STL9P2UH7 Equivalent & Substitute Parts

Part Overview

The STL9P2UH7 is a P-Channel MOSFET manufactured by STMicroelectronics, designed for surface mount applications in the PowerFlat™ (3.3x3.3) package. This device operates at 20V drain-to-source voltage with a continuous drain current of 9A at 25°C and dissipates a maximum of 2.9W. The STL9P2UH7 is classified as obsolete, necessitating identification of equivalent substitute components for ongoing design requirements and production continuity.

Substiute Parts

STL9P2UH7

STMicroelectronicsIn Stock: 23385STL9P2UH7 Datasheet

Current PartRFQ

SI5419DU-T1-GE3

Vishay SiliconixIn Stock: 38365SI5419DU-T1-GE3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the STL9P2UH7 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: P-Channel topology must be maintained
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 20V
• Continuous Drain Current (Id): Substitute must equal or exceed 9A at 25°C
• On-State Resistance (Rds On): Substitute performance must be compatible with circuit requirements
• Power Dissipation: Substitute must handle thermal requirements of the application
• Gate Voltage (Vgs): Operating voltage range must be compatible with drive circuitry

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package Compatibility: Physical dimensions and pin configuration must accommodate PCB layout

Compliance Requirements:

• RoHS3 Compliance mandatory
• Moisture Sensitivity Level (MSL) 1 acceptable

The SI5419DU-T1-GE3 meets these substitution criteria with enhanced electrical specifications that provide design margin while maintaining P-Channel MOSFET functionality.

Parameter Comparison

Engineering Selection Recommendations

SI5419DU-T1-GE3 as Primary Substitute:

The SI5419DU-T1-GE3 is suitable as a substitute for the STL9P2UH7 based on the following engineering factors:

1. Product Status: The SI5419DU-T1-GE3 maintains Active product status, ensuring long-term availability and supply chain continuity compared to the obsolete STL9P2UH7.

2. Electrical Specifications: The substitute exceeds the main part specifications in critical parameters:

   • Vdss rating of 30V exceeds the 20V requirement, providing voltage margin
   • Continuous drain current of 12A exceeds the 9A requirement
   • On-state resistance of 20 mOhm is comparable to the main part's 22.5 mOhm

3. Compliance Alignment: Both devices maintain ROHS3 compliance and MSL Level 1 rating, ensuring compatibility with current manufacturing and environmental standards.

4. Thermal Performance: The SI5419DU-T1-GE3 provides enhanced thermal dissipation capability (31W Tc) compared to the STL9P2UH7 (2.9W Tc), supporting higher power applications.

5. Gate Voltage Range: The substitute's ±20V Vgs maximum rating provides broader compatibility with various drive circuit implementations compared to the ±8V rating of the main part.

Package Consideration: The SI5419DU-T1-GE3 uses PowerPAK® ChipFET™ Single packaging, which differs from the STL9P2UH7's PowerFlat™ (3.3x3.3) package. PCB layout modification is required for physical accommodation.

Frequently Asked Questions (FAQ)

Q: Can the SI5419DU-T1-GE3 directly replace the STL9P2UH7 without circuit modifications?

A: The SI5419DU-T1-GE3 is electrically compatible as a substitute due to matching P-Channel MOSFET topology and superior electrical specifications. However, package differences (PowerPAK® ChipFET™ Single versus PowerFlat™ 3.3x3.3) require PCB layout redesign. Gate drive circuitry may require evaluation due to differences in gate charge (45 nC versus 22 nC) and input capacitance (1400 pF versus 2390 pF).

Q: What are the key electrical parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1) FET channel type (P-Channel), (2) Drain-to-Source voltage rating (minimum 20V), (3) Continuous drain current capability (minimum 9A), (4) On-state resistance performance, and (5) Power dissipation capability. The SI5419DU-T1-GE3 meets or exceeds all these parameters.

Q: Does the higher gate charge of the SI5419DU-T1-GE3 affect circuit performance?

A: The SI5419DU-T1-GE3 exhibits higher gate charge (45 nC at 10V) compared to the STL9P2UH7 (22 nC at 4.5V). This parameter affects gate drive current requirements and switching speed. Circuit evaluation is necessary to confirm compatibility with existing gate drive circuitry.

Q: Are both devices compliant with current environmental and regulatory standards?

A: Both the STL9P2UH7 and SI5419DU-T1-GE3 are ROHS3 compliant and REACH unaffected. Both maintain MSL Level 1 (Unlimited) moisture sensitivity rating, meeting current manufacturing and environmental requirements.

Q: What is the impact of the different package types on design implementation?

A: The STL9P2UH7 uses 8-PowerVDFN (PowerFlat™ 3.3x3.3) packaging, while the SI5419DU-T1-GE3 uses PowerPAK® ChipFET™ Single packaging. These packages have different physical dimensions, pin configurations, and thermal characteristics. PCB layout, trace routing, and thermal management design must be re-evaluated for the substitute component.

Q: Why is the STL9P2UH7 classified as obsolete?

A: The STL9P2UH7 is classified as obsolete, indicating that STMicroelectronics has discontinued production and support for this component. The SI5419DU-T1-GE3, maintained in Active status by Vishay Siliconix, provides ongoing availability and supply chain security for new designs and production continuity.