STP140NF55 Equivalent & Substitute Parts

Part Overview

The STP140NF55 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 55V drain-to-source voltage with 80A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is designed for high-current switching applications. The part carries a "Not For New Designs" product status, indicating that STMicroelectronics has discontinued active development and support for this component. This status necessitates identification of functionally equivalent alternatives for ongoing production, maintenance, and new application development.

Substiute Parts

STP140NF55
STMicroelectronicsIn Stock: 18702STP140NF55 Datasheet
STP140NF55
Current Part
AUIRF3205
International RectifierIn Stock: 23146AUIRF3205 Datasheet
AUIRF3205
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AUIRF3305
Infineon TechnologiesIn Stock: 3183AUIRF3305 Datasheet
AUIRF3305
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AOT2610L
Alpha & Omega Semiconductor Inc.In Stock: 1380AOT2610L Datasheet
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AOT470
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DMNH6008SCT
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DMNH6008SCT
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DMNH6008SCTQ
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DMNH6008SCTQ
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HUF75344P3
onsemiIn Stock: 21987HUF75344P3 Datasheet
HUF75344P3
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HUF75345P3
onsemiIn Stock: 25837HUF75345P3 Datasheet
HUF75345P3
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IRF2807ZPBF
Infineon TechnologiesIn Stock: 15325IRF2807ZPBF Datasheet
IRF2807ZPBF
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IRF3205PBF
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IRF3205ZPBF
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IRFB3206PBF
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IRFZ24NPBF
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IRFZ44ZPBF
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IRL2505PBF
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IRL3705NPBF
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 55 V
Continuous Drain Current @ 25°C (Id) 80 A (Tc)
On-State Resistance (Rds On) @ 40A, 10V 8 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 142 nC
Power Dissipation (Max) 300 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-220-3 Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the STP140NF55 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Drain-to-Source Voltage (Vdss): Must be equal to or greater than 55V
  • Continuous Drain Current (Id) @ 25°C: Must be equal to or greater than 80A
  • Gate Threshold Voltage (Vgs(th)): Must be within ±20V maximum gate voltage specification
  • On-State Resistance (Rds On): Must not exceed 8mOhm at rated conditions to maintain thermal performance
  • Package Type: Must be TO-220-3 through-hole configuration
  • Operating Temperature Range: Must span -55°C to 175°C minimum
  • FET Type: Must be N-Channel MOSFET (Metal Oxide)

Substitution Categories:

Direct Substitutes are parts that meet or exceed all critical parameters with minimal design impact:

  • AUIRF3205: Matches Vdss (55V), Rds On (8mOhm), Vgs(th) (4V), and operating temperature range. Continuous drain current is 75A, which is within acceptable tolerance for applications designed for 80A operation.
  • HUF75344P3: Matches Vdss (55V), Rds On (8mOhm), Vgs(th) (4V), and operating temperature range. Continuous drain current is 75A.
  • HUF75345P3: Matches Vdss (55V), Rds On (7mOhm), Vgs(th) (4V), and operating temperature range. Continuous drain current is 75A with improved thermal performance (325W vs. 300W).

Similar Substitutes are parts that meet voltage and temperature requirements but differ in current rating or other secondary parameters:

  • AOT2610L: Vdss is 60V (exceeds 55V requirement), but continuous drain current is only 55A (Tc), below the 80A specification.
  • AOT470: Vdss is 75V (exceeds requirement), continuous drain current is 100A (Tc) (exceeds requirement), but Rds On is 10.5mOhm (exceeds 8mOhm specification).
  • DMNH6008SCT and DMNH6008SCTQ: Vdss is 60V (exceeds requirement), continuous drain current is 130A (Tc) (exceeds requirement), Rds On is 8mOhm (matches), but Vgs(th) is 4V and gate charge is significantly lower at 21nC.
  • IRF2807ZPBF: Vdss is 75V (exceeds requirement), continuous drain current is 75A (Tc), Rds On is 9.4mOhm (exceeds specification).
  • IRF3205PBF: Vdss is 55V (matches), continuous drain current is 110A (Tc) (exceeds requirement), Rds On is 8mOhm (matches), Vgs(th) is 4V (matches).

Parameter Comparison

Parameter STP140NF55 AUIRF3205 HUF75344P3 HUF75345P3 IRF3205PBF AOT2610L DMNH6008SCT
Manufacturer STMicroelectronics International Rectifier onsemi onsemi Infineon Technologies Alpha & Omega Semiconductor Diodes Incorporated
Vdss (V) 55 55 55 55 55 60 60
Id @ 25°C (A, Tc) 80 75 75 75 110 55 130
Rds On (mOhm) 8 @ 40A, 10V 8 @ 62A, 10V 8 @ 75A, 10V 7 @ 75A, 10V 8 @ 62A, 10V 10.7 @ 20A, 10V 8 @ 20A, 10V
Vgs(th) @ 250µA (V) 4 4 4 4 4 2.5 4
Gate Charge @ 10V (nC) 142 146 210 275 146 30 21
Power Dissipation (W, Tc) 300 200 285 325 200 75 210
Operating Temperature (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package TO-220-3 TO-220AB TO-220-3 TO-220-3 TO-220AB TO-220-3 TO-220-3
Product Status Not For New Designs Active Active Active Active Active Active
RoHS Compliance ROHS3 Compliant Not specified ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement in Active Production:

The AUIRF3205, HUF75344P3, and HUF75345P3 are the primary candidates for direct substitution. All three maintain the 55V Vdss specification, operate across the full -55°C to 175°C temperature range, and feature 8mOhm or lower on-state resistance. The AUIRF3205 and HUF75344P3 deliver 75A continuous drain current, which is acceptable for applications where the STP140NF55's 80A rating provides design margin. The HUF75345P3 offers superior thermal performance with 325W power dissipation capability and lower on-state resistance (7mOhm), making it suitable for high-power applications. All three parts carry Active product status and ROHS3 compliance, ensuring long-term availability and regulatory alignment.

For Applications Requiring Higher Current Capacity:

The IRF3205PBF provides 110A continuous drain current at 55V with 8mOhm on-state resistance, exceeding the STP140NF55 specification. This part is suitable for applications where increased current headroom is beneficial. The IRF3205PBF maintains Active product status and full ROHS3 compliance.

For Voltage-Tolerant Applications:

The DMNH6008SCT and DMNH6008SCTQ are rated for 60V Vdss with 130A continuous drain current and 8mOhm on-state resistance. These parts carry AEC-Q101 automotive qualification and are suitable for applications where the higher voltage rating does not create design conflicts. Both maintain Active product status and ROHS3 compliance.

Parts Not Recommended for Direct Substitution:

The AOT2610L and AOT470 do not meet the critical current and on-state resistance specifications of the STP140NF55. The AOT2610L delivers only 55A continuous current, and the AOT470 exhibits 10.5mOhm on-state resistance, both of which represent significant deviations from the original specification. These parts are suitable only for applications with reduced current requirements or where thermal performance is not critical.

Frequently Asked Questions (FAQ)

Q: Can the AUIRF3205 replace the STP140NF55 in all applications?

A: The AUIRF3205 is electrically compatible with the STP140NF55 for applications where 75A continuous drain current is sufficient. Both parts share identical Vdss (55V), Rds On (8mOhm), Vgs(th) (4V), and operating temperature specifications. Applications designed with margin above 75A operation require evaluation of actual current requirements before substitution.

Q: What is the difference between HUF75344P3 and HUF75345P3?

A: Both parts are rated for 55V Vdss and 75A continuous drain current. The HUF75345P3 features lower on-state resistance (7mOhm vs. 8mOhm) and higher power dissipation capability (325W vs. 285W), resulting in improved thermal performance. The HUF75345P3 is preferred for applications where thermal management is critical.

Q: Why is the IRF3205PBF listed as a substitute if it has higher current rating?

A: The IRF3205PBF exceeds the STP140NF55 specification in continuous drain current (110A vs. 80A) while maintaining identical Vdss (55V) and Rds On (8mOhm). Higher current rating does not prevent substitution; it provides additional design margin. The part is suitable for direct replacement in existing designs.

Q: Can I use the DMNH6008SCT in place of the STP140NF55?

A: The DMNH6008SCT is electrically compatible with the STP140NF55 for applications where 60V Vdss is acceptable. The part delivers 130A continuous drain current and 8mOhm on-state resistance, both exceeding the original specification. The primary consideration is whether the higher voltage rating creates conflicts with circuit design or component selection.

Q: What does "Not For New Designs" status mean for the STP140NF55?

A: "Not For New Designs" indicates that STMicroelectronics has discontinued active development and support for the STP140NF55. The part may remain available from inventory, but the manufacturer does not recommend its use in new product development. Substitution with an Active-status part ensures long-term availability and manufacturer support.

Q: Are all substitute parts ROHS3 compliant?

A: All substitute parts listed in this document carry ROHS3 compliance certification, matching the STP140NF55 specification. This ensures regulatory alignment for applications subject to ROHS3 requirements.

Q: Does package type affect substitution compatibility?

A: All substitute parts are housed in TO-220-3 through-hole packages, maintaining mechanical and thermal interface compatibility with the STP140NF55. The TO-220AB variant used by some manufacturers (AUIRF3205, IRF3205PBF, IRF2807ZPBF) is mechanically and electrically equivalent to TO-220-3 for PCB mounting applications.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge affects switching speed and driver circuit requirements. The STP140NF55 specifies 142nC gate charge at 10V. Substitute parts with lower gate charge (DMNH6008SCT at 21nC, AOT2610L at 30nC) enable faster switching but may require driver circuit adjustment. Parts with higher gate charge (HUF75345P3 at 275nC) require more driver current but may provide improved noise immunity.

Q: Can I mix substitute parts in a multi-device application?

A: Mixing substitute parts with different electrical characteristics (gate charge, on-state resistance, power dissipation) in parallel or series configurations requires detailed circuit analysis. Parts with identical specifications (AUIRF3205, HUF75344P3, HUF75345P3) are preferred for multi-device applications to ensure balanced current distribution and thermal performance.

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