STL3N10F7 Equivalent & Substitute Parts

Part Overview

The STL3N10F7 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 100V drain-to-source voltage with 4A continuous drain current at 25°C. This device is housed in a PowerFlat™ (2x2) surface mount package and is part of the DeepGATE™ and STripFET™ VII series. The part is currently Active in product status with 6105 units in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the application's thermal, voltage, and current requirements.

Substiute Parts

STL3N10F7
STMicroelectronicsIn Stock: 6176STL3N10F7 Datasheet
STL3N10F7
Current Part
RF4P060BGTCR
Rohm SemiconductorIn Stock: 3803RF4P060BGTCR Datasheet
RF4P060BGTCR
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Key Parameters

Parameter STL3N10F7
Drain-to-Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 4A (Tc)
RDS(on) Max @ Id, Vgs 70 mOhm @ 2A, 10V
Gate Threshold Voltage (Vgs(th)) Max @ Id 4.5V @ 250µA
Gate Charge (Qg) Max @ Vgs 7.8 nC @ 10V
Input Capacitance (Ciss) Max @ Vds 408 pF @ 25V
Power Dissipation Max 2.4W (Tc)
Operating Temperature Range -55°C to 150°C (TJ)
Package Type PowerFlat™ (2x2) / 6-PowerWDFN
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the STL3N10F7 are identified based on the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute must maintain a Drain-to-Source Voltage (Vdss) rating of 100V or greater to ensure safe operation in the same circuit topology.

Current Capability: The substitute must support a continuous drain current (Id) rating equal to or exceeding the application requirement. The STL3N10F7 is rated for 4A; substitutes with higher current ratings (such as 6A) remain compatible as they provide additional design margin.

On-Resistance (RDS(on)): The substitute's maximum on-resistance must be comparable or lower to maintain similar power dissipation and thermal characteristics. Lower on-resistance values improve efficiency and reduce heat generation.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitutes with similar or lower values ensure compatible gate driver performance.

Package and Mounting: Surface mount compatibility and thermal characteristics must align with the application's PCB layout and thermal management design.

Compliance and Status: Both the main part and substitute must maintain Active product status and equivalent regulatory compliance (RoHS3, REACH Unaffected, EAR99).

Parameter Comparison

Parameter STL3N10F7 (STMicroelectronics) RF4P060BGTCR (Rohm Semiconductor)
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 100 V 100 V
Continuous Drain Current (Id) @ 25°C 4A (Tc) 6A (Ta)
RDS(on) Max @ Id, Vgs 70 mOhm @ 2A, 10V 53 mOhm @ 6A, 10V
Gate Threshold Voltage (Vgs(th)) Max @ Id 4.5V @ 250µA 2.5V @ 1mA
Gate Charge (Qg) Max @ Vgs 7.8 nC @ 10V 6.7 nC @ 10V
Input Capacitance (Ciss) Max @ Vds 408 pF @ 25V 305 pF @ 50V
Power Dissipation Max 2.4W (Tc) 2W (Ta)
Maximum Gate Voltage (Vgs) ±20V ±20V
Operating Temperature Range -55°C to 150°C (TJ) Up to 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package Type PowerFlat™ (2x2) / 6-PowerWDFN DFN2020-8S / 8-PowerUDFN
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited)
RoHS Status ROHS3 Compliant Not specified in data
REACH Status REACH Unaffected REACH Unaffected
Product Status Active Active

Engineering Selection Recommendations

STL3N10F7 (Primary Part): This part is the specified component for the application. It is Active in product status, ROHS3 compliant, and REACH Unaffected. Inventory availability is 6105 units. Use this part when design specifications explicitly call for the STL3N10F7 or when the PowerFlat™ (2x2) package form factor is required.

RF4P060BGTCR (Substitute Part): This Rohm Semiconductor device is electrically compatible with the STL3N10F7 for applications requiring 100V, 4A N-Channel MOSFET functionality. The RF4P060BGTCR offers superior electrical characteristics: 6A continuous drain current (50% higher than STL3N10F7), lower on-resistance (53 mOhm versus 70 mOhm), and lower gate charge (6.7 nC versus 7.8 nC). The part is Active in product status with 3721 units in stock and maintains REACH Unaffected compliance.

Package Consideration: The RF4P060BGTCR uses a DFN2020-8S package (8-PowerUDFN), which differs from the STL3N10F7's PowerFlat™ (2x2) package (6-PowerWDFN). PCB layout modifications are required for substitution. Thermal performance and footprint compatibility must be evaluated for the specific application.

Selection Criteria: Choose the RF4P060BGTCR when higher current margin, lower on-resistance, or improved switching characteristics are beneficial and the DFN2020-8S package is compatible with the PCB design. Retain the STL3N10F7 when the PowerFlat™ (2x2) package is a design requirement or when existing inventory and supply chain considerations favor the STMicroelectronics device.

Frequently Asked Questions (FAQ)

Q: Can the RF4P060BGTCR directly replace the STL3N10F7 without circuit modifications?

A: Electrical substitution is valid because both devices share identical voltage ratings (100V Vdss) and the RF4P060BGTCR exceeds the current requirement (6A versus 4A). However, the package footprint differs (DFN2020-8S versus PowerFlat™ 2x2), requiring PCB layout changes. Gate drive characteristics are compatible due to similar gate charge and threshold voltage ranges.

Q: What are the key differences in on-resistance between these parts?

A: The STL3N10F7 has a maximum on-resistance of 70 mOhm at 2A and 10V gate voltage. The RF4P060BGTCR has a maximum on-resistance of 53 mOhm at 6A and 10V gate voltage. The lower on-resistance of the RF4P060BGTCR results in reduced power dissipation and improved thermal performance in high-current applications.

Q: Are both parts suitable for the same operating temperature range?

A: Both parts operate to 150°C junction temperature (TJ). The STL3N10F7 specifies a lower operating limit of -55°C, while the RF4P060BGTCR data provided does not specify a lower temperature limit. For applications requiring operation below -55°C, the STL3N10F7 is the specified choice.

Q: What is the impact of different gate charge values on circuit design?

A: The STL3N10F7 has a gate charge of 7.8 nC at 10V, while the RF4P060BGTCR has 6.7 nC at 10V. Lower gate charge reduces gate drive power requirements and enables faster switching transitions. Both values are sufficiently similar that existing gate driver circuits designed for the STL3N10F7 will function with the RF4P060BGTCR without modification.

Q: How do the input capacitance values affect circuit performance?

A: The STL3N10F7 has an input capacitance of 408 pF at 25V, while the RF4P060BGTCR has 305 pF at 50V. Lower input capacitance reduces the capacitive load on the gate driver and improves switching speed. The RF4P060BGTCR's lower capacitance provides a performance advantage in high-frequency switching applications.

Q: Are there any compliance or regulatory differences between these parts?

A: Both parts are REACH Unaffected and carry EAR99 ECCN classification. The STL3N10F7 is explicitly ROHS3 compliant. The RF4P060BGTCR compliance status is not specified in the provided data. Verify RoHS compliance with the supplier if regulatory certification is required for the application.

Q: What packaging considerations must be addressed for substitution?

A: The STL3N10F7 uses a 6-pin PowerFlat™ (2x2) package, while the RF4P060BGTCR uses an 8-pin DFN2020-8S package. The different pin counts and footprints require complete PCB redesign. Thermal pad dimensions and solder joint design may differ, affecting thermal performance. Evaluate thermal management requirements for both packages in the target application.

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