STP16NK65Z Equivalent & Substitute Parts Reference

Part Overview

STP16NK65Z is an N-Channel MOSFET manufactured by STMicroelectronics, featuring a Drain to Source Voltage (Vdss) of 650 V and a continuous drain current of 13A (Tc). The part offers high power dissipation up to 190W (Tc) and is packaged in a TO-220-3 through-hole format. As this MOSFET is categorized as obsolete, identifying equivalent and substitute parts is necessary to maintain ongoing system support, serviceability, and procurement integrity.

Key Parameters

Parameter	STP16NK65Z
Manufacturer	STMicroelectronics
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Rds On (Max) @ Id, Vgs	500mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Max) @ Id	4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	89 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2750 pF @ 25 V
Power Dissipation (Max)	190W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

Substitute Part Grouping Explanation

Substitution grouping is strictly based on the following electrical and mechanical parameters: device category (Transistors, FETs, MOSFETs), FET type (N-Channel), technology (MOSFET), drain to source voltage (Vdss), continuous drain current (Id) at 25°C, maximum Rds On at specified test conditions, gate-source threshold voltage (Vgs(th)), gate charge (Qg), maximum gate-source voltage (Vgs), input capacitance (Ciss), maximum power dissipation, compatible operating temperature range, mounting type, and package/case. All substitute MOSFETs must meet or exceed specified compliance certifications (RoHS, REACH).

Parameter Comparison

Parameter	STP16NK65Z	IPP65R420CFDXKSA1
Manufacturer	STMicroelectronics	Infineon Technologies
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V	650 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)	8.7A (Tc)
Rds On (Max) @ Id, Vgs	500mOhm @ 6.5A, 10V	420mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On)	10V	10V
Vgs(th) (Max) @ Id	4.5V @ 100µA	4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs	89 nC @ 10 V	32 nC @ 10 V
Vgs (Max)	±30V	±20V
Input Capacitance (Ciss) (Max) @ Vds	2750 pF @ 25 V	870 pF @ 100 V
Power Dissipation (Max)	190W (Tc)	83.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

Selection among obsolete and replacement MOSFETs should be based on verified product status and provided certifications. Both STP16NK65Z and IPP65R420CFDXKSA1 are marked as ROHS3 Compliant and REACH Unaffected, with an MSL rating of 1 (Unlimited), ensuring suitability for typical inventory, handling, and replacement practices. Both parts share an -55°C ~ 150°C (TJ) operating temperature range and similar through-hole TO-220-3 package compatibility, supporting direct mechanical substitution within the category.

Frequently Asked Questions (FAQ)

Q: What parameters are critical when selecting a substitute for STP16NK65Z?
A: Parameters include FET type (N-Channel), drain to source voltage (Vdss), continuous drain current (Id), Rds On (Max), gate threshold voltage (Vgs(th)), gate charge (Qg), maximum gate-source voltage (Vgs), input capacitance (Ciss), power dissipation, operating temperature, mounting type, and package/case.

Q: Is the IPP65R420CFDXKSA1 a direct mechanical substitute for STP16NK65Z?
A: IPP65R420CFDXKSA1 uses an equivalent TO-220-3 through-hole package and mounting style.

Q: Are the substitute parts compliant with standards?
A: Substitute and main parts listed are ROHS3 Compliant and REACH Unaffected with MSL 1 (Unlimited).

Q: Do substitute parts meet the required operating temperature range?
A: All compared parts have an operating junction temperature range of -55°C ~ 150°C.

Q: How is compatibility determined among MOSFET substitutes in the TO-220-3 category?
A: Compatibility is determined strictly by matching key electrical parameters and package type as provided. No further assumptions regarding system design are included.

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