STN715 Equivalent & Substitute Parts

Part Overview

The STN715 is an NPN bipolar junction transistor manufactured by STMicroelectronics, designed for general-purpose switching and amplification applications. The device features an 80 V collector-emitter breakdown voltage, 1.5 A maximum collector current, and 1.6 W power dissipation capability in a surface mount SOT-223 package. The STN715 is classified as obsolete, necessitating identification of active equivalent components for new designs and ongoing production requirements. Substitute parts must maintain functional compatibility while meeting current component availability and compliance standards.

Key Parameters

Parameter	STN715 Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	80	V
Current - Collector (Ic) (Max)	1.5	A
Power - Max	1.6	W
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A	—
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 1A, 2V	—
Frequency - Transition	50	MHz
Mounting Type	Surface Mount	—
Package / Case	TO-261-4, TO-261AA	—
Supplier Device Package	SOT-223	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the STN715 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Transistor type must be NPN
Collector-emitter breakdown voltage must be greater than or equal to 80 V
Maximum collector current must be greater than or equal to 1.5 A
Power dissipation capability must be greater than or equal to 1.6 W
Vce saturation characteristics must support the application requirements
DC current gain must be sufficient for circuit operation

Mechanical Compatibility Criteria:

Surface mount mounting type
SOT-223 or compatible package footprint (TO-261-4, TO-261AA)
RoHS3 compliance
MSL rating of 1 (Unlimited)

Substitute parts are grouped into two categories based on their electrical characteristics relative to the STN715:

Category A - Direct Voltage & Current Equivalents (80V, ≥1A): Parts meeting or exceeding the 80 V breakdown voltage and 1.5 A collector current specifications with compatible package and compliance ratings.

Category B - Reduced Current Capability (80V, 1A): Parts with 80 V breakdown voltage but reduced maximum collector current (1 A instead of 1.5 A), suitable for applications not requiring the full 1.5 A capability.

Category C - Voltage Derating (60V or 30V, 1A): Parts with reduced breakdown voltage specifications, applicable only to circuits with lower voltage requirements.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) [A]	Vce(br) [V]	Power [W]	Vce Sat @ Ib, Ic	hFE (Min) @ Ic, Vce	Frequency [MHz]	Package	Status
STN715	STMicroelectronics	1.5	80	1.6	500mV @ 100mA, 1A	40 @ 1A, 2V	50	SOT-223	Obsolete
BCP56-16	ANBON SEMICONDUCTOR	1	80	1.6	500mV @ 50mA, 500mA	100 @ 150mA, 2V	—	SOT-223	Active
BCP5616TA	Diodes Incorporated	1	80	2	500mV @ 50mA, 500mA	100 @ 150mA, 2V	150	SOT-223-3	Active
BCP56TA	Diodes Incorporated	1	80	2	500mV @ 50mA, 500mA	40 @ 150mA, 2V	150	SOT-223-3	Active
BCP68,115	NXP USA Inc.	1	20	1.4	500mV @ 100mA, 1A	85 @ 500mA, 1V	170	SOT-223	Active
BCX56TA	Diodes Incorporated	1	80	1	500mV @ 50mA, 500mA	40 @ 150mA, 2V	150	SOT-89-3	Active
FZT489TA	Diodes Incorporated	1	30	2	600mV @ 200mA, 2A	100 @ 1A, 2V	150	SOT-223-3	Active
FZT491TA	Diodes Incorporated	1	60	2	500mV @ 100mA, 1A	100 @ 500mA, 5V	150	SOT-223-3	Active
FZT493TA	Diodes Incorporated	1	100	2	600mV @ 100mA, 1A	100 @ 250mA, 10V	150	SOT-223-3	Active
FZT653TA	Diodes Incorporated	2	100	2	500mV @ 200mA, 2A	100 @ 500mA, 2V	175	SOT-223-3	Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

BCP5616TA and BCP56TA are the preferred substitutes for the STN715. Both devices are manufactured by Diodes Incorporated and maintain active product status. These parts feature 80 V collector-emitter breakdown voltage matching the STN715 specification, operate at 1 A maximum collector current, and provide enhanced power dissipation (2 W versus 1.6 W). The transition frequency of 150 MHz exceeds the STN715 specification of 50 MHz, providing improved high-frequency performance. Both parts are RoHS3 compliant with MSL rating of 1 (Unlimited) and operate across the temperature range of -55°C to 150°C. The SOT-223-3 package is mechanically compatible with the original SOT-223 footprint. BCP56TA matches the DC current gain specification of the STN715 (40 @ 150mA, 2V), while BCP5616TA provides higher current gain (100 @ 150mA, 2V).

Secondary Substitutes (Conditional Application):

FZT493TA is suitable for applications requiring higher voltage capability. This part provides 100 V collector-emitter breakdown voltage, exceeding the STN715 specification, with 1 A maximum collector current and 2 W power dissipation. The 150 MHz transition frequency and active product status support modern circuit requirements.

FZT491TA is applicable for circuits operating at reduced voltage levels (60 V maximum). This part maintains 1 A collector current and 2 W power dissipation with 150 MHz transition frequency.

Not Recommended:

BCP68,115 features only 20 V collector-emitter breakdown voltage, making it unsuitable for circuits designed for 80 V operation. This part is not recommended as a substitute for the STN715.

BCX56TA uses a different package format (SOT-89-3 versus SOT-223), requiring PCB layout modifications. While electrically compatible at 80 V and 1 A, the package change introduces design complexity.

BCP56-16 is manufactured by ANBON SEMICONDUCTOR and provides 80 V and 1 A specifications with 1.6 W power dissipation. However, transition frequency is not specified, limiting assessment of high-frequency performance.

FZT489TA operates at only 30 V maximum breakdown voltage and is not suitable for 80 V applications.

FZT653TA provides 2 A maximum collector current, exceeding the STN715 specification. While this part is electrically compatible, the higher current rating introduces unnecessary cost and thermal considerations for applications requiring only 1.5 A.

Frequently Asked Questions (FAQ)

Q: Can BCP5616TA directly replace STN715 in existing designs?

A: BCP5616TA is electrically compatible with the STN715 for circuits operating at or below 1 A collector current. The 80 V breakdown voltage matches the original specification. The SOT-223-3 package footprint is compatible with the original SOT-223 layout. Verification of DC current gain requirements is necessary, as BCP5616TA provides 100 @ 150mA, 2V compared to STN715 at 40 @ 1A, 2V.

Q: What is the difference between BCP56TA and BCP5616TA?

A: Both parts are manufactured by Diodes Incorporated and feature identical electrical specifications: 80 V breakdown voltage, 1 A maximum collector current, 2 W power dissipation, and 150 MHz transition frequency. The primary difference is DC current gain: BCP56TA provides 40 @ 150mA, 2V (matching STN715), while BCP5616TA provides 100 @ 150mA, 2V. Selection depends on circuit bias requirements and gain specifications.

Q: Why is FZT493TA not recommended as a primary substitute despite higher voltage rating?

A: FZT493TA provides 100 V breakdown voltage, exceeding the STN715 specification of 80 V. While this higher rating provides additional design margin, the part is not necessary for circuits designed to operate at 80 V. The 100 V rating introduces unnecessary cost without functional benefit for the intended application.

Q: Can BCX56TA be used as a substitute despite the different package?

A: BCX56TA is electrically compatible with the STN715 at 80 V and 1 A specifications. However, the SOT-89-3 package differs from the original SOT-223 package, requiring PCB layout modifications and potential assembly process changes. Package conversion introduces design risk and is not recommended unless specific design constraints necessitate the SOT-89-3 format.

Q: What compliance certifications apply to all recommended substitutes?

A: All recommended substitute parts (BCP5616TA, BCP56TA, FZT493TA, and FZT491TA) are RoHS3 compliant and carry REACH Unaffected status. Moisture sensitivity level is rated at 1 (Unlimited) for all parts, matching the STN715 specification. These certifications ensure compatibility with current manufacturing and environmental regulations.

Q: Is BCP68,115 suitable for any application where STN715 was used?

A: BCP68,115 is not suitable as a substitute for the STN715. The 20 V maximum breakdown voltage is insufficient for circuits designed to operate at 80 V. Using this part in an 80 V circuit would result in device failure. This part is applicable only to circuits with maximum operating voltages of 20 V or less.

Q: How does transition frequency affect substitution decisions?

A: The STN715 specifies 50 MHz transition frequency. All recommended substitutes provide 150 MHz or higher transition frequency, enabling improved high-frequency performance. Higher transition frequency does not compromise low-frequency operation and provides additional design margin for signal integrity. Transition frequency is not a limiting factor in substitution decisions.

Q: What is the impact of reduced collector current in substitute parts?

A: Most substitute parts provide 1 A maximum collector current compared to the STN715 at 1.5 A. This reduction is acceptable for applications requiring 1 A or less. Circuits designed to operate at the full 1.5 A specification require either FZT653TA (2 A capability) or retention of the original STN715 if available. Current derating should be verified against circuit requirements before substitution.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message