STL15DN4F5 Equivalent & Substitute Parts

Part Overview

The STL15DN4F5 is a dual N-channel MOSFET manufactured by STMicroelectronics, configured as a 2N-channel device with a maximum drain-source voltage rating of 40V and continuous drain current of 60A. This component operates within the STripFET™ V series and is housed in a PowerFlat™ (5x6) surface mount package. The device maintains active product status and carries automotive-grade qualification under AEC-Q101 standards.

Substitute parts are identified when equivalent electrical performance parameters align with the main device specifications while accommodating different packaging configurations or manufacturer sourcing requirements. The substitute devices listed below are Infineon Technologies OptiMOS™ series MOSFETs that share critical electrical characteristics with the STL15DN4F5.

Key Parameters

Parameter	Value	Unit
Drain-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	60	A
On-State Resistance (Rds On) Max	9	mOhm @ 7.5A, 10V
Gate Threshold Voltage (Vgs(th)) Max	4	V @ 250µA
Gate Charge (Qg) Max	25	nC @ 10V
Input Capacitance (Ciss) Max	1550	pF @ 25V
Maximum Power Dissipation	60	W
Operating Temperature Range	-55 to 175	°C (TJ)
Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Package Type	8-PowerVDFN
Mounting Type	Surface Mount
Grade	Automotive
Qualification	AEC-Q101
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the STL15DN4F5 with Infineon OptiMOS™ series devices is based on alignment of the following critical electrical parameters:

Voltage Rating Compatibility: All substitute parts maintain the same 40V drain-source voltage (Vdss) rating, ensuring compatibility with circuit voltage specifications.

Configuration Match: All substitute parts are configured as dual N-channel (2N-channel) MOSFETs with logic-level gate drive capability, matching the functional topology of the main device.

Operating Temperature Range: All substitute parts operate across the identical temperature range of -55°C to 175°C (TJ), maintaining thermal performance requirements.

Automotive Qualification: All substitute parts carry AEC-Q101 automotive qualification and are manufactured to automotive-grade standards, matching the qualification level of the STL15DN4F5.

Compliance Standards: All substitute parts are ROHS3 compliant with MSL rating of 1 (Unlimited), matching the environmental and handling requirements of the main device.

Current Rating Consideration: The substitute parts are rated for 20A continuous drain current, which is lower than the 60A rating of the STL15DN4F5. Substitution is valid only in applications where the actual operating current does not exceed 20A.

On-State Resistance: The substitute parts exhibit on-state resistance values (8.2 to 11.6 mOhm) that are comparable to the main device (9 mOhm), ensuring similar power dissipation characteristics within the reduced current rating.

Parameter Comparison

Parameter	STL15DN4F5 (Main)	IPG20N04S4L08AATMA1	IPG20N04S4L08ATMA1	IPG20N04S4L11ATMA1
Manufacturer	STMicroelectronics	Infineon Technologies	Infineon Technologies	Infineon Technologies
Series	STripFET™ V	OptiMOS™	OptiMOS™	OptiMOS™
Vdss (V)	40	40	40	40
Id @ 25°C (A)	60	20	20	20
Rds On Max (mOhm)	9 @ 7.5A, 10V	8.2 @ 17A, 10V	8.2 @ 17A, 10V	11.6 @ 17A, 10V
Vgs(th) Max (V)	4 @ 250µA	2.2 @ 22µA	2.2 @ 22µA	2.2 @ 15µA
Qg Max (nC)	25 @ 10V	39 @ 10V	39 @ 10V	26 @ 10V
Ciss Max (pF)	1550 @ 25V	3050 @ 25V	3050 @ 25V	1990 @ 25V
Power Max (W)	60	54	54	41
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Configuration	2 N-Channel	2 N-Channel	2 N-Channel	2 N-Channel
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate
Package / Case	8-PowerVDFN	8-PowerVDFN	8-PowerVDFN	8-PowerVDFN
Mounting Type	Surface Mount	Surface Mount, Wettable Flank	Surface Mount	Surface Mount
Grade	Automotive	Automotive	Automotive	Automotive
Qualification	AEC-Q101	AEC-Q101	AEC-Q101	AEC-Q101
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Packaging	Cut Tape (CT) & Digi-Reel®	Tape & Reel (TR)	Tape & Reel (TR)	Cut Tape (CT) & Digi-Reel®

Engineering Selection Recommendations

Primary Substitution Criteria: All three substitute parts meet the fundamental electrical and compliance requirements for substitution with the STL15DN4F5. Selection among the three Infineon devices depends on application-specific current requirements and packaging availability.

Current Rating Limitation: The substitute parts are rated for 20A continuous drain current. Applications operating the STL15DN4F5 at currents exceeding 20A cannot use these substitutes. Verify actual operating current in the target application before substitution.

Packaging Availability: The IPG20N04S4L11ATMA1 is available in Cut Tape (CT) & Digi-Reel® packaging, matching the packaging format of the STL15DN4F5. The IPG20N04S4L08AATMA1 and IPG20N04S4L08ATMA1 are supplied in Tape & Reel (TR) format, which may require different handling and procurement workflows.

On-State Resistance Performance: The IPG20N04S4L08AATMA1 and IPG20N04S4L08ATMA1 offer lower on-state resistance (8.2 mOhm) compared to the IPG20N04S4L11ATMA1 (11.6 mOhm), resulting in reduced power dissipation at equivalent current levels. The IPG20N04S4L11ATMA1 provides a middle-ground option with slightly higher resistance but lower gate charge and input capacitance.

Gate Charge Characteristics: The IPG20N04S4L11ATMA1 exhibits the lowest gate charge (26 nC), which may provide faster switching performance in gate-drive-limited applications. The IPG20N04S4L08AATMA1 and IPG20N04S4L08ATMA1 have higher gate charge (39 nC), which may require higher gate drive current.

Thermal Considerations: All substitute parts maintain the same operating temperature range (-55°C to 175°C). The lower maximum power rating of the IPG20N04S4L11ATMA1 (41W) compared to the main device (60W) reflects its lower current rating and should be considered in thermal design calculations.

Compliance and Qualification: All substitute parts carry identical automotive-grade qualification (AEC-Q101), ROHS3 compliance, and MSL rating (1 - Unlimited), ensuring compatibility with automotive supply chain requirements and environmental standards.

Frequently Asked Questions (FAQ)

Q: Can the STL15DN4F5 be directly replaced with any of the Infineon substitute parts?

A: Direct replacement is valid only in applications where the actual operating drain current does not exceed 20A. The substitute parts are rated for 20A continuous drain current, which is lower than the 60A rating of the STL15DN4F5. Verify the application's current requirements before substitution.

Q: What is the primary difference between the three Infineon substitute parts?

A: The three Infineon parts differ in on-state resistance, gate charge, input capacitance, and packaging format. The IPG20N04S4L08AATMA1 and IPG20N04S4L08ATMA1 offer lower on-state resistance (8.2 mOhm) but higher gate charge (39 nC). The IPG20N04S4L11ATMA1 has higher on-state resistance (11.6 mOhm) but lower gate charge (26 nC) and is available in Cut Tape & Digi-Reel® packaging matching the main device.

Q: Are all substitute parts automotive-qualified?

A: Yes. All three Infineon substitute parts carry AEC-Q101 automotive qualification and are manufactured to automotive-grade standards, matching the qualification level of the STL15DN4F5.

Q: What is the difference between the IPG20N04S4L08AATMA1 and IPG20N04S4L08ATMA1?

A: Both parts have identical electrical specifications (40V, 20A, 8.2 mOhm Rds On, 39 nC gate charge). The primary difference is the supplier device package designation: IPG20N04S4L08AATMA1 uses PG-TDSON-8-10 (Wettable Flank), while IPG20N04S4L08ATMA1 uses PG-TDSON-8-4. Both are supplied in Tape & Reel (TR) packaging.

Q: Can I use the IPG20N04S4L11ATMA1 as a direct replacement in terms of packaging?

A: The IPG20N04S4L11ATMA1 is available in Cut Tape (CT) & Digi-Reel® packaging, matching the packaging format of the STL15DN4F5. However, the other two Infineon substitutes are supplied in Tape & Reel (TR) format, which may require different procurement and handling procedures.

Q: How do the gate charge characteristics affect circuit performance?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on or off. The IPG20N04S4L11ATMA1 has lower gate charge (26 nC) compared to the IPG20N04S4L08AATMA1 and IPG20N04S4L08ATMA1 (39 nC each). Lower gate charge may enable faster switching in gate-drive-limited applications but requires less gate drive current.

Q: What does the input capacitance (Ciss) parameter indicate?

A: Input capacitance (Ciss) represents the total capacitance seen at the gate terminal and affects gate drive circuit design and switching speed. The STL15DN4F5 has 1550 pF, while the IPG20N04S4L11ATMA1 has 1990 pF and the other two Infineon parts have 3050 pF. Higher input capacitance requires higher gate drive current for equivalent switching speed.

Q: Are there any moisture sensitivity or handling differences?

A: All parts, including the main device and all substitutes, have MSL rating of 1 (Unlimited), indicating no moisture sensitivity limitations. Handling and storage requirements are equivalent across all devices.

Q: What compliance standards apply to all these parts?

A: All parts are ROHS3 compliant and REACH unaffected. All carry automotive-grade qualification under AEC-Q101 standards. All are classified under ECCN EAR99 and HTSUS 8541.29.0095 for export and tariff purposes.

Q: Can I substitute based on voltage rating alone?

A: No. While all parts share the same 40V voltage rating, substitution requires verification of current requirements, on-state resistance performance, gate drive characteristics, and thermal design compatibility. Current rating is the primary limiting factor for these substitutes.

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