STP24N60DM2 Equivalent & Substitute Parts

Part Overview

The STP24N60DM2 is an N-channel MOSFET manufactured by STMicroelectronics, part of the FDmesh™ II Plus series. This device operates at 600 V drain-to-source voltage with a continuous drain current of 18 A at 25°C and maximum power dissipation of 150 W. The component is housed in a TO-220-3 through-hole package and is currently in active product status with RoHS3 compliance.

Substitute parts are necessary when the original STP24N60DM2 becomes unavailable, when alternative packaging is required for specific board layouts, or when design requirements necessitate different thermal or electrical performance characteristics within compatible parameter ranges.

Substiute Parts

STP24N60DM2
STMicroelectronicsIn Stock: 3597STP24N60DM2 Datasheet
STP24N60DM2
Current Part
STW24N60DM2
STMicroelectronicsIn Stock: 1534STW24N60DM2 Datasheet
STW24N60DM2
Parametric Equivalent
AOT20S60L
Alpha & Omega Semiconductor Inc.In Stock: 2014AOT20S60L Datasheet
AOT20S60L
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AOT27S60L
Alpha & Omega Semiconductor Inc.In Stock: 2317AOT27S60L Datasheet
AOT27S60L
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FCP150N65F
onsemiIn Stock: 3956FCP150N65F Datasheet
FCP150N65F
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FCP165N60E
onsemiIn Stock: 1582FCP165N60E Datasheet
FCP165N60E
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FCP170N60
Fairchild SemiconductorIn Stock: 1496FCP170N60 Datasheet
FCP170N60
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FCP190N60E
onsemiIn Stock: 2853FCP190N60E Datasheet
FCP190N60E
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FCP190N65F
onsemiIn Stock: 15950FCP190N65F Datasheet
FCP190N65F
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FCP20N60
onsemiIn Stock: 1541FCP20N60 Datasheet
FCP20N60
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FCP22N60N
onsemiIn Stock: 5921FCP22N60N Datasheet
FCP22N60N
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IXFP18N65X2
IXYSIn Stock: 2278IXFP18N65X2 Datasheet
IXFP18N65X2
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IXTP20N65X2
IXYSIn Stock: 1085IXTP20N65X2 Datasheet
IXTP20N65X2
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IXTP24N65X2
IXYSIn Stock: 4237IXTP24N65X2 Datasheet
IXTP24N65X2
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SPP20N60C3XKSA1
Infineon TechnologiesIn Stock: 7203SPP20N60C3XKSA1 Datasheet
SPP20N60C3XKSA1
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SPP20N60S5XKSA1
Infineon TechnologiesIn Stock: 4316SPP20N60S5XKSA1 Datasheet
SPP20N60S5XKSA1
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TPH3206PD
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 18 A
On-State Resistance (Rds On) @ 9A, 10V 200 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 5 V
Gate Charge (Qg) @ 10V 29 nC
Input Capacitance (Ciss) @ 100V 1055 pF
Power Dissipation (Max) 150 W
Operating Temperature Range -55 to 150 °C
Package Type TO-220-3
FET Type N-Channel

Substitute Part Grouping Explanation

Substitution of the STP24N60DM2 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 600 V
  • Continuous Drain Current (Id): Must equal or exceed 18 A at 25°C
  • On-State Resistance (Rds On): Must not exceed 200 mOhm at specified gate voltage
  • Gate Threshold Voltage (Vgs(th)): Must fall within ±25 V maximum gate voltage specification
  • Operating Temperature Range: Must support -55°C to 150°C
  • FET Type: Must be N-Channel MOSFET technology
  • Mounting Type: Must be through-hole configuration

Secondary Compatibility Factors:

  • Package type (TO-220-3 preferred for direct pin compatibility; TO-247-3 acceptable with board layout modification)
  • RoHS3 compliance status
  • Gate charge and input capacitance characteristics for switching performance

Substitute parts are grouped into two categories: parametric equivalents (identical electrical specifications with different packaging) and similar alternatives (comparable performance within allowed parameter ranges).

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Vgs(th) (V) Qg (nC) Package Status
STP24N60DM2 STMicroelectronics 600 18 200 @ 9A, 10V 5 @ 250µA 29 @ 10V TO-220-3 Active
STW24N60DM2 STMicroelectronics 600 18 200 @ 9A, 10V 5 @ 250µA 29 @ 10V TO-247-3 Active
AOT20S60L Alpha & Omega Semiconductor 600 20 199 @ 10A, 10V 4.1 @ 250µA 19.8 @ 10V TO-220-3 Not For New Designs
AOT27S60L Alpha & Omega Semiconductor 600 27 160 @ 13.5A, 10V 4 @ 250µA 26 @ 10V TO-220-3 Not For New Designs
FCP150N65F onsemi 650 24 150 @ 12A, 10V 5 @ 2.4mA 93 @ 10V TO-220-3 Not For New Designs
FCP165N60E onsemi 600 23 165 @ 11.5A, 10V 3.5 @ 250µA 75 @ 10V TO-220-3 Not For New Designs
FCP170N60 Fairchild Semiconductor 600 22 170 @ 11A, 10V 3.5 @ 250µA 55 @ 10V TO-220-3 Active
FCP190N60E onsemi 600 20.6 190 @ 10A, 10V 3.5 @ 250µA 82 @ 10V TO-220-3 Not For New Designs
FCP190N65F onsemi 650 20.6 190 @ 10A, 10V 5 @ 2mA 78 @ 10V TO-220-3 Not For New Designs
FCP20N60 onsemi 600 20 190 @ 10A, 10V 5 @ 250µA 98 @ 10V TO-220-3 Not For New Designs
FCP22N60N onsemi 600 22 165 @ 11A, 10V 4 @ 250µA 45 @ 10V TO-220-3 Obsolete

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

The STW24N60DM2 is a parametric equivalent to the STP24N60DM2, offering identical electrical specifications within the FDmesh™ II Plus series. The primary difference is packaging: STW24N60DM2 uses TO-247-3 instead of TO-220-3. This substitute is suitable when board layout accommodates the larger TO-247-3 footprint and when improved thermal performance from the larger package is beneficial. Both parts maintain Active product status and RoHS3 compliance.

Similar Alternatives (Performance-Compatible Substitutes):

The following parts meet or exceed the electrical requirements of the STP24N60DM2 while maintaining 600 V or higher Vdss and continuous drain current at or above 18 A:

  • FCP170N60 (Fairchild Semiconductor): Active product status with 600 V, 22 A continuous current, and 170 mOhm Rds On. Suitable for new designs requiring higher current capability.

  • FCP165N60E and FCP190N60E (onsemi): Both rated at 600 V with drain currents of 23 A and 20.6 A respectively. These parts are marked "Not For New Designs" and should be used only for legacy system maintenance or when existing inventory is available.

  • AOT20S60L and AOT27S60L (Alpha & Omega Semiconductor): Both rated at 600 V in TO-220-3 packages with drain currents of 20 A and 27 A respectively. Both carry "Not For New Designs" status and are suitable only for replacement applications.

  • FCP150N65F and FCP190N65F (onsemi): These parts operate at 650 V, exceeding the 600 V requirement. Both are marked "Not For New Designs." The higher voltage rating provides additional design margin but increases gate charge and input capacitance.

Selection Guidance Based on Product Status:

For new designs, prioritize FCP170N60 (Active status) or STW24N60DM2 (Active status, parametric equivalent). For legacy system support or replacement applications, any substitute meeting the minimum electrical parameters is acceptable. All listed substitutes maintain RoHS3 compliance and operate within the -55°C to 150°C temperature range.

Frequently Asked Questions (FAQ)

Q: Can STW24N60DM2 replace STP24N60DM2 directly on the PCB?

A: STW24N60DM2 is electrically identical but uses TO-247-3 packaging instead of TO-220-3. Direct PCB replacement requires board layout modification to accommodate the larger package footprint. Pin configuration differs between packages.

Q: What is the minimum drain current rating required for a substitute?

A: The substitute must support a continuous drain current of 18 A or higher at 25°C. This ensures the device can handle the design's maximum current demand without exceeding thermal limits.

Q: Are parts marked "Not For New Designs" suitable for replacement applications?

A: Yes. Parts with "Not For New Designs" status are suitable for replacing failed components in existing systems. These parts remain available in inventory and meet all electrical and compliance requirements. However, for new product development, select parts with Active status.

Q: Why do some substitutes have higher gate charge (Qg) values?

A: Gate charge affects switching speed and driver circuit requirements. Higher Qg values (such as FCP150N65F at 93 nC) require more driver current and may increase switching losses. The STP24N60DM2 has 29 nC, which is relatively low. Substitutes with significantly higher Qg may require driver circuit evaluation.

Q: Can I use a 650 V rated device in place of a 600 V device?

A: Yes. A 650 V rated device (such as FCP150N65F or FCP190N65F) exceeds the 600 V requirement and provides additional voltage margin. However, higher voltage ratings typically increase input capacitance and gate charge, which may affect switching performance and driver requirements.

Q: What is the significance of Rds On (on-state resistance)?

A: Rds On determines conduction losses and heat generation. The STP24N60DM2 has 200 mOhm at 9 A and 10 V gate voltage. Substitutes with lower Rds On (such as FCP150N65F at 150 mOhm) generate less heat; those with higher Rds On generate more heat. Selection depends on thermal design requirements.

Q: Are all listed substitutes RoHS3 compliant?

A: All listed substitutes are RoHS3 compliant. Compliance status is provided in the detailed specifications for each part.

Q: What is the difference between TO-220-3 and TO-247-3 packages?

A: TO-220-3 and TO-247-3 are both through-hole packages with three leads (Gate, Drain, Source). TO-247-3 is physically larger, offering improved thermal performance and higher current handling capability. Pin spacing and footprint differ, requiring board layout modification for substitution.

Q: Can I substitute a part with higher continuous drain current?

A: Yes. A device rated for higher continuous current (such as AOT27S60L at 27 A) can replace the STP24N60DM2 (18 A). The higher rating provides design margin and improved thermal performance. No circuit modification is required.

Q: What does "Obsolete" product status mean for FCP22N60N?

A: Obsolete status indicates the part is no longer manufactured. FCP22N60N should be used only when existing inventory is available or for legacy system maintenance. For new designs or long-term applications, select Active status alternatives.

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