STH13009 Equivalent & Substitute Parts

Part Overview

The STH13009 is an NPN bipolar junction transistor manufactured by STMicroelectronics, rated for 400 V collector-emitter breakdown voltage and 12 A maximum collector current in a Through Hole TO-220-3 package. This device is designed for high-voltage switching and amplification applications requiring 100 W power dissipation capability.

The STH13009 is classified as obsolete. Locating equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs, repairs, and system upgrades. Active alternatives with matching or superior electrical characteristics are available from alternative manufacturers.

Substiute Parts

STH13009

STMicroelectronicsIn Stock: 816STH13009 Datasheet

Current PartRFQ

FJP13009TU

onsemiIn Stock: 1464FJP13009TU Datasheet

DirectRFQ

BUJ106A,127

WeEn SemiconductorsIn Stock: 818BUJ106A,127 Datasheet

SimilarRFQ

FJP13009H2TU

onsemiIn Stock: 20775FJP13009H2TU Datasheet

SimilarRFQ

PHE13009,127

WeEn SemiconductorsIn Stock: 695PHE13009,127 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the STH13009 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Transistor Type: NPN configuration
• Voltage Rating: Minimum 400 V collector-emitter breakdown voltage
• Current Rating: Minimum 12 A maximum collector current
• Power Dissipation: Minimum 100 W capability
• Package: TO-220-3 Through Hole mounting
• Operating Temperature: 150°C junction temperature rating

Substitution Categories:

Direct Equivalents maintain all primary electrical specifications (400 V, 12 A, 100 W) with identical or superior DC current gain characteristics and active product status.

Similar Alternatives meet the core voltage and current requirements but may have reduced power ratings (80 W) or slightly lower collector current specifications (10 A). These parts are suitable for applications where the full 100 W dissipation is not required.

All substitute parts listed are RoHS compliant and operate within the same temperature range as the original device.

Parameter Comparison

Engineering Selection Recommendations

Direct Substitutes (Preferred for Pin-Compatible Replacement):

FJP13009TU and FJP13009H2TU (onsemi) are active products that maintain the full electrical specification envelope of the STH13009. Both devices are rated for 400 V, 12 A, and 100 W with TO-220-3 packaging. FJP13009H2TU offers higher inventory availability (20,725 units) and improved DC current gain (15 @ 5A, 5V) compared to FJP13009TU (8 @ 5A, 5V). Both are ROHS3 compliant and suitable for direct replacement in existing designs.

Alternative Substitutes (For Applications with Reduced Power Requirements):

BUJ106A,127 (WeEn Semiconductors) and PHE13009,127 (WeEn Semiconductors) are active products with 400 V rating and TO-220-3 packaging. BUJ106A,127 is rated for 10 A and 80 W, while PHE13009,127 is rated for 12 A and 80 W. These alternatives are suitable for applications where the full 100 W dissipation capability is not required. Both are RoHS compliant.

Selection Basis:

All substitute parts are active products with established supply chains, ensuring long-term component availability. The onsemi FJP13009 series (both variants) provides the closest electrical match to the obsolete STH13009 with identical voltage, current, and power ratings. The WeEn Semiconductors alternatives provide viable options for designs with reduced thermal requirements.

Frequently Asked Questions (FAQ)

Q: Can FJP13009TU and FJP13009H2TU be used interchangeably with STH13009?

A: Yes. Both onsemi devices are pin-compatible TO-220-3 packages with identical 400 V, 12 A, and 100 W ratings. The primary difference is DC current gain specification: FJP13009H2TU specifies 15 @ 5A, 5V versus FJP13009TU at 8 @ 5A, 5V. Both are suitable for direct replacement.

Q: What is the difference between BUJ106A,127 and PHE13009,127?

A: Both are WeEn Semiconductors products in TO-220-3 packages rated for 400 V. BUJ106A,127 is rated for 10 A and 80 W, while PHE13009,127 is rated for 12 A and 80 W. PHE13009,127 provides higher current capacity and is closer to the STH13009 specification. Both have reduced power dissipation compared to the original device.

Q: Are all substitute parts RoHS compliant?

A: Yes. FJP13009TU and FJP13009H2TU are ROHS3 compliant. BUJ106A,127 and PHE13009,127 are RoHS compliant. All substitute parts meet environmental compliance requirements.

Q: What is the significance of the 4MHz transition frequency listed for onsemi parts?

A: The FJP13009TU and FJP13009H2TU specify 4MHz transition frequency, indicating switching capability at this frequency. The STH13009 does not specify this parameter. This additional specification in the onsemi devices does not restrict their use as substitutes and may provide enhanced performance in switching applications.

Q: Can I use BUJ106A,127 or PHE13009,127 if my application requires 100 W dissipation?

A: BUJ106A,127 and PHE13009,127 are rated for 80 W maximum power dissipation. These parts are not suitable for applications requiring the full 100 W capability of the STH13009. Use FJP13009TU or FJP13009H2TU for 100 W applications.

Q: Are there any differences in saturation voltage between the substitute parts?

A: Yes. Saturation voltage varies across the substitute parts at different test conditions. STH13009 specifies 2V @ 2.4A, 12A. FJP13009TU and FJP13009H2TU specify 3V @ 3A, 12A. BUJ106A,127 specifies 1V @ 1.2A, 6A. PHE13009,127 specifies 2V @ 1.6A, 8A. These differences reflect different measurement conditions and do not prevent substitution in most applications.

Q: What is the moisture sensitivity level of the substitute parts?

A: FJP13009TU and FJP13009H2TU list moisture sensitivity as Not Applicable. BUJ106A,127 and PHE13009,127 specify MSL 1 (Unlimited), matching the STH13009 specification. All parts are suitable for standard handling and storage conditions.