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STP14NF10 Equivalent & Substitute Parts
Part Overview
The STP14NF10 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 100V drain-to-source voltage and 15A continuous drain current in a TO-220AB through-hole package. This device is part of the STripFET™ II series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute devices must maintain electrical compatibility within the specified voltage and current ratings while accommodating the through-hole TO-220 package form factor.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 100 | V |
| Continuous Drain Current (Id) @ 25°C | 15 | A (Tc) |
| Drive Voltage (Max Rds On) | 10 | V |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 7A, 10V | — |
| Gate Threshold Voltage Vgs(th) (Max) @ Id | 4 | V @ 250µA |
| Power Dissipation (Max) | 60 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package / Case | TO-220-3 | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the STP14NF10 is determined by the following critical parameters:
Electrical Compatibility Requirements:
- FET Type: N-Channel (mandatory match)
- Drain to Source Voltage (Vdss): Minimum 100V (equal or higher acceptable)
- Continuous Drain Current (Id): Minimum 15A at 25°C (equal or higher acceptable)
- Gate Drive Voltage: 10V maximum Rds On specification
- Operating Temperature Range: Minimum -55°C to 175°C (or subset thereof)
Mechanical Compatibility Requirements:
- Mounting Type: Through Hole
- Package / Case: TO-220-3 or compatible TO-220 variants (TO-220AB, TO-220FM)
Regulatory Compliance:
- RoHS3 Compliance (mandatory for new designs)
- REACH Status: Unaffected or Affected (both acceptable)
Substitute parts are grouped into two categories: Direct Substitutes (matching all critical parameters within tolerance) and Similar Substitutes (meeting electrical requirements with minor parameter variations or higher ratings).
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Power Dissipation (W) | Package | Product Status | RoHS3 |
|---|---|---|---|---|---|---|---|---|
| STP14NF10 | STMicroelectronics | 100 | 15 (Tc) | 130 @ 7A, 10V | 60 (Tc) | TO-220-3 | Obsolete | Compliant |
| IRF520NPBF | Infineon Technologies | 100 | 9.7 (Tc) | 200 @ 5.7A, 10V | 48 (Tc) | TO-220-3 | Active | Compliant |
| IRF530NPBF | Infineon Technologies | 100 | 17 (Tc) | 90 @ 9A, 10V | 70 (Tc) | TO-220-3 | Active | Compliant |
| IRF530PBF | Vishay Siliconix | 100 | 14 (Tc) | 160 @ 8.4A, 10V | 88 (Tc) | TO-220-3 | Active | Compliant |
| IRF540ZPBF | Infineon Technologies | 100 | 36 (Tc) | 26.5 @ 22A, 10V | 92 (Tc) | TO-220-3 | Active | Compliant |
| IRL520NPBF | Infineon Technologies | 100 | 10 (Tc) | 180 @ 6A, 10V | 48 (Tc) | TO-220-3 | Not For New Designs | Compliant |
| PHP18NQ10T,127 | Nexperia USA Inc. | 100 | 18 (Tc) | 90 @ 9A, 10V | 79 (Tc) | TO-220-3 | Obsolete | Compliant |
| PSMN009-100P,127 | NXP Semiconductors | 100 | 75 (Tc) | 8.8 @ 25A, 10V | 230 (Tc) | TO-220-3 | Active | Not Specified |
| PSMN013-100PS,127 | Nexperia USA Inc. | 100 | 68 (Tc) | 13.9 @ 15A, 10V | 170 (Tc) | TO-220-3 | Obsolete | Compliant |
| RCX120N25 | Rohm Semiconductor | 250 | 12 (Ta) | Not Specified | 40 (Tc) | TO-220-3 | Active | Compliant |
Engineering Selection Recommendations
For Active Production and New Designs:
The following parts are recommended as primary substitutes due to active product status and full RoHS3 compliance:
IRF530NPBF (Infineon Technologies) is the closest functional equivalent. It matches the 100V Vdss rating, exceeds the 15A continuous drain current requirement at 17A, and maintains the 10V gate drive specification. The device is in active production status with full RoHS3 compliance and identical TO-220-3 package configuration.
IRF540ZPBF (Infineon Technologies) provides higher current capability at 36A continuous drain current, suitable for applications requiring design margin or future current scaling. It maintains 100V Vdss, 10V gate drive compatibility, and active product status with RoHS3 compliance.
PSMN009-100P,127 (NXP Semiconductors) offers significantly higher current capacity at 75A with superior on-resistance characteristics (8.8 mOhm). This device is active and RoHS3 compliant, suitable for high-current applications where thermal performance is critical.
For Legacy System Maintenance:
IRL520NPBF (Infineon Technologies) is available in high inventory but carries "Not For New Designs" status. This device is suitable only for replacement in existing systems where pin-compatible substitution is required. It provides 10A continuous drain current, which is below the STP14NF10 specification.
Devices to Avoid:
- PHP18NQ10T,127 and PSMN013-100PS,127 are obsolete and should not be selected for new designs.
- RCX120N25 operates at 250V Vdss, exceeding application requirements and introducing unnecessary cost and thermal considerations.
- IRF530PBF (Vishay Siliconix) carries REACH Affected status, requiring additional compliance verification for regulated markets.
Frequently Asked Questions (FAQ)
Q: Can the IRF520NPBF replace the STP14NF10 directly?
A: No. The IRF520NPBF is rated for 9.7A continuous drain current, which is below the STP14NF10 specification of 15A. While it shares the same 100V Vdss rating and TO-220-3 package, it cannot safely handle the full rated current of the original device. Use IRF530NPBF or IRF540ZPBF for direct replacement.
Q: What is the difference between TO-220AB and TO-220FM packages?
A: Both are TO-220-3 variants with identical pin configurations and mechanical compatibility. TO-220AB is the standard through-hole package; TO-220FM (Full Pack) is a variant with different lead forming. Devices in either variant are mechanically interchangeable on standard PCB layouts.
Q: Why does PSMN009-100P,127 have such high current rating compared to STP14NF10?
A: PSMN009-100P,127 uses advanced trench technology with significantly lower on-resistance (8.8 mOhm versus 130 mOhm), enabling higher current handling in the same package. This device is suitable for applications requiring higher current capacity or improved thermal performance, though it introduces higher gate charge (156 nC versus 21 nC).
Q: Is RoHS3 compliance mandatory for substitute selection?
A: For new designs and regulated markets, RoHS3 compliance is mandatory. All recommended active substitutes meet this requirement. Legacy devices without RoHS3 compliance are acceptable only for maintenance of existing systems where regulatory exemptions apply.
Q: Can I use a higher voltage-rated device like RCX120N25 (250V) as a substitute?
A: While electrically functional, using a 250V device in a 100V application introduces unnecessary cost, increased parasitic capacitance, and reduced switching performance. Select devices rated at or slightly above the required 100V specification (IRF530NPBF, IRF540ZPBF, or PSMN009-100P,127).
Q: What does "Not For New Designs" status mean for IRL520NPBF?
A: This status indicates the manufacturer has discontinued active development and recommends against using this device in new product designs. It remains available for legacy system support and replacement applications only. For new designs, select active-status alternatives such as IRF530NPBF.
Q: How do I determine which substitute is best for my application?
A: Evaluate based on three criteria: (1) Required continuous drain current—select devices rated at or above 15A; (2) Thermal requirements—higher current-rated devices offer lower on-resistance and better heat dissipation; (3) Product status—prioritize active devices for new designs. IRF530NPBF provides the best balance of performance, availability, and compliance for most applications.
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