STP100N6F7 Equivalent & Substitute Parts

Part Overview

The STP100N6F7 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 60V drain-to-source voltage and 100A continuous drain current at 25°C. This device is part of the STripFET™ F7 series and is housed in a TO-220-3 through-hole package. The component is Active in product status and RoHS3 compliant.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, and thermal performance. Substitute components must maintain compatibility with the TO-220-3 package format and operate within the specified temperature range.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Current - Continuous Drain (Id) @ 25°C	100	A (Tc)
Rds On (Max) @ Id, Vgs	5.6	mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30	nC @ 10V
Power Dissipation (Max)	125	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the STP100N6F7 is determined by the following critical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 60V minimum
Continuous Drain Current (Id): 100A or greater at 25°C
Package Type: TO-220-3 through-hole configuration
Operating Temperature Range: -55°C to 175°C or equivalent

Secondary Compatibility Factors:

On-Resistance (Rds On): Lower or equivalent values ensure thermal performance
Gate Charge (Qg): Affects switching speed and drive circuit requirements
Power Dissipation: Must support thermal load in application
Vgs(th) and Vgs(Max): Gate drive voltage compatibility

Substitute parts are grouped into two categories based on electrical performance alignment:

Category A - Direct Electrical Equivalents: Parts meeting or exceeding all primary criteria with comparable on-resistance and thermal characteristics (DMT6005LCT, DMTH6010SCT).

Category B - Functional Alternatives: Parts meeting primary voltage and current criteria with acceptable performance trade-offs in on-resistance or gate charge characteristics (DMT6010SCT, FDP070AN06A0, FDP5800, IXTP110N055T2).

Parameter Comparison

Parameter	STP100N6F7	DMT6005LCT	DMT6010SCT	DMTH6010SCT	FDP070AN06A0	FDP5800	IXTP110N055T2
Manufacturer	STMicroelectronics	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Fairchild Semiconductor	onsemi	IXYS
Vdss (V)	60	60	60	60	60	60	55
Id @ 25°C (A)	100 (Tc)	100 (Tc)	98 (Tc)	100 (Tc)	80 (Tc)	80 (Tc)	110 (Tc)
Rds On (Max) @ 10V (mOhm)	5.6 @ 50A	6 @ 20A	7.2 @ 20A	7.2 @ 20A	7 @ 80A	6 @ 80A	6.6 @ 25A
Vgs(th) (Max) @ 250µA (V)	4	3	4	4	4	2.5	4
Gate Charge (Qg) @ 10V (nC)	30	47.1	36.3	36.3	66	145	57
Power Dissipation (Max) (W)	125 (Tc)	104 (Tc)	104 (Tc)	125 (Tc)	175 (Tc)	242 (Tc)	180 (Tc)
Operating Temperature (°C)	-55 to 175	-55 to 150	-55 to 150	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not Specified	ROHS3 Compliant	ROHS3 Compliant
Automotive Grade	No	Yes (AEC-Q101)	No	Yes (AEC-Q101)	No	No	No

Engineering Selection Recommendations

DMTH6010SCT (Diodes Incorporated) is the closest functional equivalent to the STP100N6F7. This device matches the 60V voltage rating, 100A continuous drain current, 125W power dissipation, and -55°C to 175°C operating temperature range. The DMTH6010SCT carries AEC-Q101 automotive qualification and RoHS3 compliance. The slightly higher on-resistance (7.2 mOhm vs. 5.6 mOhm) is acceptable for most applications. This part is recommended as the primary substitute when STP100N6F7 availability is limited.

DMT6005LCT (Diodes Incorporated) provides equivalent 60V/100A ratings with lower on-resistance (6 mOhm) and comparable gate charge (47.1 nC). This device includes AEC-Q101 automotive qualification. The operating temperature maximum is 150°C, which is 25°C lower than the STP100N6F7. This limitation restricts use in high-temperature applications but is suitable for standard industrial and automotive environments.

IXTP110N055T2 (IXYS) offers 110A continuous drain current and 180W power dissipation with favorable on-resistance (6.6 mOhm). The Vdss rating is 55V, which is 5V lower than the STP100N6F7. This device is suitable for applications where the 60V rating margin is not critical. Full -55°C to 175°C temperature range is supported.

FDP070AN06A0 (Fairchild Semiconductor) and FDP5800 (onsemi) both provide 80A continuous drain current at 25°C, which is 20A below the STP100N6F7 specification. These devices are suitable only for applications with reduced current requirements. FDP5800 offers superior power dissipation (242W) and lower on-resistance (6 mOhm) but exhibits significantly higher gate charge (145 nC), requiring higher drive current.

DMT6010SCT (Diodes Incorporated) provides 98A continuous drain current, slightly below the 100A specification. On-resistance is 7.2 mOhm. Operating temperature range is limited to 150°C. This device is acceptable for applications with marginal current headroom.

All recommended substitutes maintain TO-220-3 package compatibility and RoHS3 compliance. Selection should prioritize application-specific requirements for operating temperature range, on-resistance thermal performance, and gate drive circuit capabilities.

Frequently Asked Questions (FAQ)

Q: Can the DMT6005LCT replace the STP100N6F7 in all applications?

A: The DMT6005LCT is electrically compatible for most applications, matching the 60V/100A ratings and providing superior on-resistance (6 mOhm vs. 5.6 mOhm). However, the maximum operating temperature is 150°C compared to 175°C for the STP100N6F7. Applications requiring sustained operation above 150°C junction temperature require the STP100N6F7 or DMTH6010SCT.

Q: What is the significance of the on-resistance (Rds On) difference between substitute parts?

A: On-resistance directly affects power dissipation and thermal performance. Lower on-resistance reduces heat generation at the same current level. The STP100N6F7 specifies 5.6 mOhm at 50A/10V. Substitutes with higher on-resistance (6-7.2 mOhm) generate proportionally more heat and may require thermal management adjustments. For high-current applications near 100A, on-resistance differences become significant.

Q: Is the IXTP110N055T2 suitable as a substitute despite the lower Vdss rating?

A: The IXTP110N055T2 has a 55V Vdss rating versus 60V for the STP100N6F7. This 5V difference reduces the safety margin for voltage transients. Substitution is acceptable only in applications where the maximum drain-source voltage is confirmed to remain below 55V under all operating conditions, including transient events. Applications with 60V supply rails or higher require the full 60V rating.

Q: Why do some substitute parts have higher gate charge (Qg)?

A: Gate charge affects switching speed and drive circuit power requirements. Higher gate charge (e.g., FDP5800 at 145 nC vs. STP100N6F7 at 30 nC) requires longer switching times and higher drive current from the gate driver circuit. This may impact switching frequency capability and increase electromagnetic interference. Applications with fixed gate drive circuits may experience performance degradation with high gate charge devices.

Q: Are automotive-qualified parts (AEC-Q101) required for all applications?

A: AEC-Q101 qualification indicates the device has undergone automotive reliability testing and is suitable for automotive environments. Non-automotive applications do not require this qualification. However, automotive-qualified parts (DMT6005LCT, DMTH6010SCT) provide additional reliability assurance and are recommended for safety-critical or harsh environment applications.

Q: What is the impact of operating temperature range differences?

A: The STP100N6F7 operates to 175°C junction temperature, while some substitutes (DMT6005LCT, DMT6010SCT) are limited to 150°C. This 25°C difference affects thermal design margins. In applications with high ambient temperature or high power dissipation, the lower temperature limit may require additional cooling or derating of current capacity. Verify application thermal requirements before selecting temperature-limited substitutes.

Q: Can multiple substitute parts be used interchangeably in the same design?

A: All substitute parts maintain TO-220-3 package compatibility and identical pinout (Gate, Drain, Source). However, differences in on-resistance, gate charge, and threshold voltage may affect circuit performance. If substituting between different manufacturers or part numbers, verify that gate drive voltage, switching frequency, and thermal management remain within acceptable limits for each specific device.

Q: What packaging considerations apply to these substitute parts?

A: All listed substitutes use the TO-220-3 through-hole package, identical to the STP100N6F7. Pin assignments are standard (Gate, Drain, Source). PCB layout, heatsink mounting, and thermal interface materials are directly compatible. No design modifications are required for package accommodation.

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