STN2NE10 N-Channel MOSFET 100V 2A Equivalent & Substitute Parts

Part Overview

The STN2NE10 is an N-Channel MOSFET manufactured by STMicroelectronics in the STripFET™ series, rated for 100V drain-to-source voltage with 2A continuous drain current in a surface mount SOT-223 package. This device is classified as obsolete product status. Identification of equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs and legacy system support.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	2	A
On-State Resistance (Rds On) @ 1A, 10V	400	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Power Dissipation (Max)	2.5	W
Operating Temperature (TJ)	150	°C
Package Type	SOT-223	TO-261-4, TO-261AA
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitution of the STN2NE10 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Continuous Drain Current (Id): Must meet or exceed 2A at 25°C
On-State Resistance (Rds On): Lower values indicate improved performance; values at or below 400mOhm @ specified conditions are acceptable
Gate Threshold Voltage (Vgs(th)): Must be compatible with circuit drive requirements
Power Dissipation: Must support thermal requirements of the application
Maximum Gate Voltage (Vgs): Must accommodate ±20V or greater

Mechanical Compatibility Criteria:

Package Type: SOT-223 (TO-261-4, TO-261AA) surface mount configuration
Mounting Type: Surface mount
Moisture Sensitivity Level: MSL 1 (Unlimited)

Regulatory Compliance:

RoHS3 Compliant
REACH Status: Unaffected or Affected (both acceptable)
ECCN: EAR99

Substitute parts must satisfy all electrical parameters within the specified operating conditions and maintain identical or compatible package specifications.

Parameter Comparison

Parameter	STN2NE10 (Main)	FQT7N10LTF	IRFL4310TRPBF	IRLL110TRPBF
Manufacturer	STMicroelectronics	onsemi	Infineon Technologies	Vishay Siliconix
Product Status	Obsolete	Active	Active	Active
Vdss (V)	100	100	100	100
Id @ 25°C (A)	2	1.7	1.6	1.5
Rds On (mOhm)	400 @ 1A, 10V	350 @ 850mA, 10V	200 @ 1.6A, 10V	540 @ 900mA, 5V
Vgs(th) (V)	4 @ 250µA	2 @ 250µA	4 @ 250µA	2 @ 250µA
Gate Charge Qg (nC)	19 @ 10V	6 @ 5V	25 @ 10V	6.1 @ 5V
Vgs (Max) (V)	±20	±20	±20	±10
Input Capacitance Ciss (pF)	305 @ 25V	290 @ 25V	330 @ 25V	250 @ 25V
Power Dissipation (W)	2.5	2	1	2 (Ta), 3.1 (Tc)
Operating Temperature (°C)	150	-55 to 150	-55 to 150	-55 to 150
Package	SOT-223	SOT-223-4	SOT-223	SOT-223
RoHS3 Compliant	Yes	Yes	Yes	Yes
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

FQT7N10LTF (onsemi QFET®)

The FQT7N10LTF is an active product with 100V Vdss rating and 1.7A continuous drain current. This part meets the voltage specification and approaches the current requirement of the STN2NE10. The on-state resistance of 350mOhm at 10V is superior to the main part. The device maintains RoHS3 compliance, MSL 1 rating, and extended operating temperature range (-55°C to 150°C). This substitute is suitable for applications where the 1.7A current rating is sufficient and lower on-state resistance is beneficial for thermal management.

IRFL4310TRPBF (Infineon Technologies HEXFET®)

The IRFL4310TRPBF is an active product with 100V Vdss rating and 1.6A continuous drain current. This part meets the voltage specification and provides reduced on-state resistance of 200mOhm at 10V, representing improved performance over the STN2NE10. The device maintains RoHS3 compliance, MSL 1 rating, and extended operating temperature range (-55°C to 150°C). This substitute is suitable for applications where the 1.6A current rating is sufficient and superior on-state resistance characteristics are advantageous.

IRLL110TRPBF (Vishay Siliconix)

The IRLL110TRPBF is an active product with 100V Vdss rating and 1.5A continuous drain current. This part meets the voltage specification but provides the lowest current rating among the substitutes. The on-state resistance of 540mOhm at 5V is higher than the main part, indicating increased power dissipation. The device maintains RoHS3 compliance and MSL 1 rating with extended operating temperature range (-55°C to 150°C). However, the maximum gate voltage is limited to ±10V compared to ±20V for the main part. This substitute is suitable only for applications where the 1.5A current rating is adequate and gate voltage requirements do not exceed ±10V.

All three substitute parts are active products with established supply chains, providing superior availability compared to the obsolete STN2NE10.

Frequently Asked Questions (FAQ)

Q: Can the FQT7N10LTF replace the STN2NE10 in all applications?

A: The FQT7N10LTF meets the 100V voltage requirement and provides 1.7A continuous drain current, which is lower than the STN2NE10's 2A rating. Substitution is valid only if the application circuit operates at or below 1.7A. The superior on-state resistance (350mOhm vs. 400mOhm) provides thermal benefits. Verify circuit current requirements before selection.

Q: What is the primary advantage of the IRFL4310TRPBF?

A: The IRFL4310TRPBF offers the lowest on-state resistance at 200mOhm at 10V, compared to 400mOhm for the STN2NE10. This characteristic reduces power dissipation and heat generation. However, the 1.6A current rating is lower than the main part's 2A specification.

Q: Why does the IRLL110TRPBF have a ±10V maximum gate voltage limit?

A: The IRLL110TRPBF is specified with a maximum gate voltage of ±10V, whereas the STN2NE10 and other substitutes support ±20V. This parameter is determined by the device's internal gate oxide design. Applications requiring gate voltages exceeding ±10V must not use this substitute.

Q: Are all substitute parts available in the same SOT-223 package?

A: Yes. All substitute parts are packaged in SOT-223 surface mount configuration (TO-261-4, TO-261AA), maintaining mechanical compatibility with the STN2NE10 footprint.

Q: What is the significance of the lower continuous drain current ratings in the substitutes?

A: The substitute parts provide 1.7A, 1.6A, and 1.5A ratings compared to the STN2NE10's 2A specification. Substitution is valid only if the application's maximum drain current does not exceed the substitute part's rating. Exceeding the rated current will result in device failure or reduced reliability.

Q: Do all substitute parts maintain RoHS3 compliance?

A: Yes. All three substitute parts are RoHS3 compliant, matching the environmental compliance status of the STN2NE10.

Q: What is the difference between Tc and Ta temperature measurements?

A: Tc (case temperature) and Ta (ambient temperature) represent different measurement points for thermal specifications. The STN2NE10 uses Tc measurement, while the IRFL4310TRPBF uses Ta measurement. Both devices support 150°C maximum junction temperature (TJ). Consult thermal design requirements to determine which measurement basis is appropriate for your application.

Q: Can gate charge differences affect circuit performance?

A: Yes. The STN2NE10 has a gate charge of 19nC at 10V, while substitutes range from 6nC to 25nC. Lower gate charge reduces switching losses and improves switching speed. Higher gate charge increases switching losses. Circuit design, particularly gate driver specifications and switching frequency, must accommodate the substitute part's gate charge characteristics.

Q: Is the REACH status difference between substitutes significant?

A: The IRLL110TRPBF is listed as REACH Affected, while the STN2NE10 and other substitutes are REACH Unaffected. Both statuses are compliant with regulatory requirements. The REACH Affected designation indicates the substance is subject to authorization or restriction under REACH regulations. Verify your supply chain and regulatory requirements to determine if this distinction affects your selection.

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