier before procurement to confirm current manufacturing status.

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