STP26N65DM2 Equivalent & Substitute Parts

Part Overview

The STP26N65DM2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 650V drain-to-source voltage and 20A continuous drain current at 25°C. This device is housed in a TO-220-3 through-hole package and is part of the MDmesh™ DM2 series. The component is Active in product status and RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances and mechanical compatibility requirements. Alternative devices may be necessary due to inventory availability, supply chain considerations, or application-specific performance requirements.

Substiute Parts

STP26N65DM2

STMicroelectronicsIn Stock: 2136STP26N65DM2 Datasheet

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FCP16N60N

Fairchild SemiconductorIn Stock: 5664FCP16N60N Datasheet

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FCP170N60

Fairchild SemiconductorIn Stock: 1496FCP170N60 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the STP26N65DM2 are selected based on the following criteria:

Primary Substitution Parameters:

• FET Type: N-Channel configuration
• Package Type: TO-220-3 through-hole mounting
• Drain to Source Voltage (Vdss): Minimum 600V (acceptable tolerance for high-voltage applications)
• Continuous Drain Current (Id): Minimum 16A (acceptable for applications with reduced current margin)
• Operating Temperature Range: -55°C to 150°C (matching thermal specifications)
• Technology: MOSFET (Metal Oxide Semiconductor)

Substitution Logic: The identified substitute parts (FCP16N60N and FCP170N60) maintain N-Channel MOSFET topology and TO-220-3 packaging. While these devices operate at 600V (50V lower than the main part), they remain suitable for applications where the 650V rating provides design margin. The FCP170N60 offers superior current handling (22A) and lower on-resistance (170mOhm), making it functionally equivalent or superior for most applications. The FCP16N60N provides a conservative alternative with reduced current capacity (16A) and slightly higher on-resistance (199mOhm).

Parameter Comparison

Engineering Selection Recommendations

STP26N65DM2 (Primary Component): The STP26N65DM2 remains the preferred choice for applications requiring the full 650V rating and optimized gate charge characteristics (35.5 nC). This device is Active in product status and RoHS3 compliant. The lower gate charge reduces switching losses in high-frequency applications.

FCP170N60 (Preferred Substitute): The FCP170N60 is the primary substitute option. It provides superior continuous drain current (22A versus 20A) and lower on-resistance (170mOhm versus 190mOhm), resulting in reduced power dissipation and improved thermal performance. The higher power dissipation rating (227W) accommodates demanding applications. This device is Active in product status. The 50V reduction in Vdss (600V versus 650V) is acceptable for applications with adequate design margin above the maximum operating voltage.

FCP16N60N (Conservative Substitute): The FCP16N60N serves as a conservative alternative where reduced current capacity (16A) is acceptable. This device exhibits higher on-resistance (199mOhm) and lower power dissipation capability (134.4W), making it suitable for lower-power applications. This device is Active in product status.

All substitute parts maintain identical operating temperature ranges and through-hole TO-220-3 packaging, ensuring mechanical and thermal compatibility.

Frequently Asked Questions (FAQ)

Q: Can the FCP170N60 directly replace the STP26N65DM2 in all applications?

A: The FCP170N60 is mechanically and electrically compatible for most applications. The primary consideration is the 50V reduction in Vdss (600V versus 650V). Applications operating near the maximum voltage rating of the STP26N65DM2 require verification that the 600V rating of the FCP170N60 provides adequate margin above the maximum circuit voltage.

Q: What is the significance of the gate charge difference between these devices?

A: Gate charge (Qg) directly affects switching speed and driver power requirements. The STP26N65DM2 has lower gate charge (35.5 nC) compared to FCP16N60N (52.3 nC) and FCP170N60 (55 nC). In high-frequency switching applications, the lower gate charge of the main part reduces switching losses and simplifies gate driver design.

Q: Are all three devices available in the same package?

A: Yes. All three devices are housed in TO-220-3 through-hole packages, ensuring identical mechanical compatibility and PCB layout requirements.

Q: How do the on-resistance specifications affect device selection?

A: On-resistance (Rds On) determines conduction losses and thermal performance. The FCP170N60 exhibits the lowest on-resistance (170mOhm), resulting in lower power dissipation. The STP26N65DM2 (190mOhm) and FCP16N60N (199mOhm) have progressively higher on-resistance values. Applications with high continuous current or stringent thermal requirements benefit from lower on-resistance devices.

Q: What compliance certifications apply to these devices?

A: The STP26N65DM2 is RoHS3 compliant and REACH unaffected. All devices carry EAR99 export classification. Compliance documentation should be verified with the respective manufacturer for specific application requirements.

Q: Can the FCP16N60N be used where the STP26N65DM2 is specified?

A: The FCP16N60N is mechanically compatible but has reduced electrical performance (16A versus 20A continuous current, 134.4W versus 170W power dissipation). This device is suitable only for applications where the reduced current and power ratings do not exceed circuit requirements.