STP12N60M2 Equivalent & Substitute Parts

Part Overview

The STP12N60M2 is an N-Channel 600V 9A MOSFET manufactured by STMicroelectronics in the MDmesh™ M2 series. This through-hole TO-220 device is rated for 85W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently in active production status with 1110 units in stock.

Equivalent and substitute parts are identified when applications require alternative sourcing due to inventory constraints, supply chain considerations, or when design specifications allow for components with comparable electrical and mechanical characteristics within defined tolerance ranges.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	9	A
Power Dissipation (Max)	85	W
Rds On (Max) @ 4.5A, 10V	450	mOhm
Gate Charge (Qg) @ 10V	16	nC
Input Capacitance (Ciss) @ 100V	538	pF
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	TO-220
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution eligibility for the STP12N60M2 is determined by the following critical parameters:

Voltage Rating (Vdss): Substitute parts must maintain a Vdss rating equal to or greater than 600V to ensure safe operation in the same circuit topology.

Current Rating (Id): Substitute parts with continuous drain current ratings of 7A or higher are considered functionally equivalent for most applications, as they meet or exceed the primary current handling requirement.

Power Dissipation: Parts rated for 83W or higher power dissipation provide thermal equivalence.

Package Type: All substitutes must use through-hole TO-220 or TO-220-3 packaging to ensure mechanical and thermal interface compatibility.

Operating Temperature Range: All substitutes must support the full -55°C to 150°C operating range.

Drive Voltage: All substitutes operate at 10V gate drive voltage, ensuring gate driver compatibility.

The following parts meet these substitution criteria:

FCP600N60Z (Fairchild Semiconductor): 600V, 7.4A, 89W, TO-220-3
FCP7N60 (onsemi): 600V, 7A, 83W, TO-220-3
IXTP8N65X2M (IXYS): 650V, 4A, 32W, TO-220
IXTP8N70X2 (IXYS): 700V, 8A, 150W, TO-220-3
IXTP8N70X2M (IXYS): 700V, 4A, 32W, TO-220 Isolated Tab

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Dissipation (W)	Package	Status
STP12N60M2	STMicroelectronics	600	9	450 @ 4.5A	16 @ 10V	85	TO-220	Active
FCP600N60Z	Fairchild Semiconductor	600	7.4	600 @ 3.7A	26 @ 10V	89	TO-220-3	Active
FCP7N60	onsemi	600	7	600 @ 3.5A	30 @ 10V	83	TO-220-3	Not For New Designs
IXTP8N65X2M	IXYS	650	4	550 @ 4A	12 @ 10V	32	TO-220	Active
IXTP8N70X2	IXYS	700	8	500 @ 500mA	12 @ 10V	150	TO-220-3	Active
IXTP8N70X2M	IXYS	700	4	550 @ 500mA	12 @ 10V	32	TO-220 Isolated Tab	Active

Engineering Selection Recommendations

Primary Substitutes (Active Status, Recommended for New Designs):

FCP600N60Z is the closest electrical equivalent, maintaining identical 600V voltage rating and comparable 7.4A current rating. This part is in active production status and suitable for direct substitution in applications where the 9A rating of the STP12N60M2 can be derated to 7.4A. The higher Rds On (600mOhm vs. 450mOhm) results in increased conduction losses and requires thermal analysis for power-dissipation-critical applications.

IXTP8N70X2 provides superior voltage headroom at 700V and matches the 8A current rating closely. The 150W power dissipation rating exceeds the STP12N60M2 specification, making this part suitable for applications requiring thermal margin. This part is in active production status.

Secondary Substitutes (Limited Application Scope):

FCP7N60 maintains 600V voltage rating but is designated "Not For New Designs" by onsemi. This part is suitable only for legacy system maintenance or replacement scenarios where design freeze conditions apply.

IXTP8N65X2M and IXTP8N70X2M are rated for only 4A continuous drain current, significantly below the STP12N60M2 specification. These parts are suitable only for applications where the actual circuit current requirement does not exceed 4A, despite the STP12N60M2 being specified for 9A.

Compliance Considerations:

All substitute parts listed are RoHS3 compliant, REACH unaffected, and classified under ECCN EAR99. All support the full -55°C to 150°C operating temperature range required by the main part.

Frequently Asked Questions (FAQ)

Q: Can FCP600N60Z directly replace STP12N60M2 in all applications?

A: FCP600N60Z is electrically compatible at the 600V voltage level but has a lower continuous drain current rating (7.4A vs. 9A). Direct substitution is valid only when the actual circuit current does not exceed 7.4A. The higher Rds On value (600mOhm vs. 450mOhm) increases conduction losses and requires thermal verification.

Q: What is the significance of the TO-220 versus TO-220-3 package difference?

A: Both packages are through-hole mounted and mechanally compatible with standard TO-220 footprints. The primary difference is pin configuration. TO-220-3 is the standard three-pin configuration (Gate, Drain, Source). Thermal performance and mounting interface are equivalent between these variants.

Q: Why are IXTP8N65X2M and IXTP8N70X2M listed as substitutes if they only support 4A?

A: These parts are listed as substitutes for applications where the actual circuit current requirement is 4A or lower, despite the STP12N60M2 being rated for 9A. They are not suitable for applications requiring the full 9A capability.

Q: Is FCP7N60 suitable for new product designs?

A: FCP7N60 is designated "Not For New Designs" by onsemi. This part is appropriate only for replacement or maintenance of existing systems. New designs should use FCP600N60Z or IXTP8N70X2 as alternatives.

Q: How does gate charge (Qg) affect substitution decisions?

A: Gate charge determines the energy required to switch the MOSFET on and off. The STP12N60M2 has a Qg of 16nC, while substitutes range from 12nC to 30nC. Lower gate charge reduces switching losses and gate driver power requirements. Higher gate charge increases switching losses but does not prevent substitution if the gate driver can supply the required charge.

Q: What thermal considerations apply when substituting with higher Rds On values?

A: Rds On directly affects conduction losses (P = I²R). FCP600N60Z has 600mOhm Rds On compared to 450mOhm for STP12N60M2. At 7A, this results in approximately 29.4W vs. 22W conduction loss. Thermal analysis must confirm that the heatsink and PCB thermal design can accommodate the increased dissipation.

Q: Are all listed substitutes RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant and REACH unaffected, matching the compliance status of the STP12N60M2.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message