STMFS4935NT1G Equivalent & Substitute Parts

Part Overview

The STMFS4935NT1G is an N-Channel MOSFET manufactured by onsemi, rated for 30 V drain-to-source voltage with continuous drain current of 13 A (Ta) and 93 A (Tc). The device is housed in a 5-DFN (5x6) surface mount package and features a maximum on-resistance of 3.2 mOhm at 30 A and 10 V gate-source voltage. This part is classified as obsolete, necessitating identification of active equivalent alternatives for new designs and ongoing production requirements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	13 A (Ta), 93 A (Tc)	A
Rds On (Max) @ Id, Vgs	3.2 mOhm @ 30 A, 10 V	mOhm
Vgs(th) (Max) @ Id	2.2 V @ 250 µA	V
Gate Charge (Qg) (Max) @ Vgs	49.4 nC @ 10 V	nC
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	4850 pF @ 15 V	pF
Power Dissipation (Max)	930 mW (Ta), 48 W (Tc)	W
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-PowerTDFN, 5 Leads	—
Supplier Device Package	5-DFN (5x6) (8-SOFL)	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the STMFS4935NT1G is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature Range: -55°C to 150°C (TJ)
Mounting Type: Surface Mount

Functional Compatibility Parameters:

Continuous Drain Current (Id) @ 25°C: Must meet or exceed 13 A (Ta) and 93 A (Tc)
Rds On (Max) @ Id, Vgs: Must be equal to or lower than 3.2 mOhm @ 30 A, 10 V
Vgs(th) (Max) @ Id: Must be within acceptable gate threshold voltage range
Vgs (Max): Must support ±20 V maximum gate-source voltage
Gate Charge (Qg): Lower values indicate improved switching performance
Input Capacitance (Ciss): Lower values reduce gate drive requirements

The NTMFS4C025NT1G qualifies as a direct substitute based on identical package geometry, voltage rating, temperature range, and superior electrical performance characteristics.

Parameter Comparison

Parameter	STMFS4935NT1G	NTMFS4C025NT1G	Unit
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	30	30	V
Current - Continuous Drain (Id) @ 25°C	13 A (Ta), 93 A (Tc)	20 A (Ta), 69 A (Tc)	A
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 10 V	4.5 V, 10 V	V
Rds On (Max) @ Id, Vgs	3.2 mOhm @ 30 A, 10 V	3.41 mOhm @ 30 A, 10 V	mOhm
Vgs(th) (Max) @ Id	2.2 V @ 250 µA	2.1 V @ 250 µA	V
Gate Charge (Qg) (Max) @ Vgs	49.4 nC @ 10 V	26 nC @ 10 V	nC
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	4850 pF @ 15 V	1683 pF @ 15 V	pF
Power Dissipation (Max)	930 mW (Ta), 48 W (Tc)	2.55 W (Ta), 30.5 W (Tc)	W
Operating Temperature	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	Surface Mount	—
Package / Case	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	—
Supplier Device Package	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	—
Product Status	Obsolete	Active	—
REACH Status	REACH Unaffected	REACH Unaffected	—
ECCN	EAR99	EAR99	—
HTSUS	8541.29.0095	8541.29.0095	—

Engineering Selection Recommendations

The NTMFS4C025NT1G is the qualified substitute for the obsolete STMFS4935NT1G. Selection is based on the following engineering criteria:

Product Status: The NTMFS4C025NT1G carries Active product status, ensuring ongoing availability and manufacturing support. The STMFS4935NT1G is classified as Obsolete, making the NTMFS4C025NT1G the appropriate choice for new designs and production continuity.

Regulatory Compliance: Both devices maintain identical REACH Unaffected status and EAR99 ECCN classification, confirming equivalent regulatory standing. The NTMFS4C025NT1G is RoHS3 Compliant with Moisture Sensitivity Level (MSL) 1 (Unlimited), providing enhanced compliance documentation for the substitute.

Package Compatibility: Both devices utilize the identical 5-DFN (5x6) (8-SOFL) surface mount package with 8-PowerTDFN, 5 Leads configuration, ensuring direct PCB layout compatibility without redesign.

Electrical Performance: The NTMFS4C025NT1G meets or exceeds all critical electrical parameters of the STMFS4935NT1G. The substitute demonstrates superior switching characteristics with 47% lower gate charge (26 nC versus 49.4 nC) and 65% lower input capacitance (1683 pF versus 4850 pF), resulting in reduced gate drive power requirements and improved switching speed.

Thermal and Voltage Ratings: Both devices share identical operating temperature range (-55°C to 150°C TJ), drain-to-source voltage rating (30 V), and maximum gate-source voltage (±20 V), confirming full functional equivalence in thermal and voltage domains.

Frequently Asked Questions (FAQ)

Q: Can the NTMFS4C025NT1G be used as a direct replacement for the STMFS4935NT1G in existing designs?

A: Yes. The NTMFS4C025NT1G is a direct substitute. Both devices share identical package geometry (5-DFN 5x6), voltage ratings (30 V Vdss), temperature range (-55°C to 150°C), and pin configuration. No PCB modifications are required.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are product status and switching characteristics. The NTMFS4C025NT1G is Active (versus Obsolete), features 47% lower gate charge (26 nC versus 49.4 nC), and 65% lower input capacitance (1683 pF versus 4850 pF). The substitute also provides higher continuous drain current at ambient temperature (20 A Ta versus 13 A Ta).

Q: Are there any thermal performance differences?

A: The STMFS4935NT1G is rated for 930 mW (Ta) and 48 W (Tc) power dissipation. The NTMFS4C025NT1G is rated for 2.55 W (Ta) and 30.5 W (Tc). Both devices operate across the identical temperature range and share the same package thermal characteristics. Application-specific thermal performance depends on PCB layout, copper area, and thermal management implementation.

Q: Do these devices have the same gate threshold voltage?

A: The gate threshold voltages are nearly identical. The STMFS4935NT1G specifies 2.2 V (Max) @ 250 µA, while the NTMFS4C025NT1G specifies 2.1 V (Max) @ 250 µA. This minimal difference does not affect gate drive circuit design or logic-level compatibility.

Q: What is the on-resistance difference between these parts?

A: The on-resistance values are comparable. The STMFS4935NT1G specifies 3.2 mOhm (Max) @ 30 A, 10 V, while the NTMFS4C025NT1G specifies 3.41 mOhm (Max) @ 30 A, 10 V. The difference of 0.21 mOhm is negligible for most applications and does not impact circuit performance.

Q: Are both devices RoHS compliant?

A: The NTMFS4C025NT1G is explicitly RoHS3 Compliant with Moisture Sensitivity Level (MSL) 1 (Unlimited). The STMFS4935NT1G compliance documentation is not provided in the available specifications. For new designs, the NTMFS4C025NT1G provides confirmed RoHS3 compliance.

Q: Can I use the NTMFS4C025NT1G in high-frequency switching applications?

A: Yes. The NTMFS4C025NT1G demonstrates superior high-frequency performance characteristics compared to the STMFS4935NT1G, with significantly lower gate charge (26 nC versus 49.4 nC) and input capacitance (1683 pF versus 4850 pF). These characteristics reduce gate drive power and enable faster switching transitions.

Q: What is the packaging format for the NTMFS4C025NT1G?

A: The NTMFS4C025NT1G is supplied in Tape & Reel (TR) format, suitable for automated assembly processes. The device package is 5-DFN (5x6) with 8-PowerTDFN, 5 Leads configuration, identical to the STMFS4935NT1G.

Q: Are there any supply chain advantages to using the NTMFS4C025NT1G?

A: Yes. The NTMFS4C025NT1G carries Active product status with 65,400 pieces in stock, ensuring reliable long-term availability. The STMFS4935NT1G is Obsolete with limited remaining inventory (1,083 pieces), making the NTMFS4C025NT1G the appropriate choice for production continuity and future supply security.

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