STP26N60M2 Equivalent & Substitute Parts

Part Overview

The STP26N60M2 is an N-Channel 600V 20A MOSFET manufactured by STMicroelectronics in the MDmesh™ M2 series. This device is packaged in TO-220-3 through-hole configuration and is rated for 169W power dissipation at case temperature. The part is currently Active in product status and ROHS3 compliant.

Substitute parts are necessary when the primary part is unavailable, when design requirements demand higher current ratings or power dissipation capabilities, or when alternative manufacturers' components are preferred for supply chain diversification. The substitute parts listed maintain electrical compatibility within the specified voltage and current operating ranges while offering equivalent or enhanced performance characteristics.

Substiute Parts

STP26N60M2
STMicroelectronicsIn Stock: 45146STP26N60M2 Datasheet
STP26N60M2
Current Part
AOT27S60L
Alpha & Omega Semiconductor Inc.In Stock: 2317AOT27S60L Datasheet
AOT27S60L
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IPP60R170CFD7XKSA1
Infineon TechnologiesIn Stock: 1532IPP60R170CFD7XKSA1 Datasheet
IPP60R170CFD7XKSA1
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R6022YNX3C16
Rohm SemiconductorIn Stock: 1931R6022YNX3C16 Datasheet
R6022YNX3C16
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TK17E65W,S1X
Toshiba Semiconductor and StorageIn Stock: 762TK17E65W,S1X Datasheet
TK17E65W,S1X
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20 A (Tc)
Drive Voltage (Max Rds On) 10 V
Power Dissipation (Max) 169 W (Tc)
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for the STP26N60M2 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

  • FET Type: N-Channel (all substitutes must be N-Channel)
  • Package / Case: TO-220-3 (mechanical and thermal interface compatibility)
  • Drain to Source Voltage (Vdss): Minimum 600V (substitutes rated at 600V or higher are acceptable)
  • Current - Continuous Drain (Id): Minimum 20A (substitutes rated at 20A or higher are acceptable)
  • Mounting Type: Through Hole (all substitutes must be through-hole mounted)
  • RoHS Status: ROHS3 Compliant (environmental compliance requirement)

Substitution Logic: All four substitute parts meet or exceed the mandatory voltage and current specifications. Substitutes with higher current ratings (27A, 22A, 17.3A) or higher voltage ratings (650V) provide design flexibility for applications requiring enhanced performance margins. Parts with higher power dissipation ratings offer improved thermal performance in demanding applications. Drive voltage compatibility at 10V ensures gate drive circuit compatibility across all substitutes.

Parameter Comparison

Parameter STP26N60M2 (Main) AOT27S60L IPP60R170CFD7XKSA1 R6022YNX3C16 TK17E65W,S1X
Manufacturer STMicroelectronics Alpha & Omega Semiconductor Inc. Infineon Technologies Rohm Semiconductor Toshiba Semiconductor and Storage
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 600V 600V 650V 600V 650V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 27A (Tc) 14A (Tc) 22A (Tc) 17.3A (Ta)
Drive Voltage (Max Rds On) 10V 10V 10V 10V, 12V 10V
Power Dissipation (Max) 169W (Tc) 357W (Tc) 75W (Tc) 205W (Tc) 165W (Tc)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Product Status Active Not For New Designs Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

AOT27S60L (Alpha & Omega Semiconductor Inc.): This substitute provides 27A continuous drain current and 357W power dissipation, exceeding the STP26N60M2 specifications. However, the product status is listed as "Not For New Designs," which restricts its use to legacy system maintenance or replacement applications only. For new product development, this part should not be selected.

IPP60R170CFD7XKSA1 (Infineon Technologies): This substitute is rated at 650V Vdss and 14A continuous drain current. The 14A rating falls below the STP26N60M2 specification of 20A, making this part suitable only for applications with reduced current requirements. The Active product status and CoolMOS™ CFD7 series technology provide long-term availability. This part is not recommended as a direct substitute for the STP26N60M2 due to insufficient current rating.

R6022YNX3C16 (Rohm Semiconductor): This substitute provides 22A continuous drain current and 205W power dissipation at 600V Vdss, meeting or exceeding all critical STP26N60M2 specifications. The Active product status ensures continued availability. This part is suitable for direct substitution in applications requiring equivalent or slightly enhanced performance.

TK17E65W,S1X (Toshiba Semiconductor and Storage): This substitute provides 17.3A continuous drain current at 650V Vdss. The current rating of 17.3A is below the STP26N60M2 specification of 20A, making this part suitable only for applications with reduced current requirements. The Active product status and DTMOSIV series technology provide long-term availability. This part is not recommended as a direct substitute for the STP26N60M2 due to insufficient current rating.

Frequently Asked Questions (FAQ)

Q: Can the IPP60R170CFD7XKSA1 be used as a direct replacement for the STP26N60M2?

A: No. The IPP60R170CFD7XKSA1 is rated for 14A continuous drain current, which is below the STP26N60M2 specification of 20A. This part is suitable only for applications with reduced current requirements or where the actual operating current does not exceed 14A.

Q: Can the TK17E65W,S1X be used as a direct replacement for the STP26N60M2?

A: No. The TK17E65W,S1X is rated for 17.3A continuous drain current, which is below the STP26N60M2 specification of 20A. This part is suitable only for applications with reduced current requirements or where the actual operating current does not exceed 17.3A.

Q: Is the AOT27S60L suitable for new product designs?

A: No. The AOT27S60L carries a product status of "Not For New Designs." This part is restricted to legacy system maintenance and replacement applications only. For new product development, select from parts with Active product status: R6022YNX3C16, IPP60R170CFD7XKSA1, or TK17E65W,S1X.

Q: What is the primary advantage of the R6022YNX3C16 as a substitute?

A: The R6022YNX3C16 provides 22A continuous drain current and 205W power dissipation, both exceeding the STP26N60M2 specifications of 20A and 169W respectively. It maintains 600V Vdss compatibility and carries Active product status, ensuring long-term availability and suitability for new designs.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes. All substitute parts listed are packaged in TO-220-3 through-hole configuration, ensuring mechanical and thermal interface compatibility with the STP26N60M2. The TO-220AB variant used by R6022YNX3C16 is functionally equivalent to the standard TO-220-3 package.

Q: What is the significance of the 650V Vdss rating on some substitutes?

A: Substitutes rated at 650V Vdss (IPP60R170CFD7XKSA1 and TK17E65W,S1X) provide higher voltage margin compared to the STP26N60M2 at 600V. These parts are suitable for applications where additional voltage headroom is beneficial, though they are not required for circuits designed for 600V operation.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed carry ROHS3 compliance certification, matching the environmental compliance status of the STP26N60M2. All parts also maintain MSL 1 (Unlimited) moisture sensitivity level.

Q: Which substitute part is the best choice for direct replacement?

A: The R6022YNX3C16 is the most suitable direct replacement, providing 22A continuous drain current and 205W power dissipation at 600V Vdss, with Active product status ensuring long-term availability. This part meets or exceeds all critical STP26N60M2 specifications.

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