STL8NH3LL N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The STL8NH3LL is an N-Channel 30V 8A MOSFET manufactured by STMicroelectronics in the STripFET™ series, housed in a PowerFlat™ (3.3x3.3) surface mount package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and production continuity. The part operates across a temperature range of -55°C to 150°C (TJ) and is RoHS3 compliant with MSL 1 moisture sensitivity rating.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	8	A (Tc)
Rds On (Max) @ Id, Vgs	15	mOhm @ 4A, 10V
Gate Threshold Voltage Vgs(th) (Max)	2.5	V @ 250µA
Gate Charge (Qg) (Max)	12	nC @ 4.5V
Input Capacitance (Ciss) (Max)	965	pF @ 25V
Power Dissipation (Max)	2 / 50	W (Ta) / W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	PowerFlat™ (3.3x3.3)	8-PowerVDFN
RoHS Status	ROHS3 Compliant	—
MSL Rating	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the STL8NH3LL is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 30V minimum
N-Channel FET topology with MOSFET technology
Operating temperature range: -55°C to 150°C (TJ)
RoHS3 compliance and MSL 1 rating
Surface mount configuration

Performance Alignment Criteria:

Continuous drain current (Id) at or above 8A
Rds On (Max) at 10V gate drive: 15mOhm or lower
Gate threshold voltage (Vgs(th)): 2.5V or lower
Gate charge (Qg): 12nC or lower
Input capacitance (Ciss): 965pF or lower

Package Compatibility: Substitute parts must be surface mount devices with compatible footprints and thermal characteristics. Physical package dimensions and pin configurations must support direct or adapter-based PCB integration.

Parameter Comparison

Parameter	STL8NH3LL	FDMC8878	AON7406	CSD17327Q5A	RS1E130GNTB
Manufacturer	STMicroelectronics	onsemi	Alpha & Omega Semiconductor	Texas Instruments	Rohm Semiconductor
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	8 (Tc)	9.6 (Ta) / 16.5 (Tc)	9 (Ta) / 25 (Tc)	65 (Tc)	13 (Ta)
Rds On (Max) @ 10V (mOhm)	15 @ 4A	14 @ 9.6A	17 @ 9A	12.2 @ 11A	11.7 @ 13A
Vgs(th) (Max) (V)	2.5 @ 250µA	3 @ 250µA	2.4 @ 250µA	2 @ 250µA	2.5 @ 1mA
Qg (Max) (nC)	12 @ 4.5V	26 @ 10V	18 @ 10V	3.4 @ 4.5V	7.9 @ 10V
Ciss (Max) (pF)	965 @ 25V	1230 @ 15V	888 @ 15V	506 @ 15V	420 @ 15V
Power Dissipation (W)	2 (Ta) / 50 (Tc)	2.1 (Ta) / 31 (Tc)	3.1 (Ta) / 15.5 (Tc)	3 (Ta)	3 (Ta) / 22.2 (Tc)
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150
Package	PowerFlat™ (3.3x3.3)	8-MLP (3.3x3.3)	8-DFN-EP (3x3)	8-VSONP (5x6)	8-HSOP
Product Status	Obsolete	Obsolete	Not For New Designs	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Substitute: CSD17327Q5A (Texas Instruments)

The CSD17327Q5A is the recommended primary substitute. This device maintains 30V Vdss rating with superior continuous drain current (65A Tc), lower Rds On (12.2mOhm), and significantly reduced gate charge (3.4nC). The part carries Active product status, ensuring long-term availability and design support. Full RoHS3 compliance and MSL 1 rating align with the original specification. The 8-VSONP (5x6) package requires PCB layout modification but provides enhanced thermal performance. This substitute is suitable for new designs and production continuity.

Secondary Substitute: RS1E130GNTB (Rohm Semiconductor)

The RS1E130GNTB provides Active product status with 13A continuous drain current and superior Rds On performance (11.7mOhm). Gate charge (7.9nC) and input capacitance (420pF) are significantly lower than the original part, enabling faster switching characteristics. The 8-HSOP package differs from the original PowerFlat™ footprint and requires PCB redesign. RoHS3 compliance and MSL 1 rating are maintained. This substitute is appropriate for applications requiring improved efficiency and thermal management.

Tertiary Substitute: FDMC8878 (onsemi)

The FDMC8878 offers comparable electrical performance with 9.6A (Ta) / 16.5A (Tc) current rating and 14mOhm Rds On. The 8-MLP (3.3x3.3) package matches the original footprint dimensions, facilitating direct PCB integration. However, this part is classified as Obsolete, limiting its suitability for new production. Gate charge (26nC) and input capacitance (1230pF) exceed original specifications. This substitute is applicable only for legacy system maintenance where existing PCB layouts must be preserved.

Quaternary Substitute: AON7406 (Alpha & Omega Semiconductor)

The AON7406 provides 9A (Ta) / 25A (Tc) current capability with 17mOhm Rds On. Product status is Not For New Designs, restricting its application to existing production support. The 8-DFN-EP (3x3) package requires PCB layout modification. Gate charge (18nC) and input capacitance (888pF) are elevated relative to the original specification. This substitute is limited to legacy system support where design freeze conditions apply.

Frequently Asked Questions (FAQ)

Q: Can the CSD17327Q5A directly replace the STL8NH3LL on existing PCBs?

A: No. The CSD17327Q5A uses an 8-VSONP (5x6) package, while the STL8NH3LL uses PowerFlat™ (3.3x3.3). Physical footprint dimensions and pin layouts differ, requiring PCB redesign and layout modification. Thermal via placement and copper area distribution must be re-evaluated for the larger package.

Q: Which substitute offers the best thermal performance?

A: The CSD17327Q5A provides the highest power dissipation capability (3W Ta) and lowest Rds On (12.2mOhm), resulting in reduced junction temperature rise under load. The larger 8-VSONP package accommodates enhanced thermal vias and copper planes for improved heat dissipation.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All listed substitutes (FDMC8878, AON7406, CSD17327Q5A, RS1E130GNTB) are RoHS3 compliant with MSL 1 moisture sensitivity rating, matching the original STL8NH3LL specification.

Q: What is the impact of higher gate charge on circuit design?

A: Gate charge (Qg) affects gate drive circuit design and switching speed. The FDMC8878 (26nC) and AON7406 (18nC) require higher gate drive current or longer switching times compared to the original (12nC) and CSD17327Q5A (3.4nC). Gate driver selection and timing margins must be re-evaluated for substitutes with elevated Qg values.

Q: Can the FDMC8878 be used as a drop-in replacement?

A: The FDMC8878 shares the same 8-MLP (3.3x3.3) package footprint as the STL8NH3LL, enabling direct PCB placement without layout modification. However, electrical parameter differences (higher Rds On, gate charge, and input capacitance) may affect circuit performance. Functional validation is required to confirm compatibility with existing gate drive and thermal management designs.

Q: Why is the CSD17327Q5A recommended for new designs?

A: The CSD17327Q5A carries Active product status, ensuring manufacturer support, long-term availability, and continued production. Superior electrical performance (lower Rds On, gate charge, and input capacitance) enables improved efficiency and switching characteristics. These factors make it the optimal choice for new product development.

Q: What are the operating temperature considerations for RS1E130GNTB?

A: The RS1E130GNTB specification indicates a maximum operating temperature of 150°C (TJ), matching the original STL8NH3LL. Full temperature range operation (-55°C to 150°C) is supported. Thermal design must account for the 13A continuous current rating and 22.2W (Tc) power dissipation capability.

Q: How do input capacitance differences affect circuit performance?

A: Input capacitance (Ciss) influences gate charge requirements and switching transient behavior. The CSD17327Q5A (506pF) and RS1E130GNTB (420pF) have significantly lower Ciss than the original (965pF), reducing gate drive current demand and enabling faster switching transitions. The FDMC8878 (1230pF) requires higher gate drive capability.

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