STP33N60DM6 Equivalent & Substitute Parts

Part Overview

The STP33N60DM6 is an N-Channel 600V 25A MOSFET manufactured by STMicroelectronics in the MDmesh™ M6 series. This through-hole TO-220 package device is designed for high-voltage switching applications requiring 600V drain-to-source voltage capability with 25A continuous drain current at 25°C. The part is Active status and RoHS3 compliant. Equivalent and substitute parts are identified for applications where component availability, inventory levels, or specific electrical performance characteristics necessitate alternative sourcing options while maintaining functional compatibility within the specified electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	25	A (Tc)
Rds On (Max) @ Id, Vgs	128	mOhm @ 12.5A, 10V
Gate Threshold Voltage Vgs(th) (Max)	4.75	V @ 250µA
Gate Charge (Qg) (Max)	35	nC @ 10V
Power Dissipation (Max)	190	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitute parts for the STP33N60DM6 are qualified based on the following electrical and mechanical parameters that determine functional compatibility:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 600V minimum
FET Type: N-Channel MOSFET
Package: TO-220 or TO-220-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C (TJ)
Continuous Drain Current (Id): 24A or greater at 25°C

Allowable Variation Parameters:

Rds On (Max): Substitute parts may have higher on-resistance values provided they remain within acceptable thermal and switching loss margins for the application
Gate Charge (Qg): Variation permitted based on drive circuit capability
Gate Threshold Voltage Vgs(th): Variation permitted within gate drive voltage specifications
Input Capacitance (Ciss): Variation permitted based on drive circuit design

The identified substitute parts FCP130N60 (Fairchild Semiconductor) and R6024VNX3C16 (Rohm Semiconductor) meet all critical matching parameters and are classified as direct functional equivalents for the STP33N60DM6 in 600V N-Channel MOSFET applications.

Parameter Comparison

Parameter	STP33N60DM6 (STMicroelectronics)	FCP130N60 (Fairchild)	R6024VNX3C16 (Rohm)	Unit
Drain to Source Voltage (Vdss)	600	600	600	V
Continuous Drain Current (Id) @ 25°C	25	28	24	A (Tc)
Rds On (Max) @ Id, Vgs	128 @ 12.5A, 10V	130 @ 14A, 10V	153 @ 6A, 15V	mOhm
Gate Threshold Voltage Vgs(th) (Max)	4.75 @ 250µA	3.5 @ 250µA	6.5 @ 700µA	V
Gate Charge (Qg) (Max)	35 @ 10V	70 @ 10V	38 @ 10V	nC
Power Dissipation (Max)	190	278	245	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package Type	TO-220-3	TO-220-3	TO-220-3	Through Hole
FET Type	N-Channel	N-Channel	N-Channel	MOSFET
Vgs (Max)	±25	±20	±30	V
Input Capacitance (Ciss) (Max)	1500 @ 100V	3590 @ 380V	1800 @ 100V	pF
RoHS Status	ROHS3 Compliant	Not specified	ROHS3 Compliant

Engineering Selection Recommendations

STP33N60DM6 (Primary Part): The STP33N60DM6 remains the primary selection for new designs and applications where STMicroelectronics MDmesh™ M6 series performance characteristics are specified. This part is Active status, RoHS3 compliant, and REACH unaffected. Current inventory of 2100 pieces supports immediate availability.

FCP130N60 (Fairchild Semiconductor Substitute): The FCP130N60 is suitable as a substitute where higher continuous drain current (28A vs. 25A) and increased power dissipation capability (278W vs. 190W) are beneficial. This part operates within the same voltage and temperature specifications. The higher gate charge (70nC vs. 35nC) requires verification of gate drive circuit capability. Inventory of 1804 pieces is available. ECCN and HTSUS classifications are provided for export compliance.

R6024VNX3C16 (Rohm Semiconductor Substitute): The R6024VNX3C16 is suitable as a substitute where continuous drain current of 24A and power dissipation of 245W meet application requirements. This part is RoHS3 compliant, REACH unaffected, and available in tube packaging with 1768 pieces in stock. The higher gate threshold voltage (6.5V vs. 4.75V) and higher Rds On at lower current (153mOhm @ 6A, 15V) require circuit-level evaluation. Maximum gate voltage rating of ±30V provides additional margin compared to the primary part.

All three parts share identical 600V Vdss rating, N-Channel MOSFET technology, TO-220-3 package configuration, and -55°C to 150°C operating temperature range, establishing functional equivalence for high-voltage switching applications.

Frequently Asked Questions (FAQ)

Q: Can the FCP130N60 be used as a direct replacement for the STP33N60DM6?

A: The FCP130N60 is functionally equivalent for 600V N-Channel MOSFET applications. Both parts share identical Vdss (600V), FET type (N-Channel), package (TO-220-3), and operating temperature range (-55°C to 150°C). The FCP130N60 provides higher continuous drain current (28A vs. 25A) and power dissipation (278W vs. 190W). However, the gate charge is doubled (70nC vs. 35nC), requiring verification that the gate drive circuit can supply the additional charge without exceeding switching time or thermal constraints.

Q: What are the key differences between the R6024VNX3C16 and the STP33N60DM6?

A: Both parts are 600V N-Channel MOSFETs in TO-220-3 packages with identical operating temperature ranges. The R6024VNX3C16 has a continuous drain current of 24A (vs. 25A) and power dissipation of 245W (vs. 190W). The gate threshold voltage is higher (6.5V @ 700µA vs. 4.75V @ 250µA), and the Rds On specification is measured at different conditions (153mOhm @ 6A, 15V vs. 128mOhm @ 12.5A, 10V). The R6024VNX3C16 supports a higher maximum gate voltage (±30V vs. ±25V).

Q: Are all three parts RoHS3 compliant?

A: The STP33N60DM6 and R6024VNX3C16 are explicitly RoHS3 compliant. The FCP130N60 RoHS status is not specified in the provided data. Compliance verification with the FCP130N60 manufacturer is required for applications with RoHS3 requirements.

Q: What is the significance of the different Rds On measurement conditions across these parts?

A: Rds On (on-resistance) varies with drain current and gate-source voltage. The STP33N60DM6 specifies 128mOhm @ 12.5A, 10V; the FCP130N60 specifies 130mOhm @ 14A, 10V; and the R6024VNX3C16 specifies 153mOhm @ 6A, 15V. These measurements at different operating points reflect each device's performance characteristics. Direct comparison requires normalizing to identical conditions or evaluating thermal performance within the specific application circuit.

Q: Can the R6024VNX3C16 be used in applications designed for the STP33N60DM6 if the gate drive voltage is 15V?

A: The R6024VNX3C16 is specified with Rds On at 15V gate drive voltage, whereas the STP33N60DM6 is specified at 10V. If the application gate drive circuit operates at 15V, the R6024VNX3C16 is compatible. However, if the application is designed for 10V gate drive, the R6024VNX3C16 gate threshold voltage of 6.5V (vs. 4.75V) may result in slower switching or incomplete turn-on at lower gate voltages. Circuit-level evaluation is required.

Q: What packaging differences exist between these parts?

A: All three parts use TO-220-3 through-hole package configuration, ensuring mechanical and thermal interface compatibility. The STP33N60DM6 and R6024VNX3C16 are supplied in tube packaging, while the FCP130N60 is supplied in bulk packaging. Tube packaging provides static protection and organized handling; bulk packaging requires appropriate handling procedures.

Q: Are there any export compliance considerations when substituting these parts?

A: All three parts are classified as ECCN EAR99 and are REACH unaffected. The STP33N60DM6 and R6024VNX3C16 share HTSUS code 8541.29.0095, while the FCP130N60 is classified under HTSUS 8542.39.0001. Export compliance requirements depend on destination country and end-use application. Consult trade compliance resources for specific jurisdictional requirements.

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