STP2NK60Z Equivalent & Substitute Parts

Part Overview

The STP2NK60Z is an N-Channel 600V 1.4A MOSFET manufactured by STMicroelectronics in the SuperMESH™ series, housed in a TO-220-3 package for through-hole mounting applications. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement requirements. Substitute parts must maintain electrical compatibility across critical parameters including drain-source voltage rating, continuous drain current capacity, and thermal characteristics while accommodating the through-hole TO-220 package form factor.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	1.4	A
Rds On (Max) @ Id, Vgs	8	Ohm @ 700mA, 10V
Power Dissipation (Max)	45	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
Vgs (Max)	±30	V
Gate Charge (Qg) (Max) @ Vgs	10	nC @ 10V

Substitute Part Grouping Explanation

Substitution eligibility for the STP2NK60Z is determined by the following critical parameters:

Mandatory Compatibility Criteria:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V minimum
Mounting Type: Through Hole
Package: TO-220 or TO-220-3 form factor
Operating Temperature Range: -55°C to 150°C minimum

Performance Consideration Parameters:

Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 1.4A
Power Dissipation (Max): Equal to or greater than 45W
Rds On (Max): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce drive circuit complexity

The substitute parts FCP4N60, FQP3N60C, and IRFBE20PBF satisfy the mandatory compatibility criteria. FCP4N60 and FQP3N60C maintain the 600V Vdss rating with enhanced current handling and power dissipation. IRFBE20PBF operates at 800V Vdss, providing voltage margin above the original specification while maintaining compatible package and temperature characteristics.

Parameter Comparison

Parameter	STP2NK60Z	FCP4N60	FQP3N60C	IRFBE20PBF	Unit
Manufacturer	STMicroelectronics	Fairchild Semiconductor	Fairchild Semiconductor	Vishay Siliconix	-
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	-
Drain to Source Voltage (Vdss)	600	600	600	800	V
Current - Continuous Drain (Id) @ 25°C	1.4	3.9	3.0	1.8	A
Rds On (Max) @ Id, Vgs	8 @ 700mA, 10V	1.2 @ 2A, 10V	3.4 @ 1.5A, 10V	6.5 @ 1.1A, 10V	Ohm
Power Dissipation (Max)	45	50	75	54	W
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package Type	TO-220-3	TO-220-3	TO-220-3	TO-220AB	-
Vgs (Max)	±30	±30	±30	±20	V
Gate Charge (Qg) (Max) @ Vgs	10 @ 10V	16.6 @ 10V	14 @ 10V	38 @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	170 @ 25V	540 @ 25V	565 @ 25V	530 @ 25V	pF
Product Status	Obsolete	Active	Active	Active	-
RoHS Status	ROHS3 Compliant	Not specified	Not specified	ROHS3 Compliant	-

Engineering Selection Recommendations

FCP4N60 (Fairchild Semiconductor)

The FCP4N60 is an active-status substitute maintaining the 600V Vdss specification with 3.9A continuous drain current and 50W power dissipation. This part provides enhanced current handling capacity relative to the STP2NK60Z while preserving voltage rating compatibility. The TO-220-3 package ensures direct mechanical compatibility. Gate charge of 16.6 nC represents a moderate increase from the original 10 nC specification. This substitute is suitable for applications where increased current capacity is beneficial and gate drive circuitry can accommodate the higher charge requirement.

FQP3N60C (Fairchild Semiconductor)

The FQP3N60C operates at the same 600V Vdss rating with 3.0A continuous drain current and 75W power dissipation, representing the highest thermal capability among available substitutes. The TO-220-3 package provides direct mechanical compatibility. Rds On of 3.4 Ohm at 1.5A, 10V demonstrates improved on-state performance compared to the original 8 Ohm specification. Gate charge of 14 nC remains moderate. This substitute is appropriate for applications prioritizing thermal margin and on-state efficiency within the 600V voltage class.

IRFBE20PBF (Vishay Siliconix)

The IRFBE20PBF is an active-status substitute with elevated 800V Vdss rating, providing voltage margin above the original 600V specification. Continuous drain current of 1.8A and power dissipation of 54W exceed the STP2NK60Z baseline. The TO-220AB package maintains through-hole compatibility with the original TO-220-3 form factor. Gate charge of 38 nC represents a significant increase, requiring gate drive circuit evaluation. Vgs (Max) of ±20V is lower than the original ±30V specification. This substitute is suitable for applications where elevated voltage rating provides system-level benefits and gate drive capability supports the higher charge requirement.

Compliance Considerations

The STP2NK60Z carries ROHS3 compliance and REACH Unaffected status. FCP4N60 compliance status is not specified in available data. FQP3N60C compliance status is not specified in available data. IRFBE20PBF carries ROHS3 compliance and REACH Affected status. Design teams must verify compliance requirements against specific application and regional standards before final part selection.

Frequently Asked Questions (FAQ)

Q: Can FCP4N60 directly replace STP2NK60Z in existing PCB layouts?

A: Yes. Both parts use the TO-220-3 package with identical pin configuration and through-hole mounting. No PCB modification is required for mechanical compatibility. Gate drive circuitry must accommodate the increased gate charge of 16.6 nC versus the original 10 nC.

Q: What is the primary difference between FCP4N60 and FQP3N60C?

A: Both maintain 600V Vdss rating. FCP4N60 provides higher continuous drain current (3.9A versus 3.0A) with lower power dissipation (50W versus 75W). FQP3N60C offers superior thermal capability (75W) and lower on-state resistance (3.4 Ohm versus 1.2 Ohm at different measurement points). Selection depends on whether the application prioritizes current capacity or thermal margin.

Q: Why does IRFBE20PBF have 800V Vdss instead of 600V?

A: IRFBE20PBF is rated for 800V operation, providing voltage margin above the original 600V specification. This higher rating does not prevent substitution in 600V applications; the device operates safely at lower voltages. The elevated rating may provide system-level benefits in applications with voltage transients or design margin requirements.

Q: Is the TO-220AB package used by IRFBE20PBF compatible with TO-220-3 PCB footprints?

A: Yes. TO-220AB and TO-220-3 are mechanically and electrically compatible package variants for through-hole mounting. Both use identical pin spacing and lead configuration. PCB footprints designed for TO-220-3 accept TO-220AB devices without modification.

Q: How does increased gate charge affect circuit design?

A: Gate charge determines the energy required to switch the MOSFET on and off. FCP4N60 (16.6 nC) and FQP3N60C (14 nC) require more gate drive current than STP2NK60Z (10 nC). IRFBE20PBF (38 nC) requires substantially more. Gate drive circuits must supply sufficient current to charge the gate within the required switching time. Existing gate drive designs may require evaluation or modification to accommodate higher charge requirements.

Q: What is the significance of Rds On differences between substitutes?

A: Rds On (on-state resistance) determines power dissipation during conduction. Lower Rds On values reduce heat generation. FCP4N60 (1.2 Ohm) and FQP3N60C (3.4 Ohm) show improved performance versus STP2NK60Z (8 Ohm), reducing thermal load. IRFBE20PBF (6.5 Ohm) also improves upon the original. Lower Rds On enables higher current handling or reduced heatsink requirements in thermally constrained applications.

Q: Are all substitute parts available in equivalent packaging quantities?

A: Inventory levels vary. FCP4N60 has 3020 pieces available. FQP3N60C has 15226 pieces available. IRFBE20PBF has 2002 pieces available. Procurement timelines and volume requirements should be evaluated against current inventory status.

Q: What compliance certifications should be verified before final selection?

A: STP2NK60Z carries ROHS3 compliance. IRFBE20PBF carries ROHS3 compliance. FCP4N60 and FQP3N60C compliance status is not specified in available documentation. Applications subject to ROHS3 requirements should verify substitute part certifications with manufacturers or authorized distributors before procurement.

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