STL140N4LLF5 Equivalent & Substitute Parts

Part Overview

The STL140N4LLF5 is an N-Channel 40V 140A MOSFET manufactured by STMicroelectronics in the STripFET™ V series. This surface mount power transistor is designed for high-current switching applications and is rated for continuous drain current of 140A at 25°C (Tc) with a maximum power dissipation of 80W. The device is packaged in PowerFlat™ (5x6) format and maintains Active product status with full RoHS3 compliance. Equivalent and substitute parts are identified when alternative MOSFETs meet the core electrical and mechanical requirements for direct circuit replacement.

Substiute Parts

STL140N4LLF5
STMicroelectronicsIn Stock: 14419STL140N4LLF5 Datasheet
STL140N4LLF5
Current Part
BSC030N04NSGATMA1
Infineon TechnologiesIn Stock: 46010BSC030N04NSGATMA1 Datasheet
BSC030N04NSGATMA1
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BSC035N04LSGATMA1
Infineon TechnologiesIn Stock: 2393BSC035N04LSGATMA1 Datasheet
BSC035N04LSGATMA1
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CSD18501Q5A
Texas InstrumentsIn Stock: 25459CSD18501Q5A Datasheet
CSD18501Q5A
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FDMS8333L
onsemiIn Stock: 35167FDMS8333L Datasheet
FDMS8333L
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IRFH7446TRPBF
Infineon TechnologiesIn Stock: 29283IRFH7446TRPBF Datasheet
IRFH7446TRPBF
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 40 V
Continuous Drain Current (Id) @ 25°C 140 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 2.75 mOhm @ 16A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 1 V @ 250µA
Gate Charge (Qg Max) @ Vgs 45 nC @ 4.5V
Maximum Gate Voltage (Vgs Max) ±22 V
Input Capacitance (Ciss Max) @ Vds 5900 pF @ 25V
Power Dissipation (Max) 80 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the STL140N4LLF5 are qualified based on the following core electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Drain to Source Voltage (Vdss) must equal 40V
  • Continuous Drain Current (Id) at 25°C must support the application requirement; substitutes with Tc ratings of 100A or greater are functionally equivalent for high-current applications
  • On-State Resistance (Rds On) must be within acceptable range for switching loss and thermal management
  • Gate Threshold Voltage (Vgs(th)) must be compatible with drive circuitry
  • Operating Temperature Range must span -55°C to 150°C (TJ)
  • Maximum Gate Voltage (Vgs Max) must accommodate ±22V or greater

Mechanical Compatibility Criteria:

  • Mounting Type must be Surface Mount
  • Package footprint must be compatible with 5x6mm form factor (PowerFlat™, TDSON, VSON, or PQFN variants)
  • RoHS3 Compliance and MSL Level 1 required

All substitute parts listed meet these criteria and are qualified for direct circuit replacement in applications where the STL140N4LLF5 is specified.

Parameter Comparison

Parameter STL140N4LLF5 (STMicroelectronics) BSC035N04LSGATMA1 (Infineon) BSC030N04NSGATMA1 (Infineon) CSD18501Q5A (Texas Instruments) FDMS8333L (onsemi) IRFH7446TRPBF (Infineon)
Vdss 40V 40V 40V 40V 40V 40V
Id @ 25°C (Tc) 140A 100A 100A 100A 76A 85A
Rds On (Max) @ 10V 2.75 mOhm @ 16A 3.5 mOhm @ 50A 3.0 mOhm @ 50A 3.2 mOhm @ 25A 3.1 mOhm @ 22A 3.3 mOhm @ 50A
Vgs(th) (Max) @ Id 1V @ 250µA 2V @ 36µA 4V @ 49µA 2.3V @ 250µA 3V @ 250µA 3.9V @ 100µA
Qg (Max) @ Vgs 45 nC @ 4.5V 64 nC @ 10V 61 nC @ 10V 50 nC @ 10V 64 nC @ 10V 98 nC @ 10V
Vgs (Max) ±22V ±20V ±20V ±20V ±20V ±20V
Ciss (Max) @ Vds 5900 pF @ 25V 5100 pF @ 20V 4900 pF @ 20V 3840 pF @ 20V 4545 pF @ 20V 3174 pF @ 25V
Power Dissipation (Max) 80W (Tc) 69W (Tc) 83W (Tc) 150W (Tc) 69W (Tc) 78W (Tc)
Operating Temperature -55 to 150°C (TJ) -55 to 150°C (TJ) -55 to 150°C (TJ) -55 to 150°C (TJ) -55 to 150°C (TJ) -55 to 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerVDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-TQFN Exposed Pad
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

All substitute parts listed maintain Active product status and full RoHS3 compliance with MSL Level 1 rating, ensuring regulatory and environmental compatibility with the STL140N4LLF5.

BSC035N04LSGATMA1 (Infineon OptiMOS™): This part provides 100A continuous drain current at 25°C (Tc) with 3.5 mOhm on-state resistance. The 69W maximum power dissipation is slightly lower than the main part, making it suitable for applications where thermal headroom is less critical. Gate charge of 64 nC is higher than the main part, resulting in slightly increased switching losses. Available in Cut Tape & Digi-Reel® packaging with 2374 units in stock.

BSC030N04NSGATMA1 (Infineon OptiMOS™): This part delivers 100A continuous drain current at 25°C (Tc) with 3.0 mOhm on-state resistance and 83W maximum power dissipation. The higher power rating and lower on-state resistance provide improved thermal performance. Gate charge of 61 nC is comparable to other substitutes. Available in Tape & Reel packaging with 45991 units in stock.

CSD18501Q5A (Texas Instruments NexFET™): This part offers 100A continuous drain current at 25°C (Tc) with 3.2 mOhm on-state resistance and the highest power dissipation rating of 150W (Tc). The lowest input capacitance of 3840 pF reduces switching losses. Gate charge of 50 nC is the lowest among substitutes, enabling faster switching. Available in Cut Tape & Digi-Reel® packaging with 25400 units in stock.

FDMS8333L (onsemi PowerTrench®): This part provides 76A continuous drain current at 25°C (Tc) with 3.1 mOhm on-state resistance and 69W maximum power dissipation. The lower current rating makes this part suitable for applications with reduced current requirements. Gate charge of 64 nC is comparable to other substitutes. Available in Tape & Reel packaging with 35100 units in stock.

IRFH7446TRPBF (Infineon HEXFET®, StrongIRFET™): This part delivers 85A continuous drain current at 25°C (Tc) with 3.3 mOhm on-state resistance and 78W maximum power dissipation. The lowest input capacitance of 3174 pF provides reduced switching losses. Gate charge of 98 nC is the highest among substitutes, resulting in increased switching losses. Available in Cut Tape & Digi-Reel® packaging with 29180 units in stock.

Frequently Asked Questions (FAQ)

Q: Can the BSC035N04LSGATMA1 directly replace the STL140N4LLF5 in all applications?

A: The BSC035N04LSGATMA1 is electrically compatible with the STL140N4LLF5 for applications requiring up to 100A continuous drain current. Both devices share identical 40V Vdss rating, compatible gate voltage specifications, and overlapping operating temperature ranges. However, applications requiring the full 140A current capability of the STL140N4LLF5 require verification that the 100A rating of the substitute is sufficient. Package footprints differ (8-PowerTDFN vs. 8-PowerVDFN), requiring PCB layout evaluation.

Q: What is the significance of the on-state resistance (Rds On) difference between the main part and substitutes?

A: On-state resistance directly affects conduction losses and thermal performance. The STL140N4LLF5 exhibits 2.75 mOhm Rds On at 16A and 10V, while substitutes range from 3.0 to 3.5 mOhm. Lower Rds On reduces power dissipation during conduction, improving efficiency and reducing thermal management requirements. Applications with high switching frequency or continuous high-current operation benefit from lower Rds On values.

Q: Are package differences between PowerFlat™, TDSON, VSON, and PQFN critical for substitution?

A: Package differences require PCB layout evaluation. All substitute parts use 5x6mm form factor variants (8-PowerTDFN, 8-VSONP, 8-PQFN), which are mechanically compatible with similar footprints. However, pin configurations and thermal pad designs may differ. PCB artwork must be verified to ensure proper pad alignment, thermal via placement, and electrical connectivity before substitution.

Q: How does gate charge (Qg) affect circuit performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. The STL140N4LLF5 has 45 nC gate charge at 4.5V, while substitutes range from 50 to 98 nC at 10V. Higher gate charge increases switching losses and requires higher drive current from the gate driver. Applications with high switching frequency or limited gate driver capability benefit from lower gate charge values.

Q: What is the impact of input capacitance (Ciss) on circuit design?

A: Input capacitance affects gate drive requirements and switching speed. The STL140N4LLF5 has 5900 pF Ciss at 25V, while substitutes range from 3174 to 5100 pF at 20V. Lower input capacitance reduces gate charge and switching losses, enabling faster switching transitions. Applications with high switching frequency benefit from lower Ciss values.

Q: Are all substitute parts suitable for the same thermal management approach?

A: Power dissipation ratings vary among substitutes (69W to 150W Tc). The STL140N4LLF5 is rated for 80W (Tc). Substitutes with lower power ratings (69W) may require enhanced thermal management in high-power applications. The CSD18501Q5A with 150W (Tc) rating provides additional thermal margin. Thermal design must account for the specific power dissipation rating of the selected substitute.

Q: Can the STL140N4LLF5 be substituted in applications requiring 140A continuous current?

A: No substitute part listed provides 140A continuous drain current at 25°C (Tc). The highest-rated substitute is the BSC030N04NSGATMA1 and BSC035N04LSGATMA1 at 100A (Tc). Applications requiring the full 140A capability must retain the STL140N4LLF5 or parallel multiple lower-rated devices.

Q: What compliance certifications are maintained across all parts?

A: All parts listed (main and substitutes) maintain RoHS3 compliance, MSL Level 1 (Unlimited moisture sensitivity), REACH Unaffected status, and EAR99 ECCN classification. Regulatory and environmental compliance is consistent across all options.

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