STP13N60DM2 Equivalent & Substitute Parts

Part Overview

The STP13N60DM2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600V drain-to-source voltage with 11A continuous drain current at 25°C. This device is housed in a TO-220 through-hole package and is part of the MDmesh™ DM2 series. The component is currently in active production status with 816 units in stock.

Substitute parts are necessary when the primary component becomes unavailable, when design requirements shift toward higher power dissipation capabilities, or when alternative voltage ratings better suit application specifications. The substitute parts listed maintain electrical compatibility within defined parameter ranges while offering different thermal performance characteristics or voltage ratings.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	11	A
Power Dissipation (Max)	110	W
Rds On (Max) @ 5.5A, 10V	365	mOhm
Gate Charge (Qg) @ 10V	19	nC
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution eligibility for N-Channel MOSFETs is determined by the following criteria:

Primary Compatibility Parameters:

Drain to Source Voltage (Vdss) must be equal to or greater than the main part specification
Continuous Drain Current (Id) must be equal to or greater than the main part specification
Gate threshold voltage (Vgs(th)) must be compatible with existing drive circuitry
Operating temperature range must encompass the main part range
Package type must be mechanically compatible with the PCB layout

Secondary Consideration Parameters:

On-state resistance (Rds On) affects power dissipation and thermal performance
Gate charge (Qg) affects switching speed and driver requirements
Input capacitance (Ciss) affects gate drive circuit design

The three substitute parts listed maintain the 600V voltage rating and 11A current rating of the main part, with variations in power dissipation capability and gate charge characteristics. One substitute part (FCP400N80Z) offers higher voltage and current ratings, suitable for applications requiring enhanced electrical headroom.

Parameter Comparison

Parameter	STP13N60DM2	FCP11N60F	FCP400N80Z	FCPF11N60F
Manufacturer	STMicroelectronics	onsemi	onsemi	onsemi
Vdss (V)	600	600	800	600
Id @ 25°C (A)	11	11	14	11
Power Dissipation Max (W)	110	125	195	36
Rds On Max @ 5.5A, 10V (mOhm)	365	380	400	380
Gate Charge @ 10V (nC)	19	52	56	52
Vgs(th) @ 250µA (V)	5	5	4.5	5
Vgs Max (±V)	25	30	20	30
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220	TO-220-3	TO-220-3	TO-220F-3
Product Status	Active	Not For New Designs	Not For New Designs	Not For New Designs
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

STP13N60DM2 (Primary Component)

The STP13N60DM2 is the recommended choice for new designs. This part maintains active production status with STMicroelectronics and carries full ROHS3 compliance. The 110W power dissipation rating and 365mOhm on-state resistance provide balanced thermal and electrical performance for standard 600V applications. The lower gate charge (19nC) compared to substitute parts reduces driver circuit complexity and switching losses.

FCP11N60F (onsemi)

This part is electrically equivalent to the main part with identical voltage and current ratings. It offers slightly higher power dissipation capability (125W) and is ROHS3 compliant. However, the product status is "Not For New Designs," indicating onsemi has discontinued active development. The gate charge is significantly higher (52nC), requiring gate driver circuits rated for increased charge delivery. This part is suitable for legacy system maintenance or replacement applications only.

FCP400N80Z (onsemi)

This part provides enhanced electrical ratings with 800V Vdss and 14A continuous drain current, delivering 195W maximum power dissipation. It is appropriate for applications requiring higher voltage headroom or increased current capacity beyond the 600V/11A specification. The higher gate charge (56nC) and input capacitance (2350pF) demand gate driver circuits with greater current delivery capability. Product status is "Not For New Designs." This part is suitable for applications where the main part's voltage or current ratings are insufficient.

FCPF11N60F (onsemi)

This part shares the same electrical ratings as FCP11N60F but uses a TO-220F-3 package variant (full pack configuration). The significantly reduced power dissipation rating (36W) indicates this variant is designed for lower thermal load applications. The gate charge and on-state resistance match FCP11N60F. Product status is "Not For New Designs." This part is suitable only for legacy applications where the TO-220F package footprint is required and thermal dissipation is limited.

Frequently Asked Questions (FAQ)

Q: Can FCP11N60F be used as a direct replacement for STP13N60DM2?

A: FCP11N60F maintains identical voltage (600V) and current (11A) ratings, making it electrically compatible. However, the gate charge is 2.7 times higher (52nC vs. 19nC), requiring verification that the gate driver circuit can deliver the additional charge. The product status "Not For New Designs" indicates this is suitable for replacement applications only, not new designs.

Q: What is the difference between FCP11N60F and FCPF11N60F?

A: Both parts share identical electrical specifications and gate charge characteristics. The primary difference is the package type: FCP11N60F uses TO-220-3 standard configuration, while FCPF11N60F uses TO-220F-3 full pack configuration. Additionally, FCPF11N60F has a significantly lower power dissipation rating (36W vs. 125W), indicating it is designed for lower thermal load applications. Package selection depends on PCB layout requirements and thermal management strategy.

Q: When should FCP400N80Z be selected instead of the main part?

A: FCP400N80Z is selected when the application requires voltage ratings exceeding 600V or current capacity exceeding 11A. The 800V/14A rating provides additional electrical headroom for high-voltage switching applications. The 195W power dissipation capability supports higher power throughput. The higher gate charge (56nC) requires gate driver circuits with increased current delivery capability.

Q: Are all substitute parts ROHS3 compliant?

A: Yes, all listed substitute parts (FCP11N60F, FCP400N80Z, FCPF11N60F) carry ROHS3 compliance certification, matching the main part's environmental compliance status.

Q: What does "Not For New Designs" product status mean?

A: "Not For New Designs" indicates the manufacturer has discontinued active development and support for that component. These parts remain available for existing system maintenance and replacement but should not be selected for new product development. The STP13N60DM2 maintains "Active" status and is the recommended choice for new designs.

Q: How does gate charge affect circuit design?

A: Gate charge (Qg) determines the total charge the gate driver must deliver to switch the MOSFET. The STP13N60DM2 requires 19nC, while substitute parts FCP11N60F and FCPF11N60F require 52nC. Higher gate charge increases switching time and driver circuit power dissipation. Existing gate driver circuits rated for 19nC may require redesign or selection of a higher-current driver when using substitute parts with higher gate charge specifications.

Q: Can the TO-220F package be used interchangeably with TO-220 on the same PCB?

A: No. The TO-220F-3 package (FCPF11N60F) has a different mechanical footprint than the standard TO-220-3 package. PCB layout modifications are required to accommodate the full pack configuration. Verify PCB hole spacing and lead positioning before substitution.

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