STL4P2UH7 Equivalent & Substitute Parts

Part Overview

The STL4P2UH7 is a P-Channel MOSFET manufactured by STMicroelectronics, rated for 20V drain-to-source voltage with 4A continuous drain current at 25°C. This device is packaged in a Surface Mount PowerFlat™ (2x2) configuration and is part of the DeepGATE™ and STripFET™ VII series. The STL4P2UH7 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, production continuity, and component sourcing.

Substiute Parts

STL4P2UH7

STMicroelectronicsIn Stock: 894STL4P2UH7 Datasheet

Current PartRFQ

IRLHS2242TRPBF

Infineon TechnologiesIn Stock: 71120IRLHS2242TRPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STL4P2UH7 is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 20V minimum
• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Mounting Type: Surface Mount
• RoHS Compliance: ROHS3 Compliant
• Moisture Sensitivity Level: 1 (Unlimited)

Performance Parameters:

• Continuous Drain Current (Id) at 25°C: Must meet or exceed 4A
• On-State Resistance (Rds On): Must not exceed 100 mOhm at specified conditions
• Gate Threshold Voltage (Vgs(th)): Must not exceed 1V at specified conditions
• Power Dissipation: Must support thermal requirements of the application

The IRLHS2242TRPBF meets all critical matching parameters and exceeds performance specifications, making it a valid substitute for the obsolete STL4P2UH7.

Parameter Comparison

Engineering Selection Recommendations

The IRLHS2242TRPBF is a suitable substitute for the obsolete STL4P2UH7 based on the following engineering criteria:

Voltage and Current Compatibility: The IRLHS2242TRPBF maintains the same 20V Vdss rating as the STL4P2UH7 and provides higher continuous drain current capability (7.2A at Ta, 15A at Tc), exceeding the original 4A specification. This ensures the substitute can handle the same voltage domain while providing improved current headroom.

On-State Resistance Performance: The IRLHS2242TRPBF exhibits significantly lower on-state resistance (31 mOhm @ 8.5A, 4.5V) compared to the STL4P2UH7 (100 mOhm @ 2A, 4.5V), resulting in reduced power dissipation and improved thermal performance in switching applications.

Regulatory and Compliance Alignment: Both devices are ROHS3 Compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings, ensuring equivalent handling and storage requirements. Both devices are classified under the same HTSUS code (8541.29.0095) and ECCN (EAR99), confirming regulatory equivalence.

Product Status and Availability: The IRLHS2242TRPBF is classified as Active with 71,100 pieces in stock, providing long-term availability and production continuity compared to the obsolete STL4P2UH7 status.

Package Consideration: The IRLHS2242TRPBF uses a 6-PQFN (2x2) (DFN2020) package, which is mechanically compatible with the 6-PowerWDFN package of the STL4P2UH7 for surface mount applications. PCB layout verification is required to confirm footprint compatibility in specific designs.

Frequently Asked Questions (FAQ)

Q: Can the IRLHS2242TRPBF directly replace the STL4P2UH7 in all applications?

A: The IRLHS2242TRPBF meets all critical electrical parameters (20V Vdss, P-Channel MOSFET, surface mount) and exceeds performance specifications. However, PCB footprint compatibility must be verified, as the substitute uses a 6-PQFN (2x2) package versus the original 6-PowerWDFN package. Physical layout and pin assignment confirmation is required before implementation.

Q: What are the key differences in electrical performance between these devices?

A: The IRLHS2242TRPBF provides superior performance in three areas: (1) Continuous drain current is increased from 4A to 7.2A (Ta) or 15A (Tc), (2) On-state resistance is reduced from 100 mOhm to 31 mOhm, and (3) Maximum gate voltage tolerance is increased from ±8V to ±12V. These improvements result in lower power dissipation and enhanced thermal performance.

Q: Are there any thermal management differences between the STL4P2UH7 and IRLHS2242TRPBF?

A: The IRLHS2242TRPBF demonstrates improved thermal characteristics with maximum power dissipation of 9.6W (Tc) compared to 2.4W (Tc) for the STL4P2UH7. The substitute's lower on-state resistance contributes to reduced heat generation at equivalent current levels, improving overall thermal efficiency in the application.

Q: Do both devices have the same moisture sensitivity and handling requirements?

A: Yes. Both the STL4P2UH7 and IRLHS2242TRPBF carry MSL 1 (Unlimited) ratings, indicating identical moisture sensitivity levels and handling requirements. No changes to storage, transport, or assembly procedures are necessary from a moisture sensitivity perspective.

Q: What is the operating temperature range difference between these devices?

A: The STL4P2UH7 specifies a maximum junction temperature (TJ) of 150°C. The IRLHS2242TRPBF provides an extended operating temperature range of -55°C to 150°C (TJ), offering improved performance in low-temperature environments while maintaining the same upper temperature limit.

Q: Are both devices RoHS compliant?

A: Yes. Both the STL4P2UH7 and IRLHS2242TRPBF are ROHS3 Compliant and carry identical REACH Status (REACH Unaffected) and ECCN (EAR99) classifications, ensuring equivalent regulatory compliance for procurement and deployment.

Q: What should be verified before implementing the IRLHS2242TRPBF as a substitute?

A: Verification should include: (1) PCB footprint compatibility between 6-PowerWDFN and 6-PQFN (2x2) packages, (2) Pin assignment alignment in the circuit schematic, (3) Thermal management adequacy given the improved power dissipation characteristics, and (4) Gate drive voltage compatibility within the ±12V maximum rating of the substitute.