STP130N10F3 Equivalent & Substitute Parts

Part Overview

The STP130N10F3 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 100V drain-to-source voltage and 120A continuous drain current in a TO-220 through-hole package. This device is part of the STripFET™ III series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain compatibility across critical electrical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating the through-hole TO-220 package format.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	120	A (Tc)
On-Resistance (Rds On) @ 60A, 10V	9.6	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	57	nC
Power Dissipation (Max)	250	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the STP130N10F3 is determined by strict adherence to the following critical parameters:

Mandatory Compatibility Parameters:

Drain to Source Voltage (Vdss): 100V minimum
Continuous Drain Current (Id): 120A or greater at 25°C
Package Type: TO-220-3 through-hole configuration
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 175°C minimum

Performance Parameters for Functional Equivalence:

On-Resistance (Rds On): 9.6 mOhm or lower at specified conditions
Gate Threshold Voltage (Vgs(th)): 4V or lower
Power Dissipation: 250W or greater
Gate Charge (Qg): 57 nC or lower

Substitute parts are grouped into two categories based on their electrical characteristics relative to the STP130N10F3:

Category A - Direct Equivalents (100V, 100A+): Parts meeting or exceeding the 120A current rating with 100V Vdss rating. These parts provide equivalent or superior performance across all critical parameters.

Category B - Functional Alternatives (100V, 70A-98A): Parts with 100V Vdss but reduced current ratings between 70A and 98A. These parts are suitable for applications where the full 120A capacity is not required but the voltage rating and package format must be maintained.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Diss. (W)	Status
STP130N10F3	STMicroelectronics	100	120 (Tc)	9.6 @ 60A, 10V	4 @ 250µA	57 @ 10V	250 (Tc)	Obsolete
STP100N10F7	STMicroelectronics	100	80 (Tc)	8 @ 40A, 10V	4.5 @ 250µA	61 @ 10V	150 (Tc)	Active
AOT288L	Alpha & Omega Semiconductor	80	46 (Tc)	9.2 @ 20A, 10V	3.4 @ 250µA	38 @ 10V	93.5 (Tc)	Active
AOT296L	Alpha & Omega Semiconductor	100	70 (Tc)	10 @ 20A, 10V	3.4 @ 250µA	52 @ 10V	107 (Tc)	Active
CSD19533KCS	Texas Instruments	100	100 (Ta)	10.5 @ 55A, 10V	3.4 @ 250µA	35 @ 10V	188 (Tc)	Active
DMT10H010LCT	Diodes Incorporated	100	98 (Tc)	9.5 @ 13A, 10V	3 @ 250µA	71 @ 10V	139 (Tc)	Active
DMTH10H010LCT	Diodes Incorporated	100	108 (Tc)	9.5 @ 13A, 10V	3.5 @ 250µA	53.7 @ 10V	166 (Tc)	Active
FDP085N10A-F102	onsemi	100	96 (Tc)	8.5 @ 96A, 10V	4 @ 250µA	40 @ 10V	188 (Tc)	Active
FDP090N10	onsemi	100	75 (Tc)	9 @ 75A, 10V	4.5 @ 250µA	116 @ 10V	208 (Tc)	Active
FDP100N10	Fairchild Semiconductor	100	75 (Tc)	10 @ 75A, 10V	4.5 @ 250µA	100 @ 10V	208 (Tc)	Active
IPP083N10N5AKSA1	Infineon Technologies	100	73 (Tc)	8.3 @ 73A, 10V	3.8 @ 49µA	37 @ 10V	100 (Tc)	Active

Engineering Selection Recommendations

Category A - Direct Equivalents (Recommended for 100V, 100A+ Applications):

The DMTH10H010LCT (Diodes Incorporated) provides the closest functional match to the STP130N10F3, with 108A continuous drain current at 25°C, 100V Vdss rating, and 166W power dissipation. This part is active in production and carries ROHS3 compliance. The on-resistance of 9.5 mOhm is comparable to the original specification.

The CSD19533KCS (Texas Instruments NexFET™ series) offers 100A continuous drain current with superior gate charge characteristics (35 nC versus 57 nC), resulting in lower switching losses. This part is active and ROHS3 compliant, with 188W power dissipation capability.

The FDP085N10A-F102 (onsemi PowerTrench® series) delivers 96A continuous drain current with 8.5 mOhm on-resistance and 188W power dissipation. This part is active and ROHS3 compliant.

Category B - Functional Alternatives (For Reduced Current Applications):

The STP100N10F7 (STMicroelectronics) is an active part from the same manufacturer family, rated for 80A continuous drain current with 100V Vdss. This part is suitable for applications requiring lower current capacity while maintaining the same voltage rating and package format.

The FDP090N10 (onsemi PowerTrench® series) provides 75A continuous drain current with 100V Vdss and 208W power dissipation. This part is active and ROHS3 compliant.

Compliance and Certification:

All recommended substitute parts carry ROHS3 compliance and REACH Unaffected status, matching the regulatory requirements of the original STP130N10F3. All parts operate across the -55°C to 175°C temperature range. All substitute parts are available in active production status, ensuring long-term supply availability.

Frequently Asked Questions (FAQ)

Q: Can the STP100N10F7 directly replace the STP130N10F3?

A: The STP100N10F7 is a direct package and voltage equivalent but with reduced current capacity (80A versus 120A). It is suitable for applications where the full 120A rating is not required. Both parts share the same 100V Vdss rating, TO-220-3 package, and -55°C to 175°C operating temperature range. The STP100N10F7 is active in production, whereas the STP130N10F3 is obsolete.

Q: What is the difference between Category A and Category B substitutes?

A: Category A substitutes (DMTH10H010LCT, CSD19533KCS, FDP085N10A-F102) meet or exceed the 100A continuous drain current specification of the STP130N10F3 and are suitable for applications requiring the full current capacity. Category B substitutes (STP100N10F7, FDP090N10) provide 75A to 80A current capacity and are appropriate for applications where lower current ratings are acceptable. All parts maintain the 100V Vdss rating and TO-220-3 package format.

Q: Why is the AOT288L not recommended as a direct substitute?

A: The AOT288L has an 80V Vdss rating, which is lower than the 100V requirement of the STP130N10F3. While it provides 46A continuous drain current, the reduced voltage rating makes it unsuitable for applications requiring the full 100V specification. This part is listed for reference only and should not be used in circuits designed for 100V operation.

Q: Are all substitute parts ROHS3 compliant?

A: All recommended substitute parts carry ROHS3 compliance certification. The STP130N10F3 original part is also ROHS3 compliant. All substitute parts maintain REACH Unaffected status, matching the regulatory profile of the original component.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge affects switching speed and driver circuit requirements. The STP130N10F3 specifies 57 nC at 10V. Substitute parts with lower gate charge (such as CSD19533KCS at 35 nC) result in faster switching transitions and lower driver power dissipation. Parts with higher gate charge (such as FDP090N10 at 116 nC) require more driver current but may offer other performance advantages. Gate charge selection depends on the specific application's switching frequency and driver capabilities.

Q: Can I use a substitute part with lower on-resistance (Rds On)?

A: Yes. Lower on-resistance reduces conduction losses and heat generation. The STP130N10F3 specifies 9.6 mOhm at 60A, 10V. Substitute parts with equal or lower on-resistance (such as FDP085N10A-F102 at 8.5 mOhm) provide improved efficiency. Parts with slightly higher on-resistance (such as CSD19533KCS at 10.5 mOhm) are still acceptable for most applications and may offer other advantages such as lower gate charge or higher current capacity.

Q: What is the difference between Ta and Tc current ratings?

A: Ta (ambient temperature) and Tc (case temperature) represent different measurement conditions. Tc ratings are typically higher and represent the continuous drain current capability when the device case temperature is maintained at 25°C. Ta ratings are lower and represent continuous current under ambient temperature conditions. Substitute parts using Tc ratings (such as DMTH10H010LCT at 108A Tc) provide higher current capacity under controlled thermal conditions. When comparing parts, use the same temperature condition basis for accurate equivalence assessment.

Q: Is the TO-220-3 package format consistent across all substitutes?

A: Yes. All recommended substitute parts use the TO-220-3 through-hole package format, ensuring mechanical and thermal compatibility with the original STP130N10F3. This package format is standard across all listed alternatives and maintains identical pin configuration and mounting requirements.

Q: What should I consider when selecting between multiple Category A substitutes?

A: Selection among Category A substitutes should be based on application-specific requirements: (1) Current capacity needs—DMTH10H010LCT provides 108A, CSD19533KCS provides 100A, and FDP085N10A-F102 provides 96A; (2) Switching characteristics—CSD19533KCS has the lowest gate charge (35 nC) for fastest switching; (3) Power dissipation budget—CSD19533KCS and FDP085N10A-F102 both provide 188W capability; (4) Thermal management—lower on-resistance reduces heat generation; (5) Supply chain availability and lead time from preferred distributors.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message