STL60NH3LL N-Channel 30V 30A MOSFET Equivalent & Substitute Parts

Part Overview

The STL60NH3LL is an N-Channel 30V 30A MOSFET manufactured by STMicroelectronics in the STripFET™ series. This device is rated for 60W power dissipation and is housed in a PowerFlat™ (5x6) surface mount package. The part is currently classified as obsolete, making identification of equivalent and substitute components essential for ongoing design support and production continuity. Substitute parts must maintain compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and thermal performance parameters while accommodating the surface mount package requirements.

Key Parameters

Parameter	STL60NH3LL	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	30	A (Tc)
Rds On (Max) @ Id, Vgs	8.5 mOhm @ 8A, 10V	mOhm
Power Dissipation (Max)	60	W (Tc)
Gate Charge (Qg) (Max) @ Vgs	24	nC @ 4.5V
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-PowerVDFN	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STL60NH3LL is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must support 30A at Tc (case temperature)
On-Resistance (Rds On): Must not exceed 8.5 mOhm at specified gate voltage to maintain thermal performance
Gate Charge (Qg): Lower values reduce switching losses; values up to 24 nC are acceptable
Power Dissipation: Must support minimum 60W at Tc

Mechanical Compatibility Requirements:

Mounting Type: Surface Mount only
Package Form Factor: 8-pin power packages (PowerVDFN, DFN, VSONP, LFPAK56, HSMT variants)
Pin Configuration: Compatible with 8-pin power MOSFET layouts

Compliance Requirements:

RoHS3 Compliance: All substitutes must maintain ROHS3 compliance
Moisture Sensitivity Level: MSL 1 (Unlimited) preferred for manufacturing flexibility
Operating Temperature: Minimum -55°C to 150°C range required

Substitute parts are grouped into two categories based on thermal performance and current handling:

Category A (High Current, High Power Dissipation): Parts rated 65A–87A (Tc) with power dissipation 31W–51W (Tc). These provide direct thermal and electrical equivalence or superior performance.

Category B (Moderate Current): Parts rated 10A–16A (Ta) with lower power dissipation. These are suitable for applications where the full 30A continuous current is not required.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Package	Status
STL60NH3LL	STMicroelectronics	30	30	8.5 @ 8A, 10V	24 @ 4.5V	60 (Tc)	8-PowerVDFN	Obsolete
AON6414A	Alpha & Omega Semiconductor	30	30	8 @ 20A, 10V	24 @ 10V	31 (Tc)	8-DFN (5x6)	Active
BSC090N03LSGATMA1	Infineon Technologies	30	48	9 @ 30A, 10V	18 @ 10V	32 (Tc)	8-PowerTDFN	Active
CSD17302Q5A	Texas Instruments	30	87	7.9 @ 14A, 8V	7 @ 4.5V	3 (Ta)	8-PowerTDFN	Active
CSD17307Q5A	Texas Instruments	30	73	10.5 @ 11A, 8V	5.2 @ 4.5V	3 (Ta)	8-PowerTDFN	Active
CSD17322Q5A	Texas Instruments	30	87	8.8 @ 14A, 8V	4.3 @ 4.5V	3 (Ta)	8-PowerTDFN	Active
CSD17507Q5A	Texas Instruments	30	65	10.8 @ 11A, 10V	3.6 @ 4.5V	3 (Ta)	8-PowerTDFN	Active
CSD17522Q5A	Texas Instruments	30	87	8.1 @ 14A, 10V	4.3 @ 4.5V	3 (Ta)	8-PowerTDFN	Active
CSD17527Q5A	Texas Instruments	30	65	10.8 @ 11A, 10V	3.4 @ 4.5V	3 (Ta)	8-PowerTDFN	Active
PSMN7R0-30YL,115	Nexperia USA Inc.	30	76	7 @ 15A, 10V	22 @ 10V	51 (Tc)	SC-100, SOT-669	Not For New Designs
RQ3E100BNTB	Rohm Semiconductor	30	10	10.4 @ 10A, 10V	22 @ 10V	2 (Ta)	8-PowerVDFN	Active

Engineering Selection Recommendations

Primary Substitutes (Active Status, Full Electrical Equivalence):

The AON6414A from Alpha & Omega Semiconductor is the closest direct substitute. It matches the STL60NH3LL in drain-source voltage (30V), continuous drain current (30A at Tc), and gate charge (24 nC). The on-resistance is superior (8 mOhm vs. 8.5 mOhm), and the part is in active production status with ROHS3 compliance and MSL 1 rating. The 8-DFN (5x6) package is mechanically compatible with the original PowerFlat™ footprint.

Secondary Substitutes (Active Status, Enhanced Performance):

The Texas Instruments NexFET™ series (CSD17302Q5A, CSD17307Q5A, CSD17322Q5A, CSD17507Q5A, CSD17522Q5A, CSD17527Q5A) provides superior electrical performance with higher continuous drain current ratings (65A–87A at Tc), lower gate charge (3.4–7 nC), and improved on-resistance characteristics. All devices maintain 30V Vdss rating and are ROHS3 compliant. These parts are suitable for applications requiring enhanced thermal performance or higher current capacity. The 8-PowerTDFN package is compatible with standard 8-pin power MOSFET layouts.

The BSC090N03LSGATMA1 from Infineon Technologies (OptiMOS™ series) offers 48A continuous drain current at Tc with 9 mOhm on-resistance and reduced gate charge (18 nC). This part provides a balanced alternative with active production status and ROHS3 compliance.

Alternative Substitute (Not For New Designs):

The PSMN7R0-30YL,115 from Nexperia USA Inc. is classified as "Not For New Designs" and should be used only for legacy system support or repair applications. Although it provides 76A continuous drain current and 51W power dissipation (matching the original thermal envelope), its design status restricts use in new product development.

Limited Current Applications:

The RQ3E100BNTB from Rohm Semiconductor is rated for 10A continuous drain current and is suitable only for applications where the full 30A capacity of the STL60NH3LL is not required. This part maintains the 8-PowerVDFN package form factor and ROHS3 compliance but is not recommended as a general substitute due to reduced current handling capability.

Compliance Verification:

All recommended substitutes maintain ROHS3 compliance, MSL 1 moisture sensitivity rating, and operating temperature range of -55°C to 150°C (or higher). Pin configuration and thermal characteristics are compatible with standard PCB layouts designed for 8-pin power MOSFETs.

Frequently Asked Questions (FAQ)

Q: Can the AON6414A directly replace the STL60NH3LL without PCB modifications?

A: The AON6414A is electrically equivalent and mechanically compatible. Both devices use 8-pin power packages with identical pin configurations. The 8-DFN (5x6) footprint of the AON6414A matches the PowerFlat™ (5x6) footprint of the STL60NH3LL. No PCB layout changes are required.

Q: What is the difference between the Texas Instruments NexFET™ parts listed?

A: The NexFET™ series parts differ in continuous drain current ratings and on-resistance characteristics. CSD17302Q5A and CSD17322Q5A are rated for 87A (Tc), while CSD17307Q5A is rated for 73A (Tc), and CSD17507Q5A and CSD17527Q5A are rated for 65A (Tc). All maintain 30V Vdss and are suitable for high-current applications. Selection depends on specific current requirements and thermal design constraints.

Q: Why do some substitute parts show lower power dissipation ratings?

A: Power dissipation is specified at different reference temperatures. The STL60NH3LL specifies 60W at Tc (case temperature), while some Texas Instruments parts specify 3W at Ta (ambient temperature). These are not directly comparable metrics. Thermal performance should be evaluated using on-resistance (Rds On) and junction-to-case thermal resistance (Rθjc) from device datasheets.

Q: Is the PSMN7R0-30YL,115 suitable for new designs?

A: No. The PSMN7R0-30YL,115 is classified as "Not For New Designs" by the manufacturer. This part should be used only for legacy system support, repair, or replacement of existing installations. For new product development, select from the active status alternatives listed.

Q: What package considerations apply when substituting these parts?

A: All recommended substitutes use 8-pin surface mount power packages (DFN, VSONP, LFPAK56, or HSMT variants). These packages are mechanically and electrically compatible with standard 8-pin power MOSFET PCB layouts. Verify that the specific package footprint matches your PCB design before component selection. Pin numbering and thermal pad configuration are consistent across all listed alternatives.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with modern manufacturing processes and environmental regulations.

Q: Which substitute offers the best on-resistance performance?

A: The PSMN7R0-30YL,115 provides the lowest on-resistance at 7 mOhm (@ 15A, 10V), followed by the CSD17302Q5A at 7.9 mOhm (@ 14A, 8V). However, the PSMN7R0-30YL,115 is not recommended for new designs. Among active status parts, the CSD17302Q5A offers superior on-resistance performance.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge affects switching speed and power loss in the gate drive circuit. Lower gate charge values (3.4–7 nC in the NexFET™ series) reduce switching losses compared to the original STL60NH3LL (24 nC). This results in improved efficiency in high-frequency switching applications. Selection depends on the specific gate drive circuit design and switching frequency requirements.

Q: Can the RQ3E100BNTB be used as a substitute?

A: The RQ3E100BNTB is suitable only for applications where continuous drain current does not exceed 10A. It is not a general substitute for the STL60NH3LL due to its significantly lower current rating (10A vs. 30A). Use this part only when application requirements permit reduced current capacity.

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