STP30N10F7 Equivalent & Substitute Parts

Part Overview

The STP30N10F7 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 100V drain-to-source voltage with 32A continuous drain current at 25°C. This device is part of the STripFET™ series and is housed in a TO-220AB through-hole package. The part is classified as obsolete, making identification of suitable equivalent and substitute components necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the through-hole TO-220 package form factor.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	32	A (Tc)
On-State Resistance (Rds On) @ 16A, 10V	24	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	V
Gate Charge (Qg) @ 10V	19	nC
Power Dissipation (Max)	50	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STP30N10F7 is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a minimum Vdss of 100V to ensure safe operation in the original circuit application.

Current Capability: Substitute parts must support a continuous drain current (Id) at or above 32A at 25°C. Parts with higher current ratings provide design margin and improved thermal performance.

On-State Resistance (Rds On): The maximum on-state resistance at the specified gate voltage (10V) and current conditions must not exceed the original specification to maintain power dissipation characteristics and thermal behavior.

Gate Threshold Voltage (Vgs(th)): Gate drive compatibility requires threshold voltages within the range of the original part to ensure proper switching behavior with existing gate drive circuits.

Package Compatibility: All substitute parts are housed in TO-220 or TO-220-3 through-hole packages, maintaining mechanical and thermal interface compatibility.

Temperature Range: Operating temperature range must encompass the original specification (-55°C to 175°C) to ensure reliability across all operating conditions.

Compliance: RoHS3 compliance and REACH unaffected status are maintained across all substitute options.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Dissipation (W)	Temp Range (°C)	Status
STP30N10F7	STMicroelectronics	100	32	24 @ 16A, 10V	4.5	19	50	-55 to 175	Obsolete
STP45N10F7	STMicroelectronics	100	45	18 @ 22.5A, 10V	4.5	25	60	-55 to 175	Active
AOT2910L	Alpha & Omega Semiconductor Inc.	100	30 (Tc)	24 @ 20A, 10V	2.7	25	50	-55 to 175	Active
AOT414	Alpha & Omega Semiconductor Inc.	100	43 (Tc)	25 @ 20A, 10V	4.0	34	115	-55 to 175	Not For New Designs
DMNH10H028SCT	Diodes Incorporated	100	60	28 @ 20A, 10V	4.0	31.9	2.8 (Ta)	-55 to 175	Active
HUF75639P3-F102	onsemi	100	56	25 @ 56A, 10V	4.0	130	200	-55 to 175	Obsolete
IXTP64N10L2	IXYS	100	64	32 @ 32A, 10V	4.5	100	357	-55 to 150	Active
IXTP75N10P	IXYS	100	75	25 @ 500mA, 10V	5.5	74	360	-55 to 175	Active

Engineering Selection Recommendations

Primary Recommendation: STP45N10F7

The STP45N10F7 is the manufacturer-recommended substitute from STMicroelectronics. This part maintains the same voltage rating (100V) and gate threshold voltage (4.5V) as the original STP30N10F7, ensuring direct compatibility with existing gate drive circuits. The STP45N10F7 provides 45A continuous drain current, exceeding the original 32A specification and offering improved thermal margin. On-state resistance is reduced to 18 mOhm at 22.5A, providing superior power efficiency. The part is classified as Active and carries full RoHS3 compliance and REACH unaffected status. Operating temperature range matches the original specification (-55°C to 175°C).

Secondary Recommendation: DMNH10H028SCT

The DMNH10H028SCT from Diodes Incorporated is an active, automotive-qualified device (AEC-Q101) rated for 100V and 60A continuous drain current. This part provides significant current margin over the original specification. On-state resistance of 28 mOhm at 20A is within acceptable tolerance of the original 24 mOhm specification. Gate threshold voltage of 4.0V is compatible with standard gate drive circuits. The part maintains full RoHS3 compliance and REACH unaffected status with operating temperature range of -55°C to 175°C. Automotive qualification provides additional reliability assurance for critical applications.

Alternative Recommendation: IXTP75N10P

The IXTP75N10P from IXYS is an active device rated for 100V and 75A continuous drain current, providing substantial current margin. On-state resistance of 25 mOhm at 500mA is comparable to the original specification. Gate threshold voltage of 5.5V is within acceptable range for standard gate drive circuits. The part carries full RoHS3 compliance and REACH unaffected status with operating temperature range of -55°C to 175°C. High power dissipation rating (360W) supports demanding thermal applications.

Parts Not Recommended for New Designs:

AOT414 is classified as "Not For New Designs" and should not be selected for new circuit implementations. HUF75639P3-F102 is obsolete and should be avoided for new applications.

Frequently Asked Questions (FAQ)

Q: Can the STP45N10F7 directly replace the STP30N10F7 without circuit modifications?

A: Yes. The STP45N10F7 maintains identical voltage rating (100V), gate threshold voltage (4.5V), and package type (TO-220-3). The higher current rating (45A vs. 32A) and improved on-state resistance (18 mOhm vs. 24 mOhm) provide enhanced performance without requiring circuit changes. Gate drive voltage and logic remain compatible.

Q: What is the significance of the on-state resistance (Rds On) difference between substitute parts?

A: On-state resistance directly affects power dissipation and thermal performance. Lower Rds On values reduce heat generation during conduction. The STP45N10F7 (18 mOhm) dissipates less power than the original STP30N10F7 (24 mOhm), improving efficiency. Higher Rds On values in some alternatives (e.g., DMNH10H028SCT at 28 mOhm) remain acceptable but generate slightly more heat.

Q: Are all substitute parts available in the same TO-220 package?

A: Yes. All listed substitute parts are housed in TO-220 or TO-220-3 through-hole packages, maintaining mechanical compatibility with the original circuit board layout and thermal interface requirements.

Q: What does "Active" product status mean for component selection?

A: Active status indicates the part is currently manufactured and available from the supplier with ongoing production support. Parts with Active status are preferred for new designs and long-term production continuity. Obsolete parts (STP30N10F7, HUF75639P3-F102) have limited availability and should be replaced in new designs.

Q: How does gate charge (Qg) affect circuit performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. Higher gate charge values (e.g., HUF75639P3-F102 at 130 nC) require more gate drive power and may increase switching losses. Lower values (e.g., STP30N10F7 at 19 nC) reduce gate drive requirements. The STP45N10F7 (25 nC) represents a minor increase with negligible impact on most gate drive circuits.

Q: Can substitute parts with higher current ratings be used in applications requiring only 32A?

A: Yes. Higher current-rated parts (e.g., STP45N10F7 at 45A, IXTP75N10P at 75A) operate safely at lower currents. The device will not draw more current than the circuit demands. Higher current ratings provide thermal margin and improved reliability through reduced junction temperature at the same power dissipation level.

Q: What is the importance of RoHS3 compliance in substitute part selection?

A: RoHS3 compliance ensures the part meets environmental and regulatory requirements for hazardous substance restrictions. All listed substitute parts maintain RoHS3 compliance, ensuring compatibility with regulatory requirements and supply chain standards.

Q: How does operating temperature range affect part selection?

A: Operating temperature range defines the safe thermal limits for device operation. The original STP30N10F7 operates from -55°C to 175°C. Most substitute parts maintain this range. IXTP64N10L2 has a reduced upper limit of 150°C, which may be unsuitable for high-temperature applications. Verify application temperature requirements before selection.

Q: What is the difference between Ta (ambient temperature) and Tc (case temperature) ratings?

A: Ta refers to ambient air temperature surrounding the device, while Tc refers to case temperature at the device junction. Tc ratings are typically higher and represent the actual thermal limit. Specifications using Tc provide more accurate thermal performance data for design calculations.

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