STP26N60DM6 Equivalent & Substitute Parts

Part Overview

The STP26N60DM6 is an N-Channel 600V 18A MOSFET manufactured by STMicroelectronics in the MDmesh™ DM6 series. This through-hole TO-220 package device is rated for 130W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently Active in product status and RoHS3 compliant.

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing, inventory constraints, or when specific performance characteristics align with application parameters. Substitute MOSFETs must maintain compatibility across critical electrical specifications including drain-source voltage rating, continuous drain current capability, on-state resistance, and gate charge characteristics.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	18	A (Tc)
On-State Resistance (Rds On Max) @ 9A, 10V	195	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4.75	V
Gate Charge (Qg Max) @ 10V	24	nC
Power Dissipation (Max)	130	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution logic for the STP26N60DM6 is based on the following critical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): 600V minimum (600V or 650V acceptable)
Continuous Drain Current (Id): 16A or higher at 25°C
On-State Resistance (Rds On): 190–199 mOhm range at specified gate voltage
Gate Charge (Qg): 24–52.3 nC at 10V
Package: TO-220-3 through-hole configuration
Operating Temperature: -55°C to 150°C minimum
Technology: N-Channel MOSFET (Metal Oxide)

Substitution Grouping:

Group 1 – Direct Voltage & Current Match (600V, 16–18A): Devices with 600V Vdss rating and drain current between 16A and 18A represent the closest functional equivalents. These include FCP16N60N (Fairchild, 16A), TK16E60W,S1VX (Toshiba, 15.8A), and TSM60NB190CZ C0G (Taiwan Semiconductor, 18A).

Group 2 – Enhanced Current Capability (600V, 20–23.8A): Devices with 600V Vdss but higher drain current ratings (20A or above) provide increased current headroom. These include TK20E60W,S1VX (Toshiba, 20A) and IPP60R160P6XKSA1 (Infineon, 23.8A).

Group 3 – Elevated Voltage Rating (650V, 13–16A): Devices with 650V Vdss rating provide higher voltage margin while maintaining comparable current ratings. These include IPP60R199CPXKSA1 (Infineon, 16A) and IPP65R190C7FKSA1 (Infineon, 13A).

All substitute parts maintain TO-220-3 package compatibility, N-Channel MOSFET technology, and operating temperature ranges spanning -55°C to 150°C.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg Max (nC)	Power Dissipation (W)	Product Status	Package
STP26N60DM6	STMicroelectronics	600	18	195 @ 9A, 10V	24 @ 10V	130	Active	TO-220-3
FCP16N60N	Fairchild Semiconductor	600	16	199 @ 8A, 10V	52.3 @ 10V	134.4	Active	TO-220-3
IPP60R160P6XKSA1	Infineon Technologies	600	23.8	160 @ 9A, 10V	44 @ 10V	176	Active	TO-220-3
IPP60R199CPXKSA1	Infineon Technologies	650	16	199 @ 9.9A, 10V	43 @ 10V	139	Not For New Designs	TO-220-3
IPP65R190C7FKSA1	Infineon Technologies	650	13	190 @ 5.7A, 10V	23 @ 10V	72	Active	TO-220-3
TK16E60W,S1VX	Toshiba Semiconductor and Storage	600	15.8	190 @ 7.9A, 10V	38 @ 10V	130	Active	TO-220-3
TK20E60W,S1VX	Toshiba Semiconductor and Storage	600	20	155 @ 10A, 10V	48 @ 10V	165	Active	TO-220-3
TSM60NB190CZ C0G	Taiwan Semiconductor Corporation	600	18	190 @ 6A, 10V	31 @ 10V	33.8	Obsolete	TO-220-3

Engineering Selection Recommendations

Active Product Status Preference: For new designs and ongoing production, prioritize substitute parts with Active product status. FCP16N60N, IPP60R160P6XKSA1, IPP65R190C7FKSA1, TK16E60W,S1VX, and TK20E60W,S1VX all maintain Active status and are suitable for long-term supply chain planning.

Avoid Obsolete and Not For New Designs Status: TSM60NB190CZ C0G carries Obsolete status and should not be selected for new applications. IPP60R199CPXKSA1 is marked Not For New Designs and is restricted to legacy system support only.

Compliance and Certification Alignment: All recommended substitute parts maintain RoHS3 compliance and REACH Unaffected status, matching the STP26N60DM6 regulatory profile. Moisture Sensitivity Level (MSL) is uniformly rated at 1 (Unlimited) across all parts, eliminating moisture handling constraints as a differentiation factor.

Current Rating Considerations: Applications requiring the full 18A continuous drain current of the STP26N60DM6 should select TK20E60W,S1VX (20A) or IPP60R160P6XKSA1 (23.8A) to maintain current margin. FCP16N60N and TK16E60W,S1VX provide 16A and 15.8A respectively, suitable for applications with lower current demands.

On-State Resistance Trade-offs: IPP60R160P6XKSA1 offers the lowest Rds On at 160 mOhm, reducing conduction losses. TK20E60W,S1VX provides 155 mOhm at 10A, further optimizing efficiency. Conversely, IPP65R190C7FKSA1 maintains 190 mOhm with reduced power dissipation (72W), suitable for lower-power applications.

Voltage Margin Applications: For systems requiring enhanced voltage headroom, IPP60R199CPXKSA1 and IPP65R190C7FKSA1 provide 650V Vdss ratings, offering 50V additional margin over the 600V STP26N60DM6 specification.

Frequently Asked Questions (FAQ)

Q: Can FCP16N60N directly replace STP26N60DM6 in all applications?

A: FCP16N60N is functionally compatible for applications requiring 16A or less continuous drain current. Both devices share 600V Vdss rating, TO-220-3 package, and comparable on-state resistance (199 mOhm vs. 195 mOhm). However, FCP16N60N has higher gate charge (52.3 nC vs. 24 nC), which may increase switching losses in high-frequency applications. Verify application current requirements before substitution.

Q: What is the difference between 600V and 650V rated devices?

A: 650V-rated devices (IPP60R199CPXKSA1, IPP65R190C7FKSA1) provide 50V additional voltage margin above the 600V STP26N60DM6 specification. This higher rating is beneficial in systems with voltage transients or overshoot conditions. However, 650V devices typically exhibit higher on-state resistance and gate charge. Select 650V devices only when system voltage stress analysis justifies the trade-off.

Q: Is TSM60NB190CZ C0G suitable for new designs?

A: No. TSM60NB190CZ C0G carries Obsolete product status and should not be selected for new applications. While electrical parameters are comparable to STP26N60DM6, obsolete parts present long-term supply chain risk and lack manufacturer support. Use Active-status alternatives such as TK16E60W,S1VX or FCP16N60N.

Q: Why does IPP60R199CPXKSA1 show "Not For New Designs" status?

A: IPP60R199CPXKSA1 is restricted to legacy system support and maintenance applications only. Infineon has transitioned this part to end-of-life status. For new designs, select Active alternatives such as IPP60R160P6XKSA1 or IPP65R190C7FKSA1 from the Infineon CoolMOS™ portfolio.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. STP26N60DM6 has 24 nC gate charge, while FCP16N60N has 52.3 nC. Higher gate charge increases switching losses and requires higher gate drive current. In high-frequency switching applications (>100 kHz), lower gate charge devices reduce power dissipation. Verify gate driver capability before selecting high gate charge alternatives.

Q: Are all substitute parts available in the same packaging?

A: Yes. All substitute parts listed are packaged in TO-220-3 through-hole configuration, maintaining mechanical and thermal interface compatibility with STP26N60DM6. No PCB layout modifications are required for direct substitution.

Q: Which substitute offers the best efficiency for high-current applications?

A: TK20E60W,S1VX and IPP60R160P6XKSA1 offer the lowest on-state resistance values (155 mOhm and 160 mOhm respectively), minimizing conduction losses. TK20E60W,S1VX is rated for 20A continuous current, making it suitable for applications approaching or exceeding the 18A STP26N60DM6 rating while maintaining superior efficiency.

Q: What is the impact of power dissipation ratings on thermal design?

A: Power dissipation ratings indicate maximum allowable heat generation at the junction. STP26N60DM6 is rated 130W, while IPP60R160P6XKSA1 is rated 176W and IPP65R190C7FKSA1 is rated 72W. Higher power dissipation requires enhanced heatsinking. Lower-power devices reduce thermal management requirements but may be unsuitable for high-current applications. Match power dissipation rating to application duty cycle and thermal environment.

Q: Can I use IPP65R190C7FKSA1 as a direct replacement for 18A applications?

A: No. IPP65R190C7FKSA1 is rated for only 13A continuous drain current, insufficient for applications requiring the full 18A capability of STP26N60DM6. This device is suitable only for applications with 13A or lower current demands. For 18A applications, select TK20E60W,S1VX (20A) or IPP60R160P6XKSA1 (23.8A).

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