STP110N8F6 N-Channel MOSFET 80V 110A TO-220 Equivalent & Substitute Parts

Part Overview

The STP110N8F6 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 80V drain-to-source voltage with 110A continuous drain current at 25°C. This device is packaged in a through-hole TO-220-3 configuration and is part of the STripFET™ F6 series. The part is currently in Last Time Buy status, indicating end-of-life production. Equivalent and substitute parts are necessary to maintain design continuity and ensure long-term component availability for new production runs and field replacements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	80	V
Continuous Drain Current (Id) @ 25°C	110	A (Tc)
On-State Resistance (Rds On Max) @ 55A, 10V	6.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	V
Gate Charge (Qg) @ 10V	150	nC
Power Dissipation (Max)	200	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STP110N8F6 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must be equal to or greater than 80V
Continuous Drain Current (Id): Must be equal to or greater than 110A at 25°C
Package Type: Must be TO-220-3 through-hole configuration
Gate Drive Voltage: Compatible with 10V drive voltage
Operating Temperature Range: Must support -55°C to 175°C
RoHS and REACH Compliance: Must maintain ROHS3 compliance

Substitution Categories:

Category 1 – STMicroelectronics Direct Alternatives (Same Series): Parts STP100N8F6 and STP140N8F7 share identical voltage ratings (80V Vdss) and package configuration. These devices maintain the same thermal and electrical operating envelope with variations in current rating and on-state resistance characteristics.

Category 2 – Cross-Manufacturer Equivalents (80V Rating): Parts PSMN6R5-80PS,127 (Nexperia), AOT286L (Alpha & Omega), and similar devices maintain the 80V Vdss specification with comparable current handling and TO-220 packaging, though with different thermal and gate charge characteristics.

Category 3 – Higher Voltage Alternatives (100V Rating): Parts CSD19531KCS (Texas Instruments), FDP054N10 (onsemi), IPP072N10N3GXKSA1 (Infineon), and TSM160N10CZ C0G (Taiwan Semiconductor) operate at 100V Vdss, providing voltage margin above the original specification while maintaining or exceeding current ratings and TO-220 packaging.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg @ 10V (nC)	Power Dissipation (W)	Package	Status
STP110N8F6	STMicroelectronics	80	110 (Tc)	6.5 @ 55A	150	200	TO-220-3	Last Time Buy
STP100N8F6	STMicroelectronics	80	100 (Tc)	9 @ 50A	100	176	TO-220-3	Active
STP140N8F7	STMicroelectronics	80	90 (Tc)	4.3 @ 45A	96	200	TO-220-3	Active
PSMN6R5-80PS,127	Nexperia USA Inc.	80	100 (Tc)	6.9 @ 15A	71	210	TO-220-3	Obsolete
AOT286L	Alpha & Omega Semiconductor	80	70 (Tc)	6 @ 20A	63	167	TO-220-3	Active
CSD19531KCS	Texas Instruments	100	100 (Ta)	7.7 @ 60A	38	214	TO-220-3	Active
FDP054N10	onsemi	100	120 (Tc)	5.5 @ 75A	203	263	TO-220-3	Active
IPP072N10N3GXKSA1	Infineon Technologies	100	80 (Tc)	7.2 @ 80A	68	150	TO-220-3	Active
TSM160N10CZ C0G	Taiwan Semiconductor Corporation	100	160 (Tc)	5.5 @ 30A	154	300	TO-220-3	Obsolete

Engineering Selection Recommendations

For Direct Replacement (80V Vdss Requirement):

STP100N8F6 and STP140N8F7 are active STMicroelectronics products suitable for applications where the original 80V specification must be maintained. STP100N8F6 provides reduced current capability (100A vs. 110A) with higher on-state resistance, making it appropriate for designs with lower current demands. STP140N8F7 offers improved on-state resistance (4.3 mOhm) at the cost of lower current rating (90A), suitable for efficiency-critical applications. Both maintain ROHS3 compliance and identical operating temperature range.

PSMN6R5-80PS,127 from Nexperia provides 80V operation with 100A rating and superior gate charge characteristics (71 nC), but carries Obsolete product status, limiting long-term availability.

AOT286L from Alpha & Omega Semiconductor operates at 80V with 70A continuous current rating and is actively produced. This part is suitable only for applications with current requirements below 70A.

For Voltage-Margin Applications (100V Vdss):

CSD19531KCS (Texas Instruments NexFET™ series) provides 100V operation with 100A rating and significantly reduced gate charge (38 nC), enabling faster switching. This part is actively produced and ROHS3 compliant.

FDP054N10 (onsemi PowerTrench® series) offers 100V operation with 120A rating, exceeding the original current specification. Higher gate charge (203 nC) requires consideration in gate drive circuit design. Actively produced with ROHS3 compliance.

IPP072N10N3GXKSA1 (Infineon OptiMOS™ series) provides 100V operation with 80A rating and moderate gate charge (68 nC). Actively produced with ROHS3 compliance and unlimited moisture sensitivity level.

TSM160N10CZ C0G from Taiwan Semiconductor offers 100V operation with 160A rating and 300W power dissipation, but carries Obsolete product status.

Compliance and Availability:

All recommended active substitutes maintain ROHS3 compliance and REACH Unaffected status. Parts with Active product status (STP100N8F6, STP140N8F7, PSMN6R5-80PS,127, AOT286L, CSD19531KCS, FDP054N10, IPP072N10N3GXKSA1) provide superior long-term availability compared to Last Time Buy and Obsolete designations.

Frequently Asked Questions (FAQ)

Q: Can STP100N8F6 directly replace STP110N8F6 in all applications?

A: STP100N8F6 is suitable only for applications where continuous drain current does not exceed 100A at 25°C. The higher on-state resistance (9 mOhm vs. 6.5 mOhm) results in increased power dissipation. Thermal analysis is required to confirm adequate heat dissipation at the reduced power rating (176W vs. 200W).

Q: What is the advantage of using 100V-rated devices as substitutes for the 80V STP110N8F6?

A: 100V-rated MOSFETs provide voltage margin in applications subject to transient overvoltage conditions. Devices such as CSD19531KCS, FDP054N10, and IPP072N10N3GXKSA1 maintain or exceed the original current rating while offering improved reliability in systems with voltage spikes. Gate charge and on-state resistance characteristics differ and must be evaluated for specific circuit requirements.

Q: Are surface-mount alternatives available for the STP110N8F6?

A: AOB286L is available in TO-263 (D2PAK) surface-mount packaging with 70A continuous current rating at 80V. This part is not a direct current replacement but serves applications with reduced current requirements and surface-mount assembly requirements.

Q: What is the significance of gate charge (Qg) differences among substitute parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (e.g., CSD19531KCS at 38 nC) reduces gate drive power and enables faster switching. Higher gate charge (e.g., FDP054N10 at 203 nC) requires more robust gate drive circuitry. Gate drive circuit design must accommodate the selected device's gate charge specification.

Q: Can obsolete parts such as PSMN6R5-80PS,127 and TSM160N10CZ C0G be used in new designs?

A: Obsolete parts carry risk of supply discontinuation and should not be selected for new production designs. These parts are listed for reference in legacy system maintenance and field replacement scenarios only. Active alternatives with equivalent or superior specifications are available.

Q: How do on-state resistance variations affect circuit performance?

A: On-state resistance (Rds On) directly determines conduction losses and heat generation. Lower Rds On (e.g., STP140N8F7 at 4.3 mOhm) reduces power dissipation and improves efficiency. Higher Rds On (e.g., STP100N8F6 at 9 mOhm) increases losses. Thermal design and circuit efficiency calculations must account for the selected device's Rds On specification.

Q: Are all substitute parts compatible with ±20V gate voltage specification?

A: All listed substitute parts support ±20V maximum gate voltage, matching the original STP110N8F6 specification. Gate threshold voltage (Vgs(th)) varies between 3.3V and 4.5V across substitutes, affecting minimum gate drive voltage requirements. Gate drive circuits must be verified to provide adequate voltage margin above the selected device's threshold voltage.

Q: What packaging considerations apply when selecting substitutes?

A: The STP110N8F6 uses TO-220-3 through-hole packaging. All recommended 80V and 100V substitutes maintain TO-220-3 compatibility, ensuring mechanical and thermal interface compatibility. AOB286L uses TO-263 (D2PAK) surface-mount packaging and requires different PCB layout and assembly processes.

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