STL50NH3LL N-Channel 30V 27A MOSFET Equivalent & Substitute Parts

Part Overview

The STL50NH3LL is an N-Channel 30V 27A MOSFET manufactured by STMicroelectronics in the STripFET™ series. This device is rated for 60W power dissipation and features a PowerFlat™ (5x6) surface mount package. The part is currently classified as obsolete, making identification of equivalent and substitute components essential for ongoing design support, production continuity, and system maintenance.

Substitute parts must maintain compatibility across critical electrical parameters including drain-source voltage rating, continuous drain current capability, on-resistance characteristics, and thermal performance specifications. Package compatibility and mounting type are also primary considerations for direct board-level substitution.

Key Parameters

Parameter	STL50NH3LL	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C	27	A (Tc)
On-Resistance (Rds On) @ 6.5A, 10V	13	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1	V (Max)
Gate Charge (Qg) @ 4.5V	12	nC (Max)
Input Capacitance (Ciss) @ 25V	965	pF (Max)
Power Dissipation (Max)	60	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	PowerFlat™ (5x6)	8-PowerVDFN
Mounting Type	Surface Mount	-
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution logic for the STL50NH3LL is based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): Minimum 30V rating required
Continuous Drain Current (Id): Minimum 27A at Tc required
On-Resistance (Rds On): Maximum 13mOhm at specified gate voltage
Power Dissipation: Minimum 60W at Tc required
Operating Temperature Range: -55°C to 150°C (TJ)
Mounting Type: Surface Mount
Package Compatibility: 8-pin power package configurations

Secondary Compatibility Factors:

Gate Charge (Qg): Lower values preferred for reduced switching losses
Input Capacitance (Ciss): Lower values preferred for faster switching
Gate Threshold Voltage (Vgs(th)): Compatibility with existing gate drive circuits
RoHS3 Compliance and MSL Level 1 rating

Substitute parts are grouped into two categories based on electrical performance alignment:

Category A - Direct Electrical Equivalents (30V Rating, 27A+ Continuous Current): Parts meeting or exceeding the STL50NH3LL specifications across all critical parameters with minimal design impact.

Category B - Functional Alternatives (30V Rating, Lower Continuous Current or Enhanced Performance): Parts with 30V Vdss rating but with current ratings below 27A (Ta) or enhanced thermal performance characteristics that may require circuit evaluation for specific applications.

Parameter Comparison

Parameter	STL50NH3LL	BSC018N04LSGATMA1	BSC019N04NSGATMA1	BSC120N03MSGATMA1	CSD17327Q5A	DMS3014SFG-7	RS1E130GNTB
Manufacturer	STMicroelectronics	Infineon	Infineon	Infineon	Texas Instruments	Diodes Inc.	Rohm
Vdss (V)	30	40	40	30	30	30	30
Id @ 25°C (A)	27 (Tc)	30 (Ta) / 100 (Tc)	30 (Ta) / 100 (Tc)	11 (Ta) / 39 (Tc)	65 (Tc)	9.5 (Ta)	13 (Ta)
Rds On (mOhm)	13 @ 6.5A, 10V	1.8 @ 50A, 10V	1.9 @ 50A, 10V	12 @ 30A, 10V	12.2 @ 11A, 8V	13 @ 10.4A, 10V	11.7 @ 13A, 10V
Qg (nC)	12 @ 4.5V	150 @ 10V	108 @ 10V	20 @ 10V	3.4 @ 4.5V	45.7 @ 10V	7.9 @ 10V
Ciss (pF)	965 @ 25V	12000 @ 20V	8800 @ 20V	1500 @ 15V	506 @ 15V	4310 @ 15V	420 @ 15V
Power Dissipation (W)	60 (Tc)	125 (Tc)	125 (Tc)	28 (Tc)	3 (Ta)	1 (Ta)	22.2 (Tc)
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-PowerVDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerVDFN	8-PowerTDFN
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes	Yes
MSL Level	1	1	1	1	1	1	1

Engineering Selection Recommendations

BSC018N04LSGATMA1 (Infineon OptiMOS™)

This part provides superior electrical performance with 40V Vdss rating, 100A continuous drain current at Tc, and significantly lower on-resistance (1.8mOhm). The higher voltage rating provides additional design margin. Product status is Active with full RoHS3 compliance and MSL Level 1. Packaging is 8-PowerTDFN (Tape & Reel). This substitute is suitable for applications where enhanced thermal performance and higher current capability are beneficial. Gate charge is elevated at 150nC, requiring gate drive circuit evaluation.

BSC019N04NSGATMA1 (Infineon OptiMOS™)

This part offers 40V Vdss rating with 100A continuous drain current at Tc and 1.9mOhm on-resistance. Product status is Active with RoHS3 compliance and MSL Level 1. Packaging is 8-PowerTDFN (Cut Tape & Digi-Reel®). Gate charge is 108nC at 10V, lower than BSC018N04LSGATMA1. This substitute provides voltage margin and current capability with reduced gate charge characteristics.

BSC120N03MSGATMA1 (Infineon OptiMOS™)

This part maintains 30V Vdss rating with 39A continuous drain current at Tc and 12mOhm on-resistance. Product status is Active with RoHS3 compliance and MSL Level 1. Packaging is 8-PowerTDFN (Tape & Reel). Gate charge is 20nC at 10V with input capacitance of 1500pF. This substitute provides closest electrical alignment to the STL50NH3LL with reduced gate charge and capacitance, minimizing switching loss impact.

CSD17327Q5A (Texas Instruments NexFET™)

This part maintains 30V Vdss rating with 65A continuous drain current at Tc and 12.2mOhm on-resistance. Product status is Active with RoHS3 compliance and MSL Level 1. Packaging is 8-VSONP (5x6), matching the STL50NH3LL physical footprint. Gate charge is significantly lower at 3.4nC with input capacitance of 506pF. This substitute offers superior switching characteristics and identical package dimensions.

DMS3014SFG-7 (Diodes Incorporated)

This part maintains 30V Vdss rating with 9.5A continuous drain current at Ta and 13mOhm on-resistance. Product status is Active with RoHS3 compliance and MSL Level 1. Packaging is 8-PowerVDFN (Tape & Reel). This part includes integrated Schottky diode (body). Current rating is significantly lower than the STL50NH3LL, limiting application scope to lower-current designs.

RS1E130GNTB (Rohm Semiconductor)

This part maintains 30V Vdss rating with 13A continuous drain current at Ta and 11.7mOhm on-resistance. Product status is Active with RoHS3 compliance and MSL Level 1. Packaging is 8-HSOP (Cut Tape & Digi-Reel®). Gate charge is 7.9nC with input capacitance of 420pF. Current rating is below the STL50NH3LL specification, suitable for lower-current applications.

Frequently Asked Questions (FAQ)

Q: Can BSC018N04LSGATMA1 or BSC019N04NSGATMA1 directly replace STL50NH3LL in existing designs?

A: Both parts meet or exceed the STL50NH3LL electrical specifications with higher voltage ratings (40V vs. 30V) and superior current handling (100A Tc vs. 27A Tc). However, gate charge is significantly higher (150nC and 108nC respectively vs. 12nC), requiring evaluation of gate drive circuit performance. Package type differs (8-PowerTDFN vs. 8-PowerVDFN), necessitating PCB layout verification. Direct substitution is possible with circuit validation.

Q: What is the primary advantage of CSD17327Q5A over other substitutes?

A: CSD17327Q5A maintains identical package dimensions (8-VSONP 5x6) to the STL50NH3LL, enabling direct PCB footprint compatibility. It provides 65A continuous drain current at Tc with significantly lower gate charge (3.4nC) and input capacitance (506pF), resulting in reduced switching losses and improved efficiency. The 30V Vdss rating matches the original specification exactly.

Q: Why do some substitutes have lower continuous drain current ratings than the STL50NH3LL?

A: DMS3014SFG-7 (9.5A Ta) and RS1E130GNTB (13A Ta) are rated for lower continuous current due to different thermal package designs and power dissipation capabilities. These parts are suitable for applications with lower current requirements. Selection depends on actual circuit current demands rather than maximum device capability.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The STL50NH3LL has 12nC at 4.5V. Substitutes with higher gate charge (BSC018N04LSGATMA1 at 150nC, BSC019N04NSGATMA1 at 108nC) require higher gate drive current or longer switching times. Substitutes with lower gate charge (CSD17327Q5A at 3.4nC, RS1E130GNTB at 7.9nC) enable faster switching and reduced gate drive power consumption.

Q: Are all substitute parts RoHS3 compliant and MSL Level 1?

A: Yes. All substitute parts listed are RoHS3 compliant and rated MSL Level 1 (Unlimited moisture sensitivity), matching the STL50NH3LL environmental and regulatory specifications.

Q: What package considerations apply when selecting a substitute?

A: The STL50NH3LL uses 8-PowerVDFN package. CSD17327Q5A uses identical 8-VSONP (5x6) package, enabling direct PCB substitution. Other substitutes use 8-PowerTDFN or 8-HSOP packages with different physical dimensions and pin configurations, requiring PCB layout modification. Verify thermal pad dimensions and pin pitch compatibility with existing board designs.

Q: Which substitute provides the closest electrical match to STL50NH3LL?

A: BSC120N03MSGATMA1 provides the closest electrical alignment with 30V Vdss (exact match), 39A continuous drain current at Tc (exceeds 27A requirement), 12mOhm on-resistance (matches specification), and significantly lower gate charge (20nC vs. 12nC). This part requires minimal circuit redesign while maintaining active product status and full compliance certifications.

Q: Can I use a 40V-rated substitute in a 30V application?

A: Yes. Higher voltage-rated devices (BSC018N04LSGATMA1 and BSC019N04NSGATMA1 at 40V) operate safely in 30V applications, providing additional voltage margin and design headroom. No circuit modification is required for voltage compatibility. Verify gate drive voltage compatibility, as these parts specify ±20V maximum gate voltage versus ±16V for the STL50NH3LL.

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