STP210N75F6 Equivalent & Substitute Parts

Part Overview

The STP210N75F6 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 75V drain-to-source voltage and 120A continuous drain current in a TO-220 through-hole package. This device is part of the DeepGATE™ and STripFET™ VI series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary for new designs and ongoing production requirements. Substitute devices must maintain compatibility across voltage ratings, current handling, thermal characteristics, and package form factors.

Key Parameters

Parameter	STP210N75F6
Drain-to-Source Voltage (Vdss)	75 V
Continuous Drain Current (Id) @ 25°C	120 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	3.7 mOhm @ 60A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4 V @ 250 µA
Gate Charge (Qg Max) @ Vgs	171 nC @ 10 V
Power Dissipation (Max)	300 W (Tc)
Operating Temperature Range	-55°C to 175°C (TJ)
Package Type	TO-220-3
Mounting Type	Through Hole
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution of the STP210N75F6 is determined by the following critical parameters: drain-to-source voltage rating (Vdss), continuous drain current capability (Id), on-state resistance (Rds On), package type (TO-220), and mounting configuration (through-hole). Substitute parts must operate within the same voltage class (75V) and support equivalent or higher current ratings to ensure functional compatibility in existing circuit designs.

The substitute parts are grouped into two categories:

Direct Substitutes (Voltage and Current Matched): Parts with 75V Vdss rating and 120A continuous drain current capability, maintaining electrical equivalence for direct replacement.

Similar Substitutes (Voltage Matched, Current or Performance Variations): Parts with 75V Vdss rating but with variations in continuous drain current (80A to 120A) or different thermal characteristics, suitable for applications where current requirements are lower or thermal performance is enhanced.

Related Substitutes (Voltage Class Variations): Parts with different Vdss ratings (60V or 80V) that may be suitable for applications with lower voltage requirements or where the original voltage rating provides design margin.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg Max (nC)	Power Dissipation (W)	Package	Status
STP210N75F6	STMicroelectronics	75	120	3.7 @ 60A, 10V	171 @ 10V	300	TO-220-3	Obsolete
IPP023NE7N3GXKSA1	Infineon Technologies	75	120	2.3 @ 100A, 10V	206 @ 10V	300	TO-220-3	Active
IRFB3077PBF	Infineon Technologies	75	120	3.3 @ 75A, 10V	220 @ 10V	370	TO-220-3	Active
IPP034NE7N3GXKSA1	Infineon Technologies	75	100	3.4 @ 100A, 10V	117 @ 10V	214	TO-220-3	Active
STP170N8F7	STMicroelectronics	80	120	3.9 @ 60A, 10V	120 @ 10V	250	TO-220-3	Obsolete
IRFB3607PBF	Infineon Technologies	75	80	9 @ 46A, 10V	84 @ 10V	140	TO-220-3	Not For New Designs
DMTH6004SCT	Diodes Incorporated	60	100	3.65 @ 100A, 10V	95.4 @ 10V	136	TO-220-3	Active

Engineering Selection Recommendations

For Direct Replacement (Preferred):

The IPP023NE7N3GXKSA1 (Infineon OptiMOS™) is the primary direct substitute for the STP210N75F6. Both devices share identical 75V Vdss and 120A continuous drain current ratings with TO-220-3 packaging. The IPP023NE7N3GXKSA1 is classified as Active and carries ROHS3 compliance, making it suitable for new designs. The lower on-state resistance (2.3 mOhm vs. 3.7 mOhm) provides improved thermal performance and reduced power dissipation in high-current applications.

The IRFB3077PBF (Infineon HEXFET®) provides an alternative direct substitute with matching 75V/120A specifications. This device is Active and ROHS3 compliant, with superior power dissipation capability (370W vs. 300W), offering enhanced thermal headroom for demanding applications.

For Current-Reduced Applications:

The IPP034NE7N3GXKSA1 (Infineon OptiMOS™) is suitable where continuous drain current requirements are 100A or lower. This device maintains the 75V voltage rating and TO-220-3 package compatibility while offering lower gate charge (117 nC) and reduced power dissipation (214W), beneficial for lower-current circuit designs.

For Voltage-Reduced Applications:

The DMTH6004SCT (Diodes Incorporated) is applicable for circuits operating at 60V or lower. This Active device provides 100A continuous drain current with comparable on-state resistance and is ROHS3 compliant. Selection of this part requires confirmation that the 60V voltage rating is acceptable for the target application.

Obsolete Alternatives (Not Recommended for New Designs):

The STP170N8F7 (STMicroelectronics STripFET™ F7) shares the same manufacturer lineage but is also classified as Obsolete. The IRFB3607PBF is classified as Not For New Designs and should be avoided for new product development.

All recommended substitutes maintain RoHS3 compliance, REACH unaffected status, and operating temperature range compatibility (-55°C to 175°C).

Frequently Asked Questions (FAQ)

Q: Can the IPP023NE7N3GXKSA1 be used as a direct drop-in replacement for the STP210N75F6?

A: Yes. Both devices share identical 75V Vdss, 120A continuous drain current, and TO-220-3 package specifications. The IPP023NE7N3GXKSA1 is Active and ROHS3 compliant, making it the preferred direct substitute. Pin configuration and thermal characteristics are compatible with existing PCB layouts.

Q: What is the difference between the IPP023NE7N3GXKSA1 and IRFB3077PBF?

A: Both are 75V/120A direct substitutes with TO-220-3 packaging and Active status. The primary difference is on-state resistance: IPP023NE7N3GXKSA1 has 2.3 mOhm (lower losses), while IRFB3077PBF has 3.3 mOhm. The IRFB3077PBF offers higher power dissipation capability (370W vs. 300W). Selection depends on thermal design requirements and gate drive characteristics.

Q: Can I use the DMTH6004SCT as a substitute if my circuit operates at 75V?

A: No. The DMTH6004SCT is rated for 60V maximum Vdss. Using it in a 75V circuit exceeds the device rating and creates reliability risk. Substitutes must maintain or exceed the original voltage rating.

Q: Is the STP170N8F7 a suitable alternative?

A: The STP170N8F7 is not recommended. Although it provides 75V/120A specifications, it is classified as Obsolete, matching the status of the original STP210N75F6. For new designs, Active-status alternatives such as IPP023NE7N3GXKSA1 or IRFB3077PBF are required.

Q: What does the lower on-state resistance of the IPP023NE7N3GXKSA1 mean for my application?

A: Lower on-state resistance (2.3 mOhm vs. 3.7 mOhm) reduces conduction losses and heat generation during operation. This improves efficiency and may reduce thermal management requirements. The trade-off is typically higher gate charge, requiring adequate gate drive capability.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (IPP023NE7N3GXKSA1, IRFB3077PBF, IPP034NE7N3GXKSA1, and DMTH6004SCT) are ROHS3 compliant and REACH unaffected, meeting environmental and regulatory requirements for current production.

Q: Can I use the IPP034NE7N3GXKSA1 if my design only requires 100A?

A: Yes. The IPP034NE7N3GXKSA1 is rated for 100A continuous drain current and maintains the 75V voltage rating and TO-220-3 package. This device is suitable for applications where the current requirement does not exceed 100A, offering lower gate charge and reduced power dissipation compared to 120A-rated alternatives.

Q: What is the significance of the different package designations (TO-220-3 vs. TO-220AB vs. PG-TO220-3-1)?

A: All listed substitutes use the TO-220 form factor with three leads (drain, gate, source), ensuring mechanical and thermal compatibility. Designations such as TO-220AB and PG-TO220-3-1 are manufacturer-specific nomenclature for the same physical package. Pin assignments and mounting footprints are identical across all listed parts.

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