STN3PF06 Equivalent & Substitute Parts

Part Overview

The STN3PF06 is a P-Channel 60V 2.5A MOSFET manufactured by STMicroelectronics in the STripFET™ II series, housed in a SOT-223 surface mount package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. The part operates across a temperature range of -65°C to 150°C and is RoHS3 compliant with unlimited moisture sensitivity rating.

Substiute Parts

STN3PF06
STMicroelectronicsIn Stock: 17242STN3PF06 Datasheet
STN3PF06
Current Part
DMP6250SE-13
Diodes IncorporatedIn Stock: 23549DMP6250SE-13 Datasheet
DMP6250SE-13
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NDT2955
onsemiIn Stock: 41150NDT2955 Datasheet
NDT2955
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NTF2955T1G
onsemiIn Stock: 44325NTF2955T1G Datasheet
NTF2955T1G
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NVF2955T1G
onsemiIn Stock: 57462NVF2955T1G Datasheet
NVF2955T1G
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Key Parameters

Parameter STN3PF06 Specification
Manufacturer STMicroelectronics
FET Type P-Channel
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 2.5A (Tc)
Rds On (Max) @ Id, Vgs 220mOhm @ 1.5A, 10V
Gate Threshold Voltage Vgs(th) (Max) 4V @ 250µA
Gate Charge (Qg) (Max) 21 nC @ 10V
Input Capacitance (Ciss) (Max) 850 pF @ 25V
Power Dissipation (Max) 2.5W (Tc)
Operating Temperature Range -65°C ~ 150°C (TJ)
Package Type SOT-223 (TO-261-4, TO-261AA)
Product Status Obsolete
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the STN3PF06 is determined by strict alignment of the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

  • FET Type: P-Channel configuration
  • Drain to Source Voltage (Vdss): 60V rating
  • Package Type: SOT-223 surface mount (TO-261-4, TO-261AA case)
  • Continuous Drain Current (Id): Minimum 2.5A capability
  • Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
  • Maximum Gate Voltage (Vgs): ±20V
  • RoHS3 Compliance and MSL Level 1 rating

Electrical Performance Considerations: Substitute parts must maintain compatibility within the specified voltage and current operating ranges. Rds On characteristics, gate charge, and input capacitance values are provided for circuit design verification but do not restrict substitution eligibility when primary parameters align.

Four active substitute components meet these criteria across manufacturers onsemi and Diodes Incorporated, each available in standard SOT-223 packaging with full RoHS3 compliance.

Parameter Comparison

Parameter STN3PF06 (STMicroelectronics) NVF2955T1G (onsemi) NDT2955 (onsemi) NTF2955T1G (onsemi) DMP6250SE-13 (Diodes Inc.)
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel
Vdss (V) 60 60 60 60 60
Id @ 25°C (A) 2.5 (Tc) 2.6 (Ta) 2.5 (Ta) 1.7 (Ta) 2.1 (Ta)
Rds On (Max) @ 10V (mOhm) 220 @ 1.5A 170 @ 750mA 300 @ 2.5A 185 @ 2.4A 250 @ 1A
Vgs(th) (Max) @ 250µA (V) 4 4 4 4 3
Gate Charge Qg (Max) @ 10V (nC) 21 14.3 15 14.3 9.7
Ciss (Max) @ 25-30V (pF) 850 @ 25V 492 @ 25V 601 @ 30V 492 @ 25V 551 @ 30V
Operating Temperature (°C) -65 ~ 150 -55 ~ 175 -55 ~ 150 -55 ~ 175 -55 ~ 150
Package SOT-223 SOT-223 SOT-223-4 SOT-223 SOT-223-3
Product Status Obsolete Active Active Active Active
RoHS3 Compliant Yes Yes Yes Yes Yes
MSL Rating 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Primary Substitute: NVF2955T1G (onsemi)

The NVF2955T1G provides the closest electrical alignment to the STN3PF06 with 2.6A continuous drain current, matching the 60V Vdss rating and 4V gate threshold specification. This part is actively manufactured, RoHS3 compliant, and extends the operating temperature range to -55°C to 175°C. The NVF2955T1G carries AEC-Q101 automotive qualification and is available in Tape & Reel packaging. Lower gate charge (14.3 nC) and reduced input capacitance (492 pF) provide improved switching performance compared to the original part.

Secondary Substitute: NDT2955 (onsemi)

The NDT2955 matches the STN3PF06 in continuous drain current specification (2.5A) and maintains identical 60V Vdss and 4V Vgs(th) parameters. This part is actively produced and RoHS3 compliant. The SOT-223-4 package variant provides mechanical compatibility with standard SOT-223 footprints. Operating temperature range extends to -55°C to 150°C.

Tertiary Substitute: NTF2955T1G (onsemi)

The NTF2955T1G is an active onsemi component with 1.7A continuous drain current, lower than the original specification but suitable for applications with reduced current requirements. This part maintains 60V Vdss, 4V Vgs(th), and extends operating temperature to -55°C to 175°C. Gate charge and input capacitance values are identical to the NVF2955T1G variant.

Alternative Substitute: DMP6250SE-13 (Diodes Incorporated)

The DMP6250SE-13 provides 2.1A continuous drain current with 60V Vdss rating. This part is actively manufactured and RoHS3 compliant. The lower gate threshold voltage (3V @ 250µA) and reduced gate charge (9.7 nC) offer alternative switching characteristics. Operating temperature range is -55°C to 150°C. Diodes Incorporated sourcing provides supply chain diversification.

All substitute parts maintain P-Channel configuration, SOT-223 surface mount packaging, ±20V maximum gate voltage, and MSL Level 1 moisture sensitivity rating. Selection among active substitutes depends on specific application requirements for current capacity, temperature range, and supply chain preferences.

Frequently Asked Questions (FAQ)

Q: Can the NVF2955T1G directly replace the STN3PF06 in existing PCB designs?

A: Yes. The NVF2955T1G maintains identical SOT-223 package pinout (TO-261-4, TO-261AA case), P-Channel configuration, 60V Vdss rating, and 4V gate threshold voltage. No PCB layout modifications are required. The part is pin-compatible and electrically compatible for standard switching applications.

Q: What is the primary difference between the NDT2955 and NTF2955T1G substitutes?

A: The NDT2955 provides 2.5A continuous drain current matching the original STN3PF06 specification, while the NTF2955T1G provides 1.7A. Both maintain 60V Vdss and 4V Vgs(th) ratings. The NDT2955 is suitable for applications requiring full current capacity; the NTF2955T1G is appropriate for lower-current designs. Both are actively manufactured onsemi products.

Q: Does the DMP6250SE-13 have different gate drive requirements compared to the STN3PF06?

A: The DMP6250SE-13 has a lower gate threshold voltage (3V @ 250µA versus 4V), which may affect gate drive circuit timing. Gate charge is significantly lower (9.7 nC versus 21 nC), resulting in faster switching response. Circuit verification is necessary to confirm compatibility with existing gate drive implementations, particularly in high-frequency switching applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All four substitute components (NVF2955T1G, NDT2955, NTF2955T1G, and DMP6250SE-13) are RoHS3 compliant with MSL Level 1 (unlimited) moisture sensitivity rating, matching the original STN3PF06 environmental specifications.

Q: Which substitute offers the widest operating temperature range?

A: Both the NVF2955T1G and NTF2955T1G extend the upper operating temperature limit to 175°C (versus 150°C for the original part), with lower temperature limits of -55°C. These parts are suitable for applications requiring extended high-temperature operation.

Q: Is the NVF2955T1G automotive-qualified?

A: Yes. The NVF2955T1G carries AEC-Q101 automotive qualification and is available in Tape & Reel packaging, making it suitable for automotive and industrial applications requiring formal qualification documentation.

Q: What packaging options are available for these substitutes?

A: The NVF2955T1G is supplied in Tape & Reel (TR) format. The NDT2955, NTF2955T1G, and DMP6250SE-13 are available in Cut Tape (CT) and Digi-Reel® packaging. All maintain SOT-223 surface mount configuration compatible with standard pick-and-place assembly equipment.

Q: Can the NTF2955T1G be used in applications requiring 2.5A continuous current?

A: The NTF2955T1G is rated for 1.7A continuous drain current and is not suitable for applications requiring sustained 2.5A operation. The NDT2955 or NVF2955T1G should be selected for full-current applications.

Q: How do the gate charge specifications affect circuit design?

A: The substitute parts have significantly lower gate charge values (9.7 to 15 nC) compared to the STN3PF06 (21 nC). Lower gate charge reduces switching losses and allows faster switching transitions. Existing gate drive circuits designed for the original part will function with substitutes but may exhibit improved efficiency and reduced power dissipation.

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