STL100NH3LL N-Channel 30V 100A MOSFET Equivalent & Substitute Parts

Part Overview

The STL100NH3LL is an N-Channel 30V 100A MOSFET manufactured by STMicroelectronics in the STripFET™ III series. This device is rated for continuous drain current of 100A (Tc) with maximum power dissipation of 80W (Tc) in a PowerFlat™ (5x6) surface mount package. The part is currently classified as obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning.

Substitute parts must maintain compatibility across critical electrical parameters including drain-to-source voltage (Vdss), continuous drain current rating (Id), on-resistance (Rds On), and gate charge characteristics. Package compatibility and thermal performance are secondary considerations dependent on application requirements.

Substiute Parts

STL100NH3LL
STMicroelectronicsIn Stock: 6711STL100NH3LL Datasheet
STL100NH3LL
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CSD17301Q5A
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CSD17305Q5A
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CSD17306Q5A
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CSD17501Q5A
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FDMS7670
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FDMS7672
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IRFH7932TRPBF
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PSMN3R0-30YL,115
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PSMN3R5-30YL,115
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SIR466DP-T1-GE3
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Key Parameters

Parameter STL100NH3LL Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 100A (Tc) A
Rds On (Max) @ Id, Vgs 3.5 mOhm @ 12.5A, 10V mOhm
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 4.5V nC
Vgs(th) (Max) @ Id 2.5V @ 250µA V
Input Capacitance (Ciss) (Max) @ Vds 4450 pF @ 25V pF
Power Dissipation (Max) 80W (Tc) W
Operating Temperature Range -55 to 150 °C (TJ)
Package Type PowerFlat™ (5x6) 8-PowerVDFN
Mounting Type Surface Mount TR
RoHS Status ROHS3 Compliant
Product Status Obsolete

Substitute Part Grouping Explanation

Substitute parts for the STL100NH3LL are selected based on strict electrical parameter matching within the following criteria:

Primary Matching Parameters:

  • Drain-to-Source Voltage (Vdss): 30V (exact match required)
  • Continuous Drain Current (Id): 100A (Tc) (exact match required)
  • FET Type: N-Channel (exact match required)
  • Technology: MOSFET Metal Oxide (exact match required)

Secondary Compatibility Parameters:

  • On-Resistance (Rds On): Equivalent or lower values acceptable
  • Gate Charge (Qg): Lower values preferred for reduced switching losses
  • Vgs(th): Threshold voltage within compatible drive voltage ranges
  • Input Capacitance (Ciss): Lower values preferred for faster switching
  • Operating Temperature Range: Minimum -55°C to +150°C required
  • RoHS3 Compliance: Required for regulatory alignment

Package Considerations: Substitute parts may utilize different surface mount package variants (8-VSONP, 8-PQFN, LFPAK56, PowerPAK® SO-8) provided the physical footprint and thermal characteristics are evaluated for the specific application. All listed substitutes maintain 5x6mm or equivalent thermal performance envelopes.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id (A) @ 25°C Rds On (mOhm) Qg (nC) Vgs(th) (V) Ciss (pF) Power Diss. (W) Temp Range (°C) Package Status
STL100NH3LL STMicroelectronics 30 100 (Tc) 3.5 @ 12.5A, 10V 40 @ 4.5V 2.5 @ 250µA 4450 @ 25V 80 (Tc) -55 to 150 8-PowerVDFN Obsolete
CSD17501Q5A Texas Instruments 30 100 (Tc) 2.9 @ 25A, 10V 17 @ 4.5V 1.8 @ 250µA 2630 @ 15V 3.2 (Ta) -55 to 150 8-PowerTDFN Active
CSD17305Q5A Texas Instruments 30 100 (Tc) 3.4 @ 30A, 8V 18.3 @ 4.5V 1.6 @ 250µA 2600 @ 15V 3.1 (Ta) -55 to 150 8-PowerTDFN Active
CSD17306Q5A Texas Instruments 30 100 (Tc) 3.7 @ 22A, 8V 15.3 @ 4.5V 1.6 @ 250µA 2170 @ 15V 3.2 (Ta) -55 to 150 8-PowerTDFN Active
CSD17301Q5A Texas Instruments 30 100 (Tc) 2.6 @ 25A, 8V 25 @ 4.5V 1.55 @ 250µA 3480 @ 15V 3.2 (Ta) -55 to 150 8-PowerTDFN Active
IRFH7932TRPBF Infineon Technologies 30 104 (Tc) 3.3 @ 25A, 10V 51 @ 4.5V 2.35 @ 100µA 4270 @ 15V 3.4 (Ta) -55 to 150 8-PowerVDFN Not For New Designs
PSMN3R5-30YL,115 Nexperia USA Inc. 30 100 (Tc) 3.5 @ 15A, 10V 41 @ 10V 2.15 @ 1mA 2458 @ 12V 74 (Tc) -55 to 175 SC-100, SOT-669 Not For New Designs
PSMN3R0-30YL,115 Nexperia USA Inc. 30 100 (Tc) 3.0 @ 15A, 10V 45.8 @ 10V 2.15 @ 1mA 2822 @ 12V 81 (Tc) -55 to 175 SC-100, SOT-669 Not For New Designs
FDMS7672 Fairchild Semiconductor 30 28 (Tc) 5.0 @ 19A, 10V 44 @ 10V 3.0 @ 250µA 2960 @ 15V 48 (Tc) -55 to 150 8-PowerTDFN Active
FDMS7670 Fairchild Semiconductor 30 42 (Tc) 3.8 @ 21A, 10V 56 @ 10V 3.0 @ 250µA 4105 @ 15V 62 (Tc) -55 to 150 8-PowerTDFN Active
SIR466DP-T1-GE3 Vishay Siliconix 30 40 (Tc) 3.5 @ 15A, 10V 65 @ 10V 2.4 @ 250µA 2730 @ 15V 54 (Tc) -55 to 150 PowerPAK® SO-8 Active

Engineering Selection Recommendations

Direct Equivalents (100A Tc Rating):

The following parts maintain the exact 100A (Tc) continuous drain current specification of the STL100NH3LL and are recommended as primary substitutes:

  • CSD17501Q5A (Texas Instruments, NexFET™ series, Active): Provides superior on-resistance performance (2.9 mOhm vs. 3.5 mOhm) and significantly reduced gate charge (17 nC vs. 40 nC). Lower input capacitance (2630 pF vs. 4450 pF) enables faster switching characteristics. RoHS3 compliant with unlimited moisture sensitivity rating. 8-PowerTDFN package requires PCB layout evaluation.

  • PSMN3R5-30YL,115 (Nexperia USA Inc., Not For New Designs): Matches on-resistance specification (3.5 mOhm) and provides extended operating temperature range to 175°C. Thermal performance (74W Tc) approaches the original part (80W Tc). LFPAK56/Power-SO8 package offers alternative thermal pathway. Product status limits recommendation for new designs.

  • PSMN3R0-30YL,115 (Nexperia USA Inc., Not For New Designs): Delivers improved on-resistance (3.0 mOhm) and thermal performance (81W Tc) matching the original specification. Extended temperature range to 175°C. Product status limits recommendation for new designs.

Secondary Equivalents (Reduced Current Rating):

The following parts provide 30V Vdss compatibility with reduced continuous drain current ratings and are suitable for applications where 100A (Tc) is not required:

  • CSD17305Q5A (Texas Instruments, NexFET™ series, Active): 100A (Tc) rating with 3.4 mOhm on-resistance and 18.3 nC gate charge. RoHS3 compliant.

  • CSD17306Q5A (Texas Instruments, NexFET™ series, Active): 100A (Tc) rating with 3.7 mOhm on-resistance and 15.3 nC gate charge. Lowest input capacitance (2170 pF) among Texas Instruments options. RoHS3 compliant.

  • CSD17301Q5A (Texas Instruments, NexFET™ series, Active): 100A (Tc) rating with superior 2.6 mOhm on-resistance. RoHS3 compliant.

  • IRFH7932TRPBF (Infineon Technologies, HEXFET® series, Not For New Designs): 104A (Tc) rating with 3.3 mOhm on-resistance. Product status indicates not recommended for new designs. MSL rating of 2 (1 Year) requires moisture control during storage and assembly.

Limited Substitutes (Current Derating Required):

The following parts operate at 30V Vdss but with significantly reduced continuous drain current ratings. Use only when application current requirements are below the specified ratings:

  • FDMS7672 (Fairchild Semiconductor, PowerTrench® series, Active): 28A (Tc) continuous rating. Higher on-resistance (5.0 mOhm) and gate charge (44 nC). Suitable only for reduced-current applications.

  • FDMS7670 (Fairchild Semiconductor, PowerTrench® series, Active): 42A (Tc) continuous rating. Acceptable on-resistance (3.8 mOhm) but elevated gate charge (56 nC). Suitable only for reduced-current applications.

  • SIR466DP-T1-GE3 (Vishay Siliconix, TrenchFET® series, Active): 40A (Tc) continuous rating. Matches on-resistance (3.5 mOhm) but elevated gate charge (65 nC). Suitable only for reduced-current applications.

Compliance and Regulatory Status:

All recommended substitutes maintain RoHS3 compliance and REACH unaffected status consistent with the original STL100NH3LL. Moisture sensitivity levels are MSL 1 (Unlimited) for all primary recommendations except IRFH7932TRPBF (MSL 2, 1 Year).

Frequently Asked Questions (FAQ)

Q: Can CSD17501Q5A directly replace STL100NH3LL in existing designs?

A: CSD17501Q5A maintains identical 30V Vdss and 100A (Tc) specifications. The 8-PowerTDFN package differs from the original 8-PowerVDFN, requiring PCB footprint verification. Superior electrical performance (lower Rds On and Qg) typically improves circuit efficiency. Thermal performance (3.2W Ta vs. 80W Tc) reflects different measurement conditions; actual thermal behavior depends on application current profile and PCB thermal design.

Q: What is the difference between Tc and Ta current ratings?

A: Tc (case temperature) ratings represent continuous drain current at 25°C case temperature, typically used for high-current applications with active thermal management. Ta (ambient temperature) ratings represent continuous drain current at 25°C ambient temperature, typically used for lower-current or naturally cooled applications. The STL100NH3LL specifies 100A (Tc), indicating the rating applies at controlled case temperature. Substitute parts may specify both ratings; use the Tc rating for direct comparison.

Q: Why do some substitutes show lower power dissipation than the original part?

A: Power dissipation specifications reflect different measurement conditions and package thermal characteristics. The STL100NH3LL specifies 80W (Tc), while many substitutes specify 3.2W (Ta). These are not directly comparable; actual power dissipation in an application depends on on-resistance, current level, and duty cycle. Lower on-resistance values (e.g., CSD17501Q5A at 2.9 mOhm vs. 3.5 mOhm) reduce I²R losses and improve efficiency.

Q: Are PSMN3R5-30YL,115 and PSMN3R0-30YL,115 suitable for new designs?

A: Both parts are classified as "Not For New Designs" by the manufacturer. They are suitable for replacement in existing production or legacy systems but should not be selected for new product development. For new designs, prioritize CSD17501Q5A or other active-status alternatives from Texas Instruments or Infineon.

Q: What package considerations apply when substituting the STL100NH3LL?

A: The original STL100NH3LL uses PowerFlat™ (5x6) in 8-PowerVDFN package. Primary substitutes use 8-PowerTDFN (Texas Instruments NexFET™ series) or SC-100/SOT-669 (Nexperia LFPAK56). All maintain 5x6mm footprint compatibility. PowerPAK® SO-8 (Vishay SIR466) uses different pinout; verify schematic compatibility before substitution. Thermal vias and PCB copper area requirements may differ; consult package datasheets for thermal design specifications.

Q: Which substitute offers the best on-resistance performance?

A: CSD17301Q5A provides the lowest on-resistance at 2.6 mOhm (@ 25A, 8V), followed by CSD17501Q5A at 2.9 mOhm (@ 25A, 10V). Lower on-resistance reduces conduction losses and heat generation. Selection depends on gate drive voltage availability; CSD17301Q5A operates at 8V minimum while CSD17501Q5A requires 10V minimum for specified Rds On performance.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Lower gate charge (e.g., CSD17306Q5A at 15.3 nC vs. STL100NH3LL at 40 nC) reduces switching losses and enables faster switching frequencies. Higher gate charge (e.g., FDMS7670 at 56 nC) increases switching losses and may require higher gate drive current. Selection depends on switching frequency and gate driver capability.

Q: Can parts with reduced current ratings (FDMS7672, SIR466) be used in 100A applications?

A: No. FDMS7672 (28A Tc) and SIR466 (40A Tc) are rated for significantly lower continuous current than the STL100NH3LL (100A Tc). Using these parts in 100A applications will cause excessive junction temperature rise and device failure. These parts are suitable only for applications requiring 28A or 40A respectively. Verify actual application current requirements before selecting reduced-rating substitutes.

Q: What moisture sensitivity level (MSL) considerations apply?

A: Most recommended substitutes carry MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. IRFH7932TRPBF carries MSL 2 (1 Year), requiring storage in dry conditions and limiting shelf life to one year from manufacturing date. MSL 2 parts require baking before reflow soldering if exposed to ambient humidity. For procurement planning, prioritize MSL 1 parts to avoid moisture management complexity.

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