STP16NF06FP N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The STP16NF06FP is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 60V drain-to-source voltage and 11A continuous drain current in a Through Hole TO-220FP package. This device is part of the STripFET™ II series and is classified as Obsolete. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating packaging and thermal performance variations.

Key Parameters

Parameter	STP16NF06FP Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	11	A
Rds On (Max) @ 8A, 10V	100	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Power Dissipation (Max)	25	W
Operating Temperature Range	-55 to 175	°C
Mounting Type	Through Hole	—
Package	TO-220-3 Full Pack	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STP16NF06FP is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 60V
Continuous Drain Current (Id) must meet or exceed 11A at 25°C
Gate Threshold Voltage (Vgs(th)) must be compatible with 4V nominal operation
Maximum Gate Voltage (Vgs) must accommodate ±20V
Operating temperature range must span -55°C to 175°C

Mechanical Compatibility Criteria:

Mounting type must be Through Hole
Package must be TO-220 variant (TO-220-3, TO-220AB, TO-220F, TO-220FP)
RoHS3 compliance required

Thermal Performance:

Power dissipation capability should support the 25W thermal requirement, though higher ratings are acceptable

Substitute parts are grouped into three categories based on their electrical performance relative to the main part: direct equivalents (matching current ratings), higher-performance alternatives (increased current and power handling), and lower-performance alternatives (reduced current ratings with acceptable electrical characteristics).

Parameter Comparison

Parameter	STP16NF06FP	STP16NF06	FQPF13N06L	IRF1010EZPBF	IRFIZ24NPBF	Unit
Manufacturer	STMicroelectronics	STMicroelectronics	onsemi	Infineon Technologies	Infineon Technologies	—
Product Status	Obsolete	Active	Obsolete	Active	Not For New Designs	—
Vdss	60	60	60	60	55	V
Continuous Drain Current (Id) @ 25°C	11	16	10	75	14	A
Rds On (Max) @ Vgs 10V	100 @ 8A	100 @ 8A	110 @ 5A	8.5 @ 51A	70 @ 7.8A	mOhm
Vgs(th) (Max) @ 250µA	4	4	2.5	4	4	V
Gate Charge (Qg) @ 10V	13	13	6.4	86	20	nC
Power Dissipation (Max)	25	45	24	140	29	W
Operating Temperature	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	°C
Package	TO-220-3 Full Pack	TO-220-3	TO-220-3 Full Pack	TO-220-3	TO-220-3 Full Pack	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

STP16NF06 (STMicroelectronics)

The STP16NF06 is the primary recommended substitute for the STP16NF06FP. Both devices are from the same STripFET™ II series and share identical electrical characteristics at the specified operating points (Rds On, Vgs(th), gate charge). The STP16NF06 offers higher continuous drain current (16A versus 11A) and increased power dissipation capability (45W versus 25W), providing design margin without introducing incompatibility. The STP16NF06 is Active status, ensuring long-term availability and supply chain stability. Packaging is TO-220-3 standard (non-Full Pack variant), which is mechanically compatible with TO-220FP applications. RoHS3 compliance is maintained.

IRFIZ24NPBF (Infineon Technologies)

The IRFIZ24NPBF is a secondary substitute suitable for applications where Infineon HEXFET® technology is acceptable. This device meets the 11A continuous current requirement and provides comparable Rds On performance (70mOhm at 7.8A, 10V). The drain-to-source voltage is rated at 55V, which is 5V lower than the STP16NF06FP specification; this device is suitable only for applications where the actual operating voltage does not exceed 55V. Product status is Not For New Designs, limiting its use to legacy system maintenance or short-term production runs. RoHS3 compliance is maintained. TO-220-3 Full Pack packaging is compatible.

IRF1010EZPBF (Infineon Technologies)

The IRF1010EZPBF is a high-performance alternative for applications requiring significantly higher current handling (75A continuous) and thermal performance (140W dissipation). This device maintains 60V Vdss rating and is Active status. The substantially lower Rds On (8.5mOhm at 51A, 10V) results in reduced power loss in high-current applications. This substitute is appropriate for designs where thermal or current margin is critical. Gate charge is higher (86nC versus 13nC), which may affect switching speed in gate-drive-limited circuits. RoHS3 compliance is maintained.

FQPF13N06L (onsemi)

The FQPF13N06L is a lower-performance alternative rated for 10A continuous current, which is below the 11A requirement of the STP16NF06FP. This device is suitable only for applications where the actual operating current does not exceed 10A. The device is Obsolete status, presenting supply chain risk. Vgs(th) is lower (2.5V versus 4V), which may affect gate drive circuit design. RoHS3 compliance is maintained. This substitute is not recommended for new designs.

Frequently Asked Questions (FAQ)

Q: Can the STP16NF06 directly replace the STP16NF06FP without circuit modification?

A: Yes. The STP16NF06 maintains identical electrical characteristics at the specified operating points (Rds On @ 8A, 10V = 100mOhm; Vgs(th) @ 250µA = 4V; gate charge @ 10V = 13nC). The higher current and power ratings provide additional design margin. TO-220-3 packaging is mechanically compatible with TO-220FP applications in standard PCB footprints.

Q: What is the difference between TO-220FP and TO-220-3 packaging?

A: TO-220FP (Full Pack) and TO-220-3 are both three-lead Through Hole packages with identical pin spacing and thermal characteristics. The primary difference is in lead forming and tape-and-reel packaging configuration. Both are compatible with standard TO-220 PCB footprints and heatsink mounting hardware.

Q: Why is the IRFIZ24NPBF rated at 55V instead of 60V?

A: The IRFIZ24NPBF is designed with a 55V Vdss rating, which is 5V lower than the STP16NF06FP. This device is suitable only for applications where the maximum drain-to-source voltage does not exceed 55V. For applications requiring 60V operation, the STP16NF06 or IRF1010EZPBF are appropriate selections.

Q: Is the IRF1010EZPBF suitable for direct substitution in all applications?

A: The IRF1010EZPBF is electrically compatible but is a higher-performance device with significantly different characteristics. The 75A continuous current rating and 8.5mOhm Rds On are substantially higher performance than required for 11A applications. The higher gate charge (86nC versus 13nC) may affect switching frequency and gate drive circuit design. This device is appropriate for applications requiring higher current capacity or lower power dissipation.

Q: What is the impact of different Rds On values on circuit performance?

A: Rds On (on-resistance) directly affects power dissipation and heat generation. Lower Rds On values reduce I²R losses. The STP16NF06 and STP16NF06FP both specify 100mOhm @ 8A, 10V, resulting in identical power dissipation at this operating point. The IRFIZ24NPBF (70mOhm) and IRF1010EZPBF (8.5mOhm) produce lower dissipation at equivalent currents, reducing thermal load on the device and heatsink.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (STP16NF06, FQPF13N06L, IRF1010EZPBF, IRFIZ24NPBF) are RoHS3 compliant, matching the compliance status of the STP16NF06FP.

Q: What does "Not For New Designs" status mean for the IRFIZ24NPBF?

A: "Not For New Designs" indicates that the manufacturer (Infineon) is not recommending this part for new circuit designs. The device remains available for existing applications and legacy system support, but long-term availability is not guaranteed. For new designs, the STP16NF06 or IRF1010EZPBF are preferred selections.

Q: Can the FQPF13N06L be used in applications requiring 11A continuous current?

A: No. The FQPF13N06L is rated for 10A continuous drain current, which is below the 11A requirement of the STP16NF06FP. Using this device in an 11A application would exceed its continuous current rating and result in thermal stress and potential device failure. This device is suitable only for applications where actual operating current does not exceed 10A.

Q: How does gate charge affect circuit design?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on or off. Higher gate charge requires more current from the gate driver circuit and increases switching time. The STP16NF06FP specifies 13nC @ 10V, while the IRF1010EZPBF specifies 86nC @ 10V. In high-frequency switching applications, the higher gate charge of the IRF1010EZPBF may require a more robust gate driver to maintain switching speed.

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