STP16N65M2 Equivalent & Substitute Parts

Part Overview

The STP16N65M2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 650V drain-to-source voltage with 11A continuous drain current at 25°C. This device operates in the MDmesh™ M2 series and is housed in a TO-220-3 through-hole package. The part is currently in active production status with 1250 pieces in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible mechanical packaging. The substitute parts listed below satisfy the core functional requirements of high-voltage N-Channel MOSFET applications in the 600V to 650V range with drain currents between 9.7A and 13.7A.

Key Parameters

Parameter	STP16N65M2	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	11	A
Rds On (Max) @ Id, Vgs	360 mOhm @ 5.5A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	19.5	nC @ 10V
Power Dissipation (Max)	110	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the STP16N65M2 are grouped based on the following electrical and mechanical compatibility criteria:

Primary Substitution Parameters:

Drain-to-Source Voltage (Vdss): 600V to 650V range
Continuous Drain Current (Id): 9.7A to 13.7A at 25°C
Package Type: TO-220-3 through-hole configuration
Gate Drive Voltage: 10V nominal
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance: Required for environmental standards

Secondary Compatibility Factors:

On-state resistance (Rds On) within acceptable thermal limits
Gate charge characteristics suitable for switching applications
Input capacitance compatible with gate drive circuits

The substitute parts listed maintain electrical performance within the specified voltage and current ranges while preserving mechanical compatibility with TO-220-3 footprints. All substitutes operate across the full temperature range and meet RoHS3 compliance requirements.

Parameter Comparison

Parameter	STP16N65M2	FCP380N60	FCP380N60E	IXFP12N65X2	TK10E60W,S1VX	TK14E65W5,S1X	Unit
Manufacturer	STMicroelectronics	onsemi	Fairchild Semiconductor	IXYS	Toshiba	Toshiba	—
Vdss	650	600	600	650	600	650	V
Id @ 25°C	11	10.2	10.2	12	9.7	13.7	A
Rds On (Max)	360 @ 5.5A, 10V	380 @ 5A, 10V	380 @ 5A, 10V	310 @ 6A, 10V	380 @ 4.9A, 10V	300 @ 6.9A, 10V	mOhm
Gate Charge (Qg) @ 10V	19.5	40	45	18.5	20	40	nC
Power Dissipation (Max)	110	106	106	180	100	130	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	—
RoHS3 Compliant	Yes	Yes	Not Specified	Yes	Yes	Yes	—
Product Status	Active	Not For New Designs	Active	Active	Active	Active	—

Engineering Selection Recommendations

Primary Selection (Active Status, Full Compliance):

The IXFP12N65X2 from IXYS and TK14E65W5,S1X from Toshiba are recommended as primary substitutes for new designs. Both parts maintain 650V Vdss rating matching the STP16N65M2, operate across the full -55°C to 150°C temperature range, and carry active product status. The IXFP12N65X2 offers superior on-state resistance (310 mOhm) and higher power dissipation capability (180W), while the TK14E65W5,S1X provides the highest drain current rating (13.7A) with improved thermal performance (130W).

Secondary Selection (Active Status, Voltage Derating):

The FCP380N60E from Fairchild Semiconductor and TK10E60W,S1VX from Toshiba are suitable alternatives where 600V operation is acceptable. Both maintain active product status and full RoHS3 compliance. These parts operate at reduced voltage rating but provide equivalent or superior on-state resistance characteristics. The FCP380N60E is available in bulk packaging with 4600 units in stock.

Legacy Consideration (Not For New Designs):

The FCP380N60 from onsemi carries "Not For New Designs" status and should not be selected for new applications despite meeting electrical parameters.

Frequently Asked Questions (FAQ)

Q: Can the FCP380N60 series parts substitute for the STP16N65M2 in new designs?

A: The FCP380N60 and FCP380N60E are electrically compatible with 600V operation and 10.2A drain current. However, the FCP380N60 carries "Not For New Designs" status and should be avoided for new applications. The FCP380N60E from Fairchild Semiconductor is active and suitable for new designs where 600V operation is acceptable.

Q: What is the primary difference between IXFP12N65X2 and the STP16N65M2?

A: The IXFP12N65X2 maintains the same 650V Vdss rating and TO-220-3 package. Key differences include higher drain current (12A vs. 11A), lower on-state resistance (310 mOhm vs. 360 mOhm), and significantly higher power dissipation capability (180W vs. 110W). Gate charge is slightly lower (18.5 nC vs. 19.5 nC), indicating faster switching characteristics.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes. All listed substitute parts use TO-220-3 through-hole packaging, ensuring mechanical compatibility with existing PCB layouts and thermal management solutions designed for the STP16N65M2.

Q: Which substitute offers the best thermal performance?

A: The IXFP12N65X2 provides the highest power dissipation rating at 180W, compared to 110W for the STP16N65M2. This allows for higher continuous current operation or reduced heatsink requirements in thermally constrained applications.

Q: Do all substitutes meet RoHS3 compliance?

A: All listed substitutes except FCP380N60E explicitly state RoHS3 compliance. The FCP380N60E compliance status is not specified in the provided data. Verification with the manufacturer is recommended if RoHS3 certification is a mandatory requirement.

Q: What is the gate charge difference between substitutes, and does it matter?

A: Gate charge ranges from 18.5 nC (IXFP12N65X2) to 45 nC (FCP380N60E). Lower gate charge enables faster switching and reduced gate drive power dissipation. The STP16N65M2 at 19.5 nC is comparable to the IXFP12N65X2 and TK10E60W,S1VX, while Toshiba's TK14E65W5,S1X and onsemi's FCP380N60 series require higher gate drive energy.

Q: Can I use a 600V rated part in a 650V application?

A: No. The FCP380N60 series and TK10E60W,S1VX are rated for 600V maximum Vdss. Using these parts in applications requiring 650V operation exceeds the device rating and creates reliability risk. Use only 650V-rated substitutes (IXFP12N65X2 or TK14E65W5,S1X) for 650V applications.

Q: What inventory levels are available for each substitute?

A: IXFP12N65X2 has 1308 units, TK14E65W5,S1X has 873 units, FCP380N60E has 4600 units, FCP380N60 has 7615 units, and TK10E60W,S1VX has 946 units in stock.

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