STP19NB20 Equivalent & Substitute Parts

Part Overview

The STP19NB20 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 200V drain-to-source voltage with 19A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is designed for power switching applications requiring 125W maximum power dissipation. The STP19NB20 is classified as obsolete, necessitating identification of active equivalent parts that maintain electrical and mechanical compatibility for ongoing system support and new designs.

Substiute Parts

STP19NB20

STMicroelectronicsIn Stock: 3123STP19NB20 Datasheet

Current PartRFQ

IRF200B211

Infineon TechnologiesIn Stock: 7114IRF200B211 Datasheet

SimilarRFQ

IRF640PBF

Vishay SiliconixIn Stock: 25426IRF640PBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STP19NB20 is determined by strict electrical and mechanical parameter matching within the N-Channel MOSFET category. The following criteria establish substitution validity:

Primary Matching Criteria:

• Drain to Source Voltage (Vdss): 200V minimum
• Continuous Drain Current (Id): Equal to or greater than 19A
• Package Type: TO-220-3 through-hole configuration
• FET Technology: N-Channel MOSFET (Metal Oxide)
• Maximum Power Dissipation: Equal to or greater than 125W

Secondary Compatibility Parameters:

• Gate Charge (Qg): Comparable switching characteristics
• Rds On (Max): Electrical performance within acceptable range
• Operating Temperature Range: Support for thermal requirements
• Vgs (Max): Gate voltage rating compatibility

The identified substitute parts meet these criteria and are classified as active products with current manufacturing status.

Parameter Comparison

Engineering Selection Recommendations

IRF640PBF (Vishay Siliconix)

The IRF640PBF is the primary substitute for the STP19NB20. This device matches the 200V voltage rating and 125W power dissipation specification. The continuous drain current of 18A is within 95% of the original 19A specification, and the Rds On value of 180 mOhm is identical. The IRF640PBF is classified as active with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The operating temperature range extends to 150°C, matching the original specification. This part is suitable for direct replacement in existing designs.

IRF200B211 (Infineon Technologies)

The IRF200B211 is a secondary substitute option. While it maintains the 200V voltage rating and TO-220-3 package compatibility, the continuous drain current is rated at 12A, which is 37% below the original 19A specification. The maximum power dissipation is 80W, compared to the original 125W. This part is classified as active with ROHS3 compliance and supports an extended operating temperature range to 175°C. The IRF200B211 is suitable only for applications where the reduced current and power ratings are acceptable.

Both substitute parts are active products with current manufacturing status and regulatory compliance certifications, ensuring supply chain continuity and design support.

Frequently Asked Questions (FAQ)

Q: Can the IRF640PBF directly replace the STP19NB20 in all applications?

A: The IRF640PBF meets the primary electrical specifications of the STP19NB20, including 200V Vdss, 18A continuous drain current (within 95% of original), 125W power dissipation, and identical Rds On values. The TO-220-3 package is mechanically compatible. Direct replacement is valid for applications operating within these parameter ranges.

Q: Why is the IRF200B211 listed as a substitute if it has lower current and power ratings?

A: The IRF200B211 meets the core voltage rating (200V) and package requirements (TO-220-3). However, the 12A current rating and 80W power dissipation are reduced compared to the original 19A and 125W specifications. This part is suitable only for applications where the reduced electrical performance is acceptable. Circuit redesign or thermal management adjustments may be required.

Q: Are there package compatibility concerns between TO-220-3 and TO-220AB?

A: The TO-220-3 and TO-220AB packages are mechanically and electrically compatible for through-hole mounting applications. Both packages feature three leads with identical pin configurations and mounting hole spacing, allowing direct board-level substitution without layout modifications.

Q: What is the impact of different gate charge values on circuit performance?

A: Gate charge (Qg) affects switching speed and driver circuit requirements. The STP19NB20 has 40 nC, the IRF640PBF has 70 nC, and the IRF200B211 has 23 nC. Higher gate charge requires longer switching times and may increase driver power consumption. Lower gate charge enables faster switching. Circuit validation is necessary if gate charge differences exceed 50% of the original specification.

Q: How do the Vgs (Max) differences affect circuit design?

A: The STP19NB20 supports ±30V gate voltage, while both substitute parts support ±20V. If the original design applies gate voltages exceeding ±20V, the substitute parts will not be compatible. Verify gate drive voltage levels in the application circuit before substitution.

Q: What is the significance of RoHS compliance status?

A: The STP19NB20 is RoHS non-compliant, while both substitute parts (IRF640PBF and IRF200B211) are ROHS3 compliant. For new designs or applications subject to RoHS regulations, the compliant substitute parts are required. For legacy system maintenance, either part may be acceptable depending on regulatory requirements.

Q: Are there thermal management differences between the main part and substitutes?

A: All three parts support 125W or greater power dissipation and are housed in TO-220 packages with identical thermal characteristics. The IRF200B211 is rated for 80W maximum, which may require thermal management adjustments in high-power applications. Operating temperature ranges differ: STP19NB20 to 150°C, IRF640PBF to 150°C, and IRF200B211 to 175°C.