STP30N20 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The STP30N20 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 200V drain-to-source voltage with 30A continuous drain current at 25°C. This device is housed in a TO-220-3 through-hole package and is part of the STripFET™ series. The STP30N20 is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the through-hole TO-220 form factor.

Substiute Parts

STP30N20

STMicroelectronicsIn Stock: 1179STP30N20 Datasheet

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IRFB4620PBF

Infineon TechnologiesIn Stock: 9203IRFB4620PBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STP30N20 is determined by the following critical electrical and mechanical parameters:

Voltage Rating: The substitute must maintain a Drain to Source Voltage (Vdss) rating of 200V or greater to ensure safe operation across all specified circuit conditions.

Current Capability: The substitute must support a continuous drain current (Id) rating sufficient for the application. The STP30N20 specifies 30A at 25°C; substitutes with equal or greater current ratings are acceptable.

On-State Resistance (Rds On): The substitute must exhibit on-state resistance values comparable to or lower than the original specification to maintain thermal performance and minimize power dissipation in the circuit.

Gate Charge (Qg): Gate charge values must be within acceptable limits to ensure compatible gate drive requirements and switching performance.

Package Compatibility: The substitute must use the TO-220-3 through-hole package to ensure mechanical and thermal interface compatibility with existing PCB designs.

Compliance and Status: Active product status and RoHS3 compliance are required for new designs and procurement.

Parameter Comparison

Engineering Selection Recommendations

The IRFB4620PBF from Infineon Technologies is a direct substitute for the obsolete STP30N20. Both devices share identical voltage ratings (200V Vdss) and gate charge specifications (38 nC @ 10V), ensuring compatible gate drive circuits and switching characteristics.

The IRFB4620PBF exhibits a continuous drain current rating of 25A, which is 5A lower than the STP30N20's 30A specification. This reduction in current capacity must be evaluated against application requirements. In applications where the full 30A capability is not required, the IRFB4620PBF provides equivalent performance.

The on-state resistance of the IRFB4620PBF (72.5 mOhm @ 15A, 10V) is marginally lower than the STP30N20 (75 mOhm @ 15A, 10V), resulting in improved thermal efficiency and reduced power dissipation in conduction mode.

The IRFB4620PBF offers an extended operating temperature range (-55°C to 175°C) compared to the STP30N20 (-55°C to 150°C), providing additional thermal margin in high-temperature applications.

Both devices are RoHS3 compliant and maintain the TO-220-3 through-hole package format, ensuring direct mechanical and thermal compatibility with existing PCB designs. The IRFB4620PBF is currently in active production status, providing long-term availability and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can the IRFB4620PBF directly replace the STP30N20 in all applications?

A: The IRFB4620PBF is electrically and mechanically compatible with the STP30N20 for applications where the continuous drain current requirement does not exceed 25A. Both devices share identical voltage ratings and gate charge specifications. Applications requiring the full 30A continuous current capability of the STP30N20 must be re-evaluated with the IRFB4620PBF's 25A rating.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are continuous drain current (STP30N20: 30A vs. IRFB4620PBF: 25A), maximum operating temperature (STP30N20: 150°C vs. IRFB4620PBF: 175°C), and product status (STP30N20: Obsolete vs. IRFB4620PBF: Active). On-state resistance values are nearly identical, and both devices maintain the same voltage rating and gate charge characteristics.

Q: Are there any package compatibility concerns?

A: No. Both the STP30N20 and IRFB4620PBF use the TO-220-3 through-hole package format. Pin assignments and thermal interface characteristics are compatible, allowing direct PCB mounting without modification.

Q: How do the thermal characteristics compare?

A: The IRFB4620PBF has a maximum power dissipation rating of 144W compared to the STP30N20's 125W, and supports a higher maximum junction temperature (175°C vs. 150°C). The lower on-state resistance of the IRFB4620PBF also contributes to reduced conduction losses in typical applications.

Q: What compliance certifications apply to both devices?

A: Both the STP30N20 and IRFB4620PBF are RoHS3 compliant and REACH unaffected. Both carry the same ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Q: Is the gate drive circuit compatible between these two devices?

A: Yes. Both devices have identical gate charge specifications (38 nC @ 10V) and similar gate threshold voltage characteristics, ensuring that existing gate drive circuits designed for the STP30N20 will function with the IRFB4620PBF without modification.