STN1NF10 N-Channel MOSFET 100V 1A Equivalent & Substitute Parts

Part Overview

The STN1NF10 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 100V drain-to-source voltage with 1A continuous drain current in a surface mount SOT-223 package. This device is part of the STripFET™ II series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	1	A (Tc)
Rds On (Max) @ Id, Vgs	800	mOhm @ 500mA, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	105	pF @ 25V
Power Dissipation (Max)	2.5	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-223	Surface Mount
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the STN1NF10 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Package Type: Must be SOT-223 surface mount
FET Type: Must be N-Channel MOSFET
Operating Temperature Range: Must cover -55°C to 150°C
Gate Drive Voltage Compatibility: Drive voltage must be compatible with system requirements

Secondary Compatibility Factors:

Continuous Drain Current (Id): Substitute must meet or exceed 1A at 25°C
On-State Resistance (Rds On): Lower values indicate improved performance
Gate Threshold Voltage (Vgs(th)): Must be within acceptable gate drive range
Gate Charge (Qg): Affects switching speed and drive circuit requirements
Input Capacitance (Ciss): Influences gate drive circuit design

The substitute parts IRFL110TRPBF and IRLL110TRPBF from Vishay Siliconix meet the primary substitution criteria with identical Vdss ratings, SOT-223 packaging, and compatible operating temperature ranges. Both substitutes provide higher continuous drain current ratings (1.5A) and improved on-state resistance characteristics compared to the STN1NF10.

Parameter Comparison

Parameter	STN1NF10 (Main)	IRFL110TRPBF	IRLL110TRPBF	Unit
Manufacturer	STMicroelectronics	Vishay Siliconix	Vishay Siliconix	—
Product Status	Obsolete	Active	Active	—
Drain to Source Voltage (Vdss)	100	100	100	V
Continuous Drain Current (Id) @ 25°C	1	1.5	1.5	A (Tc)
Drive Voltage (Max Rds On)	10	10	5	V
Rds On (Max) @ Id, Vgs	800 @ 500mA, 10V	540 @ 900mA, 10V	540 @ 900mA, 5V	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	4	4	2	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6	8.3	6.1	nC @ 10V / 5V
Input Capacitance (Ciss) (Max) @ Vds	105	180	250	pF @ 25V
Power Dissipation (Max)	2.5 (Tc)	3.1 (Tc)	3.1 (Tc)	W
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package Type	SOT-223	SOT-223	SOT-223	—
Vgs (Max)	±20	±20	±10	V
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

For Active Production and New Designs:

Both IRFL110TRPBF and IRLL110TRPBF are recommended as primary substitutes for the obsolete STN1NF10. Both parts are manufactured by Vishay Siliconix and maintain active product status, ensuring long-term availability and supply chain continuity. Both substitutes are ROHS3 compliant and carry MSL Level 1 ratings identical to the original part.

IRFL110TRPBF Selection Criteria:

The IRFL110TRPBF maintains the closest electrical compatibility with the STN1NF10 regarding gate drive voltage requirements. This part operates with a 10V drive voltage specification, matching the original part's drive voltage parameter. The IRFL110TRPBF provides improved on-state resistance (540 mOhm versus 800 mOhm) and higher continuous drain current capability (1.5A versus 1A), resulting in reduced power dissipation in equivalent circuit applications. This part is suitable for designs where the gate drive circuit is optimized for 10V operation.

IRLL110TRPBF Selection Criteria:

The IRLL110TRPBF is optimized for lower gate drive voltage operation, with specifications at 4V and 5V drive levels. This part features a lower gate threshold voltage (2V versus 4V) and reduced gate charge at 5V operation (6.1 nC versus 6 nC at 10V for the original). The IRLL110TRPBF is suitable for applications requiring reduced gate drive power consumption or systems with lower gate drive voltage availability. The lower maximum gate voltage specification (±10V versus ±20V) must be verified against system gate drive circuit design parameters.

Compliance and Regulatory Status:

All three parts maintain ROHS3 compliance and unlimited moisture sensitivity levels. The STN1NF10 carries REACH Unaffected status, while both Vishay substitutes carry REACH Affected status. Design teams must verify REACH compliance requirements for their specific applications and end-use markets.

Frequently Asked Questions (FAQ)

Q: Can the IRFL110TRPBF or IRLL110TRPBF be used as direct pin-for-pin replacements for the STN1NF10?

A: Both substitute parts share identical SOT-223 package pinouts and electrical interface requirements. Pin-for-pin replacement is mechanically and electrically feasible. However, gate drive voltage compatibility must be verified. The IRFL110TRPBF operates at 10V drive voltage, matching the STN1NF10 specification. The IRLL110TRPBF operates at 4V and 5V drive voltages and features a lower maximum gate voltage rating (±10V), requiring verification against system gate drive circuit design.

Q: What are the key differences between IRFL110TRPBF and IRLL110TRPBF?

A: The primary differences are gate drive voltage specifications and gate threshold voltage. The IRFL110TRPBF is specified at 10V drive voltage with 4V gate threshold voltage, closely matching the STN1NF10 parameters. The IRLL110TRPBF is specified at 4V and 5V drive voltages with a 2V gate threshold voltage, offering lower gate drive power consumption. The IRLL110TRPBF also has a lower maximum gate voltage rating (±10V versus ±20V). Selection depends on gate drive circuit design and available drive voltage levels.

Q: Are there any thermal or power dissipation considerations when substituting these parts?

A: The STN1NF10 is rated for 2.5W maximum power dissipation at Tc. Both substitute parts are rated for 3.1W maximum power dissipation at Tc, providing improved thermal headroom. The improved on-state resistance of both substitutes (540 mOhm versus 800 mOhm) results in lower conduction losses in equivalent current applications. Thermal design margins improve with either substitute part.

Q: What is the impact of higher input capacitance in the substitute parts?

A: The IRFL110TRPBF has input capacitance of 180 pF compared to 105 pF in the STN1NF10. The IRLL110TRPBF has input capacitance of 250 pF. Higher input capacitance increases gate charge requirements and may affect switching speed characteristics. Gate drive circuits must supply sufficient current to charge the gate capacitance within required switching time windows. This parameter is particularly relevant in high-frequency switching applications.

Q: Are both substitute parts available in the same packaging options as the STN1NF10?

A: Both IRFL110TRPBF and IRLL110TRPBF are supplied in SOT-223 surface mount packages, identical to the STN1NF10. Both parts are available in Cut Tape (CT) and Digi-Reel® packaging formats. Package compatibility is confirmed for direct board-level substitution.

Q: What is the significance of the REACH Affected status for the substitute parts?

A: The STN1NF10 carries REACH Unaffected status, while both Vishay substitutes carry REACH Affected status. REACH Affected status indicates the parts are subject to European Union chemical substance regulations. Design teams must verify REACH compliance requirements for their specific applications and end-use markets, particularly for products distributed in European Union territories.

Q: Can the substitute parts handle the same gate voltage range as the STN1NF10?

A: The STN1NF10 is rated for ±20V maximum gate voltage. The IRFL110TRPBF maintains the same ±20V rating. The IRLL110TRPBF has a lower maximum gate voltage rating of ±10V. Gate drive circuits must be designed to operate within the specified maximum gate voltage limits of the selected substitute part. The IRLL110TRPBF requires verification that system gate drive voltages do not exceed ±10V.

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