STP200N4F3 N-Channel 40V 120A MOSFET Equivalent & Substitute Parts

Part Overview

The STP200N4F3 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 40V drain-to-source voltage and 120A continuous drain current in a TO-220-3 through-hole package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production support. The part operates across a temperature range of -55°C to 175°C and dissipates up to 300W at the case temperature, making it suitable for high-current switching applications in industrial and power conversion circuits.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	120	A (Tc)
On-State Resistance (Rds On) @ 80A, 10V	4.4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	75	nC
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution of the STP200N4F3 is determined by the following critical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 40V minimum
Continuous Drain Current (Id): 120A or greater at 25°C case temperature
Package Type: TO-220-3 through-hole configuration
Operating Temperature Range: -55°C to 175°C minimum
Gate Drive Voltage: 10V nominal

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower or equivalent values preferred for thermal performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation Rating: 250W or greater for thermal margin

Substitute parts are grouped into two categories:

Category A – Direct Equivalents (120A Rating): Parts meeting or exceeding the 120A continuous drain current specification with 40V Vdss rating and TO-220-3 packaging. These provide direct functional replacement with comparable or improved electrical characteristics.

Category B – Functional Alternatives (80A–210A Rating): Parts with 40V Vdss and TO-220-3 packaging but with drain current ratings between 80A and 210A. These accommodate applications where the full 120A capability is not required or where higher current capacity provides design margin.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Temp Range (°C)	Status	Package
STP200N4F3	STMicroelectronics	40	120 (Tc)	4.4 @ 80A	75 @ 10V	300 (Tc)	-55 to 175	Obsolete	TO-220-3
IPP015N04NGXKSA1	Infineon Technologies	40	120 (Tc)	1.5 @ 100A	250 @ 10V	250 (Tc)	-55 to 175	Active	TO-220-3
IRF2204PBF	Infineon Technologies	40	210 (Tc)	3.6 @ 130A	200 @ 10V	330 (Tc)	-55 to 175	Active	TO-220-3
IRF1404ZPBF	Infineon Technologies	40	180 (Tc)	3.7 @ 75A	150 @ 10V	200 (Tc)	-55 to 175	Active	TO-220-3
IRF1404PBF	Infineon Technologies	40	202 (Tc)	4 @ 121A	196 @ 10V	333 (Tc)	-55 to 175	Not For New Designs	TO-220-3
IRF2804PBF	Infineon Technologies	40	75 (Tc)	2.3 @ 75A	240 @ 10V	300 (Tc)	-55 to 175	Active	TO-220-3
DMT4005SCT	Diodes Incorporated	40	100 (Tc)	4.7 @ 50A	49.1 @ 10V	104 (Tc)	-55 to 150	Active	TO-220-3
FDP8441	Fairchild Semiconductor	40	80 (Tc)	2.7 @ 80A	280 @ 10V	300 (Tc)	-55 to 175	Active	TO-220-3
IPP041N04NGXKSA1	Infineon Technologies	40	80 (Tc)	4.1 @ 80A	56 @ 10V	94 (Tc)	-55 to 175	Active	TO-220-3
IPP039N04LGXKSA1	Infineon Technologies	40	80 (Tc)	3.9 @ 80A	78 @ 10V	94 (Tc)	-55 to 175	Not For New Designs	TO-220-3

Engineering Selection Recommendations

For Direct Replacement (120A Equivalent):

The IPP015N04NGXKSA1 from Infineon Technologies is the primary recommended substitute. This part maintains the 120A continuous drain current rating and 40V Vdss specification while offering superior on-state resistance (1.5 mOhm versus 4.4 mOhm), resulting in reduced power dissipation and improved thermal performance. The device carries Active product status and is qualified for new designs. Operating temperature range matches the original specification (-55°C to 175°C). RoHS3 compliance and REACH unaffected status align with the STP200N4F3 environmental certifications.

For Higher Current Capacity Applications:

The IRF2204PBF provides 210A continuous drain current with 40V Vdss in TO-220-3 packaging. This part offers the highest current capacity among available substitutes with Active product status. The 3.6 mOhm on-state resistance and 330W power dissipation rating provide thermal margin for demanding applications. Full temperature range compatibility (-55°C to 175°C) and RoHS3 compliance are maintained.

The IRF1404ZPBF offers 180A continuous drain current with improved on-state resistance (3.7 mOhm) and Active product status. This part balances current capacity with thermal efficiency.

For Current-Limited Applications:

The IPP041N04NGXKSA1 provides 80A continuous drain current with 40V Vdss and Active product status. This part is suitable for applications where the full 120A capability is not required, offering lower gate charge (56 nC) for reduced switching losses.

Parts to Avoid for New Designs:

IRF1404PBF and IPP039N04LGXKSA1 carry "Not For New Designs" status and should not be selected for new product development.

The DMT4005SCT, while Active, has a reduced operating temperature maximum of 150°C (versus 175°C) and lower power dissipation rating (104W), limiting its suitability for high-temperature applications.

Frequently Asked Questions (FAQ)

Q: Can the IPP015N04NGXKSA1 directly replace the STP200N4F3 without circuit modifications?

A: Yes. The IPP015N04NGXKSA1 maintains identical voltage and current ratings (40V, 120A) with TO-220-3 packaging. The superior on-state resistance (1.5 mOhm versus 4.4 mOhm) reduces power dissipation, improving thermal performance. Gate threshold voltage and maximum gate voltage specifications are compatible. No circuit modifications are required.

Q: What is the significance of the on-state resistance (Rds On) difference between the STP200N4F3 and substitute parts?

A: On-state resistance directly determines conduction losses in the MOSFET. The STP200N4F3 exhibits 4.4 mOhm at 80A and 10V gate drive. Lower Rds On values in substitute parts (such as 1.5 mOhm in the IPP015N04NGXKSA1) reduce power dissipation and heat generation, improving efficiency and thermal margin. Higher Rds On values (such as 4.7 mOhm in the DMT4005SCT) increase losses and may require enhanced thermal management.

Q: Why do some substitute parts have lower continuous drain current ratings than the STP200N4F3?

A: Parts such as the IPP041N04NGXKSA1 and IPP039N04LGXKSA1 are rated for 80A continuous drain current. These devices are suitable for applications where the full 120A capability is not required. Selection depends on actual circuit current demands. Using a lower-rated device in a 120A application would result in thermal stress and potential failure.

Q: What is the impact of gate charge (Qg) differences on circuit performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. The STP200N4F3 has 75 nC gate charge at 10V. Substitute parts range from 49.1 nC (DMT4005SCT) to 280 nC (FDP8441). Lower gate charge reduces switching losses and allows faster switching speeds, beneficial in high-frequency applications. Higher gate charge increases switching losses and may require stronger gate drive circuits.

Q: Is the TO-220-3 package identical across all substitute parts?

A: All substitute parts listed use TO-220-3 through-hole packaging, ensuring mechanical and thermal interface compatibility. However, some manufacturers designate the package as TO-220AB or PG-TO220-3-1. These designations refer to the same physical package with identical pin configuration and mounting requirements. Thermal performance depends on PCB layout and heatsink interface, not package designation.

Q: Can the IRF1405ZPBF (55V rated) be used as a substitute for the STP200N4F3 (40V rated)?

A: No. The IRF1405ZPBF is rated for 55V drain-to-source voltage, which exceeds the STP200N4F3 specification of 40V. While higher voltage rating does not create a direct incompatibility, this part is not included in the primary substitute list because it does not match the specified 40V Vdss requirement. Use only parts rated for 40V Vdss or lower to maintain design specifications.

Q: What does "Not For New Designs" product status mean for the IRF1404PBF?

A: "Not For New Designs" indicates that the manufacturer no longer recommends this part for new product development, though existing inventory may remain available. For new designs, select parts with Active product status such as IRF2204PBF, IRF1404ZPBF, or IPP015N04NGXKSA1 to ensure long-term availability and manufacturer support.

Q: How does the operating temperature range affect part selection?

A: The STP200N4F3 operates from -55°C to 175°C. Most substitute parts maintain this range. The DMT4005SCT is limited to -55°C to 150°C, reducing its suitability for high-temperature applications. For applications requiring the full -55°C to 175°C range, select parts explicitly rated for this specification.

Q: What is the difference between power dissipation ratings at Ta (ambient temperature) versus Tc (case temperature)?

A: Power dissipation at Tc (case temperature) represents the maximum power the device can dissipate when the case is maintained at a specified temperature (typically 25°C). The DMT4005SCT lists 2.3W at Ta and 104W at Tc, indicating that thermal management through heatsinking significantly affects power handling capability. The STP200N4F3 and most substitutes specify power dissipation at Tc, which is the relevant metric for high-current applications with heatsinking.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed carry RoHS3 compliance certification, matching the STP200N4F3 environmental standard. This ensures compatibility with modern manufacturing and environmental regulations.

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