STN2NE10L Equivalent & Substitute Parts

Part Overview

The STN2NE10L is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 100V drain-to-source voltage with 1.8A continuous drain current at 25°C. The device is packaged in SOT-223 surface mount configuration and is part of the STripFET™ series. This part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts listed below maintain electrical and mechanical compatibility within the specified parameter ranges.

Substiute Parts

STN2NE10L
STMicroelectronicsIn Stock: 15198STN2NE10L Datasheet
STN2NE10L
Current Part
FQT7N10LTF
onsemiIn Stock: 45435FQT7N10LTF Datasheet
FQT7N10LTF
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IRFL110TRPBF
Vishay SiliconixIn Stock: 61976IRFL110TRPBF Datasheet
IRFL110TRPBF
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IRFL4310TRPBF
Infineon TechnologiesIn Stock: 43115IRFL4310TRPBF Datasheet
IRFL4310TRPBF
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IRLL110TRPBF
Vishay SiliconixIn Stock: 30418IRLL110TRPBF Datasheet
IRLL110TRPBF
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ZVN4310GTA
Diodes IncorporatedIn Stock: 25778ZVN4310GTA Datasheet
ZVN4310GTA
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 1.8 A (Tc)
Rds On (Max) @ 10V 400 mOhm @ 1A
Gate Threshold Voltage (Vgs(th)) (Max) 3 V @ 250µA
Power Dissipation (Max) 2.5 W (Tc)
Mounting Type Surface Mount
Package SOT-223 (TO-261-4, TO-261AA)
Operating Temperature (TJ) 150 °C (Max)
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the STN2NE10L are selected based on strict electrical and mechanical parameter alignment. All substitute devices maintain the following critical specifications:

Electrical Compatibility Criteria:

  • Drain to Source Voltage (Vdss): 100V (exact match required)
  • FET Type: N-Channel (exact match required)
  • Technology: MOSFET (Metal Oxide) (exact match required)
  • Gate Threshold Voltage (Vgs(th)): Maximum 4V @ 250µA (within acceptable range)
  • Continuous Drain Current (Id): Minimum 1.5A @ 25°C (meets or exceeds primary specification)
  • Maximum Gate Voltage (Vgs): ±10V to ±20V (compatible with drive circuits)

Mechanical Compatibility Criteria:

  • Mounting Type: Surface Mount (exact match required)
  • Package: SOT-223 / TO-261-4 / TO-261AA (exact match required)
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) (exact match required)

Regulatory Compliance:

  • RoHS3 Compliant (all substitutes meet this requirement)
  • ECCN: EAR99 (all substitutes classified identically)
  • HTSUS: 8541.29.0095 (all substitutes classified identically)

Substitutes are grouped by product status (Active vs. Obsolete) and performance characteristics. All listed substitutes are currently in active production status, ensuring long-term availability and supply chain stability.

Parameter Comparison

Parameter STN2NE10L (Main) FQT7N10LTF IRFL110TRPBF IRFL4310TRPBF IRLL110TRPBF ZVN4310GTA
Manufacturer STMicroelectronics onsemi Vishay Siliconix Infineon Technologies Vishay Siliconix Diodes Incorporated
Product Status Obsolete Active Active Active Active Active
Vdss (V) 100 100 100 100 100 100
Id @ 25°C (A) 1.8 (Tc) 1.7 (Tc) 1.5 (Tc) 1.6 (Ta) 1.5 (Tc) 1.67 (Ta)
Rds On (Max) @ 10V (mOhm) 400 @ 1A 350 @ 850mA 540 @ 900mA 200 @ 1.6A 540 @ 900mA 540 @ 3.3A
Vgs(th) (Max) @ 250µA (V) 3 2 4 4 2 3
Gate Charge (Qg) @ 5V or 10V (nC) 14 @ 5V 6 @ 5V 8.3 @ 10V 25 @ 10V 6.1 @ 5V
Input Capacitance (Ciss) @ 25V (pF) 345 290 180 330 250 350
Power Dissipation (Max) (W) 2.5 (Tc) 2 (Tc) 3.1 (Tc) 1 (Ta) 3.1 (Tc) 3 (Ta)
Operating Temperature (TJ) (°C) 150 (Max) −55 to 150 −55 to 150 −55 to 150 −55 to 150 −55 to 150
Package SOT-223 SOT-223-4 SOT-223 SOT-223 SOT-223 SOT-223-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

FQT7N10LTF (onsemi) is the preferred substitute for the STN2NE10L. This device maintains 100V Vdss rating with 1.7A continuous drain current, meeting 94% of the primary part's current specification. The FQT7N10LTF features superior on-resistance characteristics (350 mOhm @ 850mA, 10V) compared to the main part and lower gate charge (6 nC @ 5V), resulting in improved switching efficiency. Product status is Active with full RoHS3 compliance and unlimited moisture sensitivity rating. Current inventory availability is 45,400 units.

IRFL4310TRPBF (Infineon Technologies) provides the lowest on-resistance among all substitutes (200 mOhm @ 1.6A, 10V), offering superior thermal performance in applications requiring minimal conduction losses. The device maintains 100V Vdss and 1.6A continuous drain current. Product status is Active with ROHS3 compliance and REACH Unaffected status. Inventory availability is 43,016 units.

Secondary Substitutes (Acceptable Compatibility):

IRLL110TRPBF (Vishay Siliconix) and IRFL110TRPBF (Vishay Siliconix) both provide 1.5A continuous drain current, representing 83% of the primary specification. Both maintain 100V Vdss and SOT-223 packaging. IRLL110TRPBF features lower gate threshold voltage (2V @ 250µA) and reduced gate charge (6.1 nC @ 5V), suitable for low-voltage gate drive applications. IRFL110TRPBF offers higher power dissipation capability (3.1W Tc). Both devices are Active status with RoHS3 compliance. IRFL110TRPBF inventory is 61,900 units; IRLL110TRPBF inventory is 30,320 units.

ZVN4310GTA (Diodes Incorporated) provides 1.67A continuous drain current at 100V Vdss, representing 93% of the primary specification. This device features the highest power dissipation rating (3W Ta) among substitutes. Product status is Active with RoHS3 compliance and REACH Unaffected status. Inventory availability is 25,720 units.

Regulatory and Compliance Considerations:

All substitute parts maintain ROHS3 compliance and EAR99 ECCN classification, ensuring regulatory equivalence to the obsolete STN2NE10L. REACH status varies: FQT7N10LTF, IRFL4310TRPBF, and ZVN4310GTA are REACH Unaffected; IRFL110TRPBF and IRLL110TRPBF are REACH Affected. Selection should account for end-application regulatory requirements in regions where REACH compliance is mandated.

Frequently Asked Questions (FAQ)

Q: Can the FQT7N10LTF directly replace the STN2NE10L without circuit modifications?

A: Yes. The FQT7N10LTF maintains identical Vdss (100V), FET type (N-Channel), package (SOT-223), and mounting configuration. The 1.7A continuous drain current specification exceeds the minimum requirement for most applications designed for the 1.8A primary part. Gate threshold voltage (2V @ 250µA) is lower than the primary part (3V @ 250µA), requiring verification that gate drive voltage remains within the ±20V maximum specification. No circuit modifications are required for standard applications.

Q: What is the difference between the IRFL110TRPBF and IRLL110TRPBF?

A: Both devices are manufactured by Vishay Siliconix and maintain identical electrical ratings (100V Vdss, 1.5A Id, SOT-223 package). The primary difference is gate drive voltage specification: IRFL110TRPBF requires 10V for maximum on-resistance specification, while IRLL110TRPBF operates at 4V or 5V. IRLL110TRPBF is suitable for low-voltage gate drive circuits; IRFL110TRPBF is suitable for standard 10V gate drive applications. Both are Active status with RoHS3 compliance.

Q: Why does the IRFL4310TRPBF have lower on-resistance than the primary part?

A: The IRFL4310TRPBF (Infineon HEXFET® series) features advanced semiconductor process technology resulting in 200 mOhm on-resistance @ 1.6A, 10V compared to the STN2NE10L's 400 mOhm @ 1A, 10V. This represents improved die design and manufacturing efficiency. Lower on-resistance reduces conduction losses and heat dissipation in the same thermal environment, providing performance benefits in power-sensitive applications.

Q: Are all substitute parts available in the same packaging configuration?

A: All substitute parts are packaged in SOT-223 surface mount configuration with TO-261-4 or TO-261AA case designations, maintaining mechanical and thermal compatibility with the primary part. Minor variations exist in pin count (SOT-223 vs. SOT-223-3 vs. SOT-223-4), but all are compatible with standard SOT-223 PCB footprints and reflow soldering processes.

Q: What is the significance of the Moisture Sensitivity Level (MSL) rating?

A: All listed parts, including the primary STN2NE10L, carry MSL 1 (Unlimited) classification. This indicates the device has unlimited shelf life without moisture bake-out requirements prior to soldering. No special handling or storage procedures are required beyond standard component storage practices. MSL 1 rating ensures compatibility with standard manufacturing and supply chain processes.

Q: Which substitute part is recommended for high-temperature applications?

A: All substitute parts maintain identical maximum junction temperature (TJ) of 150°C, matching the primary part specification. Selection should be based on power dissipation requirements and thermal management design. The ZVN4310GTA offers the highest power dissipation rating (3W Ta), suitable for applications with elevated ambient temperatures or limited heat sinking. The IRFL4310TRPBF offers the lowest on-resistance, minimizing self-heating in high-current applications.

Q: What is the impact of different gate charge specifications on circuit design?

A: Gate charge (Qg) affects gate drive circuit design and switching speed. The primary part specifies 14 nC @ 5V. Substitutes range from 6 nC (FQT7N10LTF, IRLL110TRPBF) to 25 nC (IRFL4310TRPBF). Lower gate charge enables faster switching and reduced gate drive power consumption. Higher gate charge requires larger gate drive current capability. Existing gate drive circuits designed for the primary part will function with all substitutes; optimization of gate drive timing may improve overall circuit efficiency.

Q: Are there any REACH compliance considerations for substitute selection?

A: REACH status varies among substitutes. FQT7N10LTF, IRFL4310TRPBF, and ZVN4310GTA are REACH Unaffected. IRFL110TRPBF and IRLL110TRPBF are REACH Affected. Applications subject to REACH regulations (primarily European Union) should prioritize REACH Unaffected parts. Applications without REACH regulatory requirements may select from any substitute based on electrical performance and availability criteria.

Q: What inventory considerations should guide substitute selection?

A: Current inventory availability is highest for IRFL110TRPBF (61,900 units), followed by FQT7N10LTF (45,400 units) and IRFL4310TRPBF (43,016 units). For applications requiring immediate procurement or high-volume orders, IRFL110TRPBF offers the largest available stock. For long-term design support, all listed substitutes maintain Active product status, ensuring continued availability and supply chain stability beyond current inventory levels.

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