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STP24N65M2 Equivalent & Substitute Parts
Part Overview
The STP24N65M2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 650V drain-to-source voltage with 16A continuous drain current at 25°C. This device is housed in a TO-220-3 through-hole package and is part of the MDmesh™ M2 series. The component is classified as obsolete, necessitating identification of equivalent substitute parts for ongoing design requirements and procurement needs. Substitute parts must maintain functional compatibility across critical electrical parameters including voltage rating, current capacity, and thermal characteristics.
Substiute Parts
Key Parameters
| Parameter | STP24N65M2 |
|---|---|
| Manufacturer | STMicroelectronics |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 8A, 10V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitute parts for the STP24N65M2 are identified based on the following critical parameters that determine functional compatibility:
Voltage Rating Compatibility: Substitute parts must operate at or above the 650V drain-to-source voltage requirement. Parts rated at higher voltages (800V) are acceptable for applications requiring the 650V specification.
Current Capacity: Substitute parts must support the 16A continuous drain current requirement at 25°C. Parts with equal or greater current ratings satisfy this criterion.
Package Compatibility: All substitute parts must use the TO-220-3 through-hole package to ensure mechanical and thermal interface compatibility with existing PCB designs.
Temperature Range: Substitute parts must support the operating temperature range of -55°C to 150°C (TJ).
Technology and FET Type: All substitute parts must be N-Channel MOSFETs using metal oxide technology.
Compliance Requirements: Substitute parts must maintain ROHS3 compliance and REACH unaffected status to meet regulatory requirements.
The identified substitute parts are FCP220N80 (onsemi) and FCP260N60E (Fairchild Semiconductor), both of which satisfy these critical parameters.
Parameter Comparison
| Parameter | STP24N65M2 (STMicroelectronics) | FCP220N80 (onsemi) | FCP260N60E (Fairchild Semiconductor) |
|---|---|---|---|
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 800 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) | 23A (Tc) | 15A (Tc) |
| Drive Voltage (Max Rds On) | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 8A, 10V | 220mOhm @ 11.5A, 10V | 260mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4.5V @ 2.3mA | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | 105 nC @ 10 V | 62 nC @ 10 V |
| Vgs (Max) | ±25V | ±20V | ±20V |
| Power Dissipation (Max) | 150W (Tc) | 278W (Tc) | 156W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Not specified in input |
Engineering Selection Recommendations
FCP220N80 (onsemi): This substitute part exceeds the STP24N65M2 specifications in voltage rating (800V vs. 650V) and current capacity (23A vs. 16A). The higher power dissipation rating (278W vs. 150W) provides additional thermal margin. This part is classified as obsolete, matching the status of the original component. ROHS3 compliance is confirmed. The higher gate charge (105 nC vs. 29 nC) may require circuit design consideration for switching speed applications.
FCP260N60E (Fairchild Semiconductor): This substitute part operates at a lower voltage rating (600V vs. 650V) and slightly lower current capacity (15A vs. 16A). The voltage rating is below the original specification and should be evaluated for applications where the full 650V margin is required. This part is classified as active, providing ongoing availability and support. Power dissipation (156W) is comparable to the original part. The lower gate charge (62 nC vs. 29 nC) may affect switching characteristics.
Selection between substitute parts depends on application voltage headroom requirements and switching speed constraints. FCP220N80 provides superior electrical margins but with increased gate charge. FCP260N60E offers comparable thermal performance but with reduced voltage rating.
Frequently Asked Questions (FAQ)
Q: Can FCP220N80 be used as a direct replacement for STP24N65M2?
A: FCP220N80 is electrically compatible for applications requiring 650V operation. The higher voltage rating (800V) and current capacity (23A) provide design margin. However, the increased gate charge (105 nC vs. 29 nC) may require circuit modifications for switching speed optimization. The TO-220-3 package ensures mechanical compatibility.
Q: What are the limitations of using FCP260N60E as a substitute?
A: FCP260N60E operates at 600V, which is below the original 650V specification. This part is suitable only for applications where the operating voltage does not exceed 600V. The current capacity (15A) is marginally lower than the original 16A rating. The active product status ensures continued availability.
Q: Are all substitute parts available in the same package?
A: Yes, both FCP220N80 and FCP260N60E use the TO-220-3 through-hole package, ensuring identical PCB footprint and thermal interface compatibility with the original STP24N65M2.
Q: Do the substitute parts meet the same compliance requirements?
A: FCP220N80 is confirmed ROHS3 compliant and REACH unaffected. FCP260N60E compliance status is not specified in the provided data. Compliance verification is required before final part selection.
Q: How do gate charge differences affect circuit design?
A: The STP24N65M2 has a gate charge of 29 nC at 10V. FCP220N80 (105 nC) and FCP260N60E (62 nC) have higher gate charges, which may increase switching time and power dissipation in the gate drive circuit. Gate driver circuits must be evaluated for compatibility with these higher charge requirements.
Q: What is the impact of Rds On variations between parts?
A: The STP24N65M2 has Rds On of 230mOhm at 8A, 10V. FCP220N80 (220mOhm at 11.5A, 10V) offers slightly lower on-resistance. FCP260N60E (260mOhm at 7.5A, 10V) has higher on-resistance. These variations affect conduction losses and thermal performance in the application circuit.
Q: Can these parts be used interchangeably in existing designs?
A: Interchangeability depends on application-specific voltage and current requirements. FCP220N80 is suitable for designs requiring 650V+ operation. FCP260N60E is limited to 600V maximum. Both parts require evaluation of gate drive circuit compatibility due to gate charge differences.
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