STL66N3LLH5 Equivalent & Substitute Parts

Part Overview

The STL66N3LLH5 is an N-Channel 30V 80A MOSFET manufactured by STMicroelectronics in the STripFET™ V series. This device features a PowerFlat™ (5x6) surface mount package with wettable flanks, designed for high-current switching applications. The part is classified as Active with AEC-Q101 automotive qualification and ROHS3 compliance.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible package footprints and thermal characteristics. The following parts meet the substitution criteria based on drain-source voltage, continuous drain current capability, and surface mount packaging compatibility.

Substiute Parts

STL66N3LLH5
STMicroelectronicsIn Stock: 3211STL66N3LLH5 Datasheet
STL66N3LLH5
Current Part
AON6414A
Alpha & Omega Semiconductor Inc.In Stock: 5086AON6414A Datasheet
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BSC057N03LSGATMA1
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BSC080N03LSGATMA1
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BSC080N03LSGATMA1
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BSC080N03MSGATMA1
Infineon TechnologiesIn Stock: 1000261BSC080N03MSGATMA1 Datasheet
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BSC886N03LSGATMA1
Infineon TechnologiesIn Stock: 753BSC886N03LSGATMA1 Datasheet
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BSZ0994NSATMA1
Infineon TechnologiesIn Stock: 6081BSZ0994NSATMA1 Datasheet
BSZ0994NSATMA1
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CSD17302Q5A
Texas InstrumentsIn Stock: 14578CSD17302Q5A Datasheet
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CSD17522Q5A
Texas InstrumentsIn Stock: 18976CSD17522Q5A Datasheet
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CSD17552Q5A
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DMN3009SFG-7
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FDMS7680
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Key Parameters

Parameter STL66N3LLH5 Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 80 (Tc) A
Rds On (Max) @ 10V 5.8 mOhm
Gate Charge (Qg) @ 4.5V 12 nC
Power Dissipation (Max) 72 (Tc) W
Operating Temperature Range -55 to 175 °C
Package Type PowerFlat™ (5x6) 8-PowerVDFN
Mounting Type Surface Mount, Wettable Flank
Product Status Active
Qualification AEC-Q101

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following criteria:

Primary Electrical Parameters:

  • Drain to Source Voltage (Vdss): 30V (exact match required)
  • Continuous Drain Current (Id): Minimum 53A at Tc (meets or exceeds 80A requirement when considering thermal case conditions)
  • Rds On (Max) @ 10V: 8mOhm or lower (acceptable variance from 5.8mOhm baseline)
  • Operating Temperature Range: Minimum -55°C to 150°C (acceptable; main part extends to 175°C)

Package Compatibility:

  • Surface mount configuration with 8-pin power package footprint
  • Physical dimensions compatible with 5x6mm form factor
  • Wettable flank or equivalent thermal interface

Compliance Requirements:

  • ROHS3 compliance (mandatory)
  • Moisture Sensitivity Level 1 (unlimited)
  • REACH status: Unaffected or Affected (both acceptable)

Parts listed below satisfy these criteria and are suitable for direct substitution in applications where the STL66N3LLH5 is specified.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ Tc (A) Rds On Max @ 10V (mOhm) Qg @ 4.5V (nC) Power Diss. Tc (W) Temp Range (°C) Package Status
STL66N3LLH5 STMicroelectronics 30 80 5.8 12 72 -55 to 175 8-PowerVDFN Active
AON6414A Alpha & Omega Semiconductor 30 30 8 24 31 -55 to 150 8-PowerSMD Active
BSC080N03LSGATMA1 Infineon Technologies 30 53 8 21 35 -55 to 150 8-PowerTDFN Obsolete
BSC080N03MSGATMA1 Infineon Technologies 30 53 8 27 35 -55 to 150 8-PowerTDFN Not For New Designs
BSC057N03LSGATMA1 Infineon Technologies 30 71 5.7 30 45 -55 to 150 8-PowerTDFN Obsolete
BSC886N03LSGATMA1 Infineon Technologies 30 65 6 26 39 -55 to 150 8-PowerTDFN Obsolete
CSD17302Q5A Texas Instruments 30 87 7.9 7 3 -55 to 150 8-PowerTDFN Active
CSD17522Q5A Texas Instruments 30 87 8.1 4.3 3 -55 to 150 8-PowerTDFN Active
CSD17552Q5A Texas Instruments 30 60 6.2 12 3 -55 to 150 8-PowerTDFN Active
BSZ0994NSATMA1 Infineon Technologies 30 7 7 2.1 -55 to 150 8-PowerTDFN Active
DMN3009SFG-7 Diodes Incorporated 30 45 5.5 42 0.9 -55 to 150 8-PowerVDFN Active

Engineering Selection Recommendations

Preferred Substitutes (Active Status):

CSD17302Q5A, CSD17522Q5A, and CSD17552Q5A from Texas Instruments are recommended as primary alternatives. These parts maintain Active product status, deliver continuous drain current at or above 60A (Tc), and provide ROHS3 compliance. CSD17522Q5A offers the highest current capability at 87A (Tc), matching or exceeding the STL66N3LLH5 performance envelope.

Secondary Substitutes (Active Status):

AON6414A from Alpha & Omega Semiconductor is Active but delivers only 30A (Tc), which is below the 80A specification. This part is suitable only for applications where actual current demand does not exceed 30A continuous operation.

BSZ0994NSATMA1 from Infineon is Active but rated for 13A (Ta) only, making it unsuitable for high-current applications requiring 80A capability.

DMN3009SFG-7 from Diodes Incorporated is Active with 45A (Tc) capability, providing partial current coverage and lower power dissipation (0.9W Ta).

Obsolete or Restricted Substitutes:

BSC080N03LSGATMA1, BSC080N03MSGATMA1, BSC057N03LSGATMA1, and BSC886N03LSGATMA1 carry Obsolete or Not For New Designs status. These parts meet electrical parameters but are not recommended for new circuit designs due to product lifecycle restrictions.

Temperature Consideration:

The STL66N3LLH5 operates to 175°C (TJ), while all substitute parts listed operate to 150°C (TJ) maximum. Applications requiring operation above 150°C junction temperature cannot use these substitutes.

Frequently Asked Questions (FAQ)

Q: Can AON6414A replace STL66N3LLH5 in all applications?

A: No. AON6414A is rated for 30A (Tc) continuous drain current, while STL66N3LLH5 is rated for 80A (Tc). AON6414A is suitable only for applications where actual continuous current does not exceed 30A. Exceeding this limit will cause thermal runaway and device failure.

Q: What is the difference between Tc and Ta current ratings?

A: Tc (case temperature) represents continuous drain current when the device case is maintained at 25°C through active cooling. Ta (ambient temperature) represents continuous drain current in free air at 25°C ambient without forced cooling. Tc ratings are higher and represent maximum sustainable current with proper thermal management.

Q: Are the Infineon BSC series parts suitable for new designs?

A: BSC080N03LSGATMA1 and BSC057N03LSGATMA1 are marked Obsolete. BSC080N03MSGATMA1 is marked Not For New Designs. These parts should not be selected for new circuit development. Use Active-status alternatives such as CSD17302Q5A or CSD17522Q5A instead.

Q: How do package differences affect substitution?

A: All listed substitutes use 8-pin power packages (8-PowerVDFN, 8-PowerTDFN, 8-PowerSMD) with 5x6mm footprints. Physical dimensions are compatible for PCB layout purposes. However, thermal interface characteristics may differ. Verify thermal performance through simulation or testing when switching between manufacturers.

Q: What is the significance of Rds On (on-resistance) differences?

A: Rds On determines power dissipation during conduction. Lower Rds On reduces heat generation. STL66N3LLH5 has 5.8mOhm Rds On. Substitutes range from 5.5mOhm (DMN3009SFG-7) to 8.1mOhm (CSD17522Q5A). Higher Rds On increases power dissipation proportionally; thermal design must account for this difference.

Q: Can I use CSD17522Q5A if my application only requires 60A?

A: Yes. CSD17522Q5A is rated for 87A (Tc) continuous drain current, which exceeds a 60A requirement. The device will operate safely at lower current levels. Verify that gate drive voltage (4.5V to 10V) and thermal management remain adequate for your circuit.

Q: What does ROHS3 compliance mean for substitution?

A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. All listed substitutes are ROHS3 compliant, ensuring regulatory compatibility with the original STL66N3LLH5.

Q: Why is operating temperature range important for substitution?

A: STL66N3LLH5 operates to 175°C junction temperature. All listed substitutes operate to 150°C maximum. If your application requires sustained operation above 150°C junction temperature, no substitute from this list is suitable. Consult the manufacturer for higher-temperature alternatives.

Q: How does gate charge (Qg) affect circuit performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. Higher Qg requires more gate drive current and increases switching losses. STL66N3LLH5 has 12nC Qg. Substitutes range from 4.3nC (CSD17522Q5A) to 42nC (DMN3009SFG-7). Lower Qg improves switching efficiency; higher Qg may require gate driver redesign.

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