STP170N8F7 Equivalent & Substitute Parts

Part Overview

The STP170N8F7 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 80V drain-to-source voltage and 120A continuous drain current in a TO-220 through-hole package. This device is part of the STripFET™ F7 series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	80	V
Continuous Drain Current (Id) @ 25°C	120	A (Tc)
On-State Resistance (Rds On) @ 60A, 10V	3.9	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	V
Power Dissipation (Max)	250	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
Gate Charge (Qg) @ 10V	120	nC
Input Capacitance (Ciss) @ 40V	8710	pF

Substitute Part Grouping Explanation

Substitution of the STP170N8F7 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 80V minimum
Continuous Drain Current (Id): 120A minimum at 25°C
On-State Resistance (Rds On): Comparable performance at rated current
Package Type: TO-220 through-hole configuration
Operating Temperature Range: -55°C to 175°C minimum

Substitution Categories:

Direct Manufacturer Equivalents maintain identical voltage and current ratings from the same manufacturer series, ensuring pin-compatible replacement with minimal design impact.

Similar Performance Substitutes from alternative manufacturers meet or exceed the primary electrical specifications (Vdss and Id ratings) while maintaining TO-220 packaging. These parts may have variations in secondary parameters such as gate charge, input capacitance, or on-state resistance, but remain functionally compatible within the same application envelope.

Voltage-Rated Alternatives include parts rated at 100V Vdss, which provide additional voltage margin while maintaining 120A or greater current capability. These are suitable for applications where the higher voltage rating does not create design constraints.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
STP170N8F7	STMicroelectronics	80	120	3.9 @ 60A	4.5 @ 250µA	120 @ 10V	8710 @ 40V	250	TO-220-3	Obsolete
STP140N8F7	STMicroelectronics	80	90	4.3 @ 45A	4.5 @ 250µA	96 @ 10V	6340 @ 40V	200	TO-220-3	Active
IRFB3207ZPBF	Infineon Technologies	75	120	4.1 @ 75A	4.0 @ 150µA	170 @ 10V	6920 @ 50V	300	TO-220-3	Active
IRFB3077PBF	Infineon Technologies	75	120	3.3 @ 75A	4.0 @ 250µA	220 @ 10V	9400 @ 50V	370	TO-220-3	Active
AOT284L	Alpha & Omega Semiconductor Inc.	80	105	4.5 @ 20A	3.3 @ 250µA	100 @ 10V	5154 @ 40V	250	TO-220-3	Active
FDP045N10A-F102	onsemi	100	120	4.5 @ 100A	4.0 @ 250µA	74 @ 10V	5270 @ 50V	263	TO-220-3	Active
FDP047N10	onsemi	100	120	4.7 @ 75A	4.5 @ 250µA	210 @ 10V	15265 @ 25V	375	TO-220-3	Active
FDP053N08B-F102	onsemi	80	75	5.3 @ 75A	4.5 @ 250µA	85 @ 10V	5960 @ 40V	146	TO-220-3	Active
IPP039N10N5AKSA1	Infineon Technologies	100	100	3.9 @ 50A	3.8 @ 125µA	95 @ 10V	7000 @ 50V	188	TO-220-3	Active
DMTH10H005LCT	Diodes Incorporated	100	140	5.0 @ 13A	3.5 @ 250µA	114 @ 10V	3688 @ 50V	187	TO-220-3	Active
DMTH10H005SCT	Diodes Incorporated	100	140	5.0 @ 13A	4.0 @ 250µA	111.7 @ 10V	8474 @ 50V	187	TO-220-3	Active

Engineering Selection Recommendations

Tier 1 - Direct Manufacturer Equivalent (Same Series):

STP140N8F7 from STMicroelectronics is the primary equivalent within the STMicroelectronics product line. This part maintains the same 80V Vdss rating and TO-220-3 package. The continuous drain current is rated at 90A, which is lower than the STP170N8F7's 120A rating. This part is suitable for applications where the 90A current rating is sufficient. The part is Active status and ROHS3 compliant.

Tier 2 - Cross-Manufacturer Substitutes with Matching Voltage Rating (80V):

AOT284L from Alpha & Omega Semiconductor Inc. maintains the 80V Vdss rating with 105A continuous drain current capability. This part is rated for 250W power dissipation, matching the STP170N8F7. The part is Active status and ROHS3 compliant. The on-state resistance is 4.5 mOhm at 20A, 10V, which is slightly higher than the original part.

FDP053N08B-F102 from onsemi is rated at 80V Vdss but with 75A continuous drain current, which is below the STP170N8F7 specification. This part is suitable only for applications requiring less than 75A continuous current.

Tier 3 - Higher Voltage Rated Substitutes (100V Vdss):

FDP045N10A-F102 from onsemi is rated at 100V Vdss with 120A continuous drain current, matching the current capability of the STP170N8F7. Power dissipation is rated at 263W. The on-state resistance is 4.5 mOhm at 100A, 10V. This part is Active status and ROHS3 compliant. The higher voltage rating provides additional design margin.

FDP047N10 from onsemi is rated at 100V Vdss with 120A continuous drain current. Power dissipation is rated at 375W, providing superior thermal performance. The on-state resistance is 4.7 mOhm at 75A, 10V. This part is Active status and ROHS3 compliant.

IRFB3207ZPBF from Infineon Technologies is rated at 75V Vdss with 120A continuous drain current and 300W power dissipation. The on-state resistance is 4.1 mOhm at 75A, 10V. This part is Active status and ROHS3 compliant. The lower voltage rating (75V) requires verification that the application does not exceed this limit.

IRFB3077PBF from Infineon Technologies is rated at 75V Vdss with 120A continuous drain current and 370W power dissipation. The on-state resistance is 3.3 mOhm at 75A, 10V, providing superior on-state performance. This part is Active status and ROHS3 compliant.

IPP039N10N5AKSA1 from Infineon Technologies is rated at 100V Vdss with 100A continuous drain current. Power dissipation is rated at 188W. The on-state resistance is 3.9 mOhm at 50A, 10V. This part is Active status and ROHS3 compliant. The current rating is 100A, which is below the STP170N8F7 specification.

DMTH10H005LCT and DMTH10H005SCT from Diodes Incorporated are rated at 100V Vdss with 140A continuous drain current, exceeding the STP170N8F7 current capability. Both parts are Active status and ROHS3 compliant. DMTH10H005LCT is automotive qualified (AEC-Q101). Power dissipation is rated at 187W for both variants.

Compliance and Certification:

All substitute parts listed are ROHS3 compliant and REACH unaffected. All parts maintain the -55°C to 175°C operating temperature range or exceed it. All parts are classified as Active status, ensuring long-term availability and supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can STP140N8F7 directly replace STP170N8F7 in all applications?

A: STP140N8F7 is suitable only for applications where the continuous drain current requirement does not exceed 90A. The STP170N8F7 is rated for 120A continuous drain current. If the application requires the full 120A capability, STP140N8F7 is not a suitable replacement.

Q: What is the difference between 80V and 100V rated MOSFETs in terms of substitution?

A: MOSFETs rated at 100V Vdss can be used in applications designed for 80V Vdss devices, as the higher voltage rating provides additional safety margin. However, the application circuit must be verified to ensure that the higher voltage rating does not introduce design complications. All other electrical parameters must be evaluated for compatibility.

Q: Are the Infineon IRFB3207ZPBF and IRFB3077PBF suitable replacements despite their 75V rating?

A: These parts are suitable only if the application circuit operates at or below 75V drain-to-source voltage. The 75V rating is lower than the STP170N8F7's 80V rating. Circuit verification is required to confirm that the maximum drain-to-source voltage does not exceed 75V under all operating conditions, including transient overvoltage events.

Q: What is the significance of on-state resistance (Rds On) variation among substitute parts?

A: On-state resistance directly affects power dissipation and heat generation. Lower Rds On values result in lower power loss and reduced thermal stress. The STP170N8F7 has Rds On of 3.9 mOhm at 60A, 10V. Substitute parts with higher Rds On values will generate more heat at the same current level. Thermal design must account for these differences.

Q: Can FDP053N08B-F102 be used as a substitute for STP170N8F7?

A: FDP053N08B-F102 is rated at only 75A continuous drain current, which is significantly below the STP170N8F7's 120A rating. This part is suitable only for applications requiring less than 75A continuous current and is not a general-purpose substitute for the STP170N8F7.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes, all substitute parts listed are available in TO-220-3 through-hole package configuration, ensuring mechanical compatibility with existing PCB layouts and socket designs.

Q: What is the impact of gate charge (Qg) differences on circuit performance?

A: Gate charge affects the gate drive circuit requirements and switching speed. Higher gate charge requires more drive current and energy from the gate driver. The STP170N8F7 has Qg of 120 nC at 10V. Substitute parts with significantly higher gate charge (such as IRFB3077PBF at 220 nC) may require gate driver circuit adjustments to maintain switching performance.

Q: Are automotive-qualified parts available as substitutes?

A: DMTH10H005LCT from Diodes Incorporated is automotive qualified to AEC-Q101 standard. This part is suitable for automotive applications requiring qualified components. Other substitute parts are not explicitly listed with automotive qualification.

Q: What is the difference between Tc and Ta temperature ratings?

A: Tc (case temperature) and Ta (ambient temperature) are different measurement points. Tc is measured at the device case, while Ta is measured in the ambient environment. The STP170N8F7 specifications use Tc for current and power ratings. Substitute parts using Ta ratings may have different thermal performance characteristics.

Q: Can higher power dissipation rated parts be used as direct substitutes?

A: Yes, parts with higher power dissipation ratings (such as FDP047N10 at 375W versus STP170N8F7 at 250W) can be used as substitutes. Higher power dissipation ratings indicate superior thermal performance and reduced thermal stress. All other electrical parameters must be verified for compatibility.

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