STP12NK80Z Equivalent & Substitute Parts

Part Overview

The STP12NK80Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 800V drain-to-source voltage with 10.5A continuous drain current at 25°C. This device is part of the SuperMESH™ series and is housed in a TO-220-3 package for through-hole mounting applications. The part is marked as "Not For New Designs," indicating it has been superseded in the product lifecycle. Finding equivalent or substitute parts is necessary for applications requiring continued supply, design flexibility, or alternative packaging options while maintaining electrical performance specifications.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	10.5	A
On-State Resistance (Rds On) @ 5.25A, 10V	750	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	4.5	V
Gate Charge (Qg) @ 10V	87	nC
Power Dissipation (Max)	190	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the STP12NK80Z is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 800V
Continuous Drain Current (Id): Must equal or exceed 10.5A at 25°C
On-State Resistance (Rds On): Must not exceed 750mOhm at the specified gate voltage
Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
Operating Temperature Range: Must span -55°C to 150°C
FET Type: N-Channel MOSFET technology
Mounting Type: Through Hole

Parametric Equivalent: Parts meeting all electrical specifications with identical performance characteristics but different package types (TO-247-3) are classified as parametric equivalents.

Similar Parts: Parts with the same voltage rating (800V) but reduced current ratings (6A to 8A) or lower voltage ratings (600V) are classified as similar parts. These may be used in applications with reduced current requirements or lower voltage stress, but do not provide full electrical equivalence.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg @ 10V (nC)	Power Dissipation (W)	Package	Product Status
STP12NK80Z	STMicroelectronics	800	10.5	750	87	190	TO-220-3	Not For New Designs
STW12NK80Z	STMicroelectronics	800	10.5	750	87	190	TO-247-3	Active
SPP11N80C3XKSA1	Infineon Technologies	800	11	450	85	156	TO-220-3	Active
SPP08N80C3XKSA1	Infineon Technologies	800	8	650	60	104	TO-220-3	Active
SPP06N80C3XKSA1	Infineon Technologies	800	6	900	41	83	TO-220-3	Active
FCP850N80Z	onsemi	800	8	850	29	136	TO-220-3	Not For New Designs
AOT10N60	Alpha & Omega Semiconductor Inc.	600	10	750	40	250	TO-220-3	Not For New Designs
AOT10N60L	Alpha & Omega Semiconductor Inc.	600	10	750	40	250	TO-220-3	Active

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

The STW12NK80Z is the recommended parametric equivalent for the STP12NK80Z. Both devices are manufactured by STMicroelectronics and share identical electrical specifications: 800V Vdss, 10.5A continuous drain current, 750mOhm Rds On, and 190W power dissipation. The primary difference is the package type: STW12NK80Z uses TO-247-3 instead of TO-220-3. The STW12NK80Z holds Active product status, making it suitable for new designs. Selection of this part requires verification of PCB layout compatibility with the TO-247-3 package footprint.

Active Alternatives with 800V Rating:

The SPP11N80C3XKSA1 (Infineon Technologies, CoolMOS™ series) exceeds the STP12NK80Z specifications with 11A continuous drain current and superior on-state resistance of 450mOhm at 7.1A, 10V. This part is Active and maintains the TO-220-3 package. The SPP08N80C3XKSA1 and SPP06N80C3XKSA1 provide reduced current ratings (8A and 6A respectively) and are suitable only for applications with lower current requirements.

Lower Voltage Alternatives:

The AOT10N60L (Alpha & Omega Semiconductor Inc.) operates at 600V Vdss with 10A continuous drain current and is Active. This part is suitable only for applications where the 800V voltage rating is not required. The AOT10N60 shares identical electrical specifications but is marked Not For New Designs.

Compliance and Certification:

All listed parts maintain RoHS3 compliance and REACH Unaffected status, consistent with the STP12NK80Z. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all STMicroelectronics and Infineon parts, indicating no moisture sensitivity constraints.

Frequently Asked Questions (FAQ)

Q: Can the STW12NK80Z directly replace the STP12NK80Z in existing designs?

A: The STW12NK80Z is electrically equivalent to the STP12NK80Z with identical performance specifications. However, the package differs: STW12NK80Z uses TO-247-3 while STP12NK80Z uses TO-220-3. Direct replacement requires PCB redesign to accommodate the different pin configuration and footprint of the TO-247-3 package. The TO-247-3 package typically offers improved thermal performance due to larger lead frame geometry.

Q: Is the SPP11N80C3XKSA1 a suitable replacement for the STP12NK80Z?

A: The SPP11N80C3XKSA1 exceeds the electrical requirements of the STP12NK80Z in all critical parameters: 11A versus 10.5A drain current, and 450mOhm versus 750mOhm on-state resistance. Both maintain 800V Vdss and TO-220-3 packaging. The SPP11N80C3XKSA1 is Active and suitable for new designs. Substitution is valid for applications requiring equal or greater performance. Gate threshold voltage differs slightly (3.9V versus 4.5V), which may require driver circuit verification.

Q: Can I use the AOT10N60L as a substitute for the STP12NK80Z?

A: The AOT10N60L is not a direct substitute. While it maintains the same continuous drain current (10A) and on-state resistance (750mOhm), the drain-to-source voltage is reduced to 600V. Substitution is valid only for applications where the maximum operating voltage does not exceed 600V. Using this part in circuits designed for 800V operation will result in device failure.

Q: What is the difference between the FCP850N80Z and the STP12NK80Z?

A: The FCP850N80Z (onsemi, SuperFET® II series) operates at 800V but with reduced continuous drain current (8A versus 10.5A) and higher on-state resistance (850mOhm versus 750mOhm). Power dissipation is lower at 136W versus 190W. This part is suitable only for applications with current requirements not exceeding 8A. The FCP850N80Z is marked Not For New Designs.

Q: Are there any thermal considerations when selecting a substitute?

A: Power dissipation ratings differ among substitutes. The STP12NK80Z is rated for 190W, while the SPP11N80C3XKSA1 is rated for 156W and the SPP08N80C3XKSA1 for 104W. Lower power dissipation ratings indicate reduced thermal performance. Thermal design calculations must account for the specific power dissipation rating of the selected part. The TO-247-3 package (STW12NK80Z) typically provides superior thermal performance compared to TO-220-3 due to larger lead frame area.

Q: Do all substitute parts have the same gate drive requirements?

A: Gate threshold voltage (Vgs(th)) varies among substitutes. The STP12NK80Z specifies 4.5V at 100µA, while Infineon CoolMOS™ parts specify 3.9V at higher current levels (250µA to 680µA). These differences may require adjustment of gate driver circuits to ensure proper switching performance. Verify gate drive voltage compatibility with the selected substitute part.

Q: What is the significance of the "Not For New Designs" status?

A: Parts marked "Not For New Designs" indicate that the manufacturer has discontinued active development and recommends using alternative parts for new applications. The STP12NK80Z and FCP850N80Z carry this designation. However, these parts remain available in inventory and may be used for legacy system maintenance or repair. For new designs, select parts with Active status such as STW12NK80Z or SPP11N80C3XKSA1.

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