STGY80H65DFB IGBT Equivalent & Substitute Parts

Part Overview

The STGY80H65DFB is an IGBT Trench Field Stop device manufactured by STMicroelectronics, rated for 650 V collector-emitter breakdown voltage and 120 A maximum collector current with 469 W maximum power dissipation. The device is packaged in TO-247-3 through-hole configuration and is currently classified as obsolete product status.

Due to its obsolete classification, direct replacement with active production alternatives is necessary for new designs and ongoing system support. Equivalent and substitute parts listed in this reference maintain the core electrical and mechanical parameters required for functional interchangeability within the specified operating envelope.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	650	V
Current - Collector (Ic) (Max)	120	A
Current - Collector Pulsed (Icm)	240	A
Power - Max	469	W
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 80A	V
Gate Charge	414	nC
Switching Energy (on/off)	2.1 / 1.5	mJ
Td (on/off) @ 25°C	84 / 280	ns
Operating Temperature Range	-55 to 175	°C (TJ)
Package / Case	TO-247-3	—
Mounting Type	Through Hole	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STGY80H65DFB is determined by the following critical parameters:

Voltage Rating: All substitute parts maintain 650 V collector-emitter breakdown voltage, ensuring compatibility with the same circuit voltage envelope.

Current Rating: Substitute parts are grouped by maximum collector current capacity. Parametric equivalents maintain 120 A rating. Similar parts with 100 A to 120 A ratings are functionally compatible for applications not requiring the full 120 A specification.

Power Dissipation: Maximum power ratings range from 340 W to 469 W across the substitute group. Parts with lower power ratings require thermal design verification for equivalent thermal performance.

Package Configuration: All substitute parts use TO-247-3 through-hole mounting, with variants including standard TO-247 and TO-247 long leads. Mechanical compatibility is maintained across these package variants.

IGBT Type: Parametric equivalents use identical Trench Field Stop technology. Similar parts include both Trench Field Stop and PT (Punch-Through) IGBT types, which differ in internal structure but maintain electrical compatibility within the specified parameter ranges.

Switching Characteristics: Gate charge, switching delay times, and switching energy vary across the substitute group. Applications with specific switching frequency or EMI requirements must verify these parameters against circuit design specifications.

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max) A	Icm A	Power (Max) W	Vce(on) V	Gate Charge nC	Switching Energy (on/off) mJ	Package	IGBT Type
STGY80H65DFB	STMicroelectronics	Obsolete	120	240	469	2.0	414	2.1 / 1.5	TO-247-3	Trench Field Stop
STGW80H65DFB	STMicroelectronics	Active	120	240	469	2.0	414	2.1 / 1.5	TO-247-3	Trench Field Stop
STGW80H65FB	STMicroelectronics	Active	120	240	469	2.0	414	2.1 / 1.5	TO-247-3	Trench Field Stop
STGWA80H65FB	STMicroelectronics	Active	120	240	469	2.0	414	2.1 / 1.5	TO-247 Long Leads	Trench Field Stop
FGH60T65SHD-F155	onsemi	Active	120	180	349	2.1	102	1.69 / 0.63	TO-247-3	Trench Field Stop
IXXH40N65B4	IXYS	Active	120	240	455	1.8	77	1.4 / 0.56	TO-247-3	PT
IXXH60N65B4	IXYS	Active	116	250	455	2.0	95	3.13 / 1.15	TO-247-3	PT
IXXH60N65B4H1	IXYS	Active	116	230	380	2.0	95	3.13 / 1.15	TO-247-3	PT
IXXH60N65C4	IXYS	Active	118	240	455	2.2	94	3.2 / 0.83	TO-247-3	PT
FGH50T65UPD	onsemi	Not For New Designs	100	150	340	2.3	230	2.7 / 0.74	TO-247-3	Trench Field Stop
NGTB50N65FL2WG	onsemi	Active	100	200	417	2.0	220	1.5 / 0.46	TO-247-3	Trench Field Stop

Engineering Selection Recommendations

Parametric Equivalents (Direct Replacement):

STGW80H65DFB, STGW80H65FB, and STGWA80H65FB are parametric equivalents manufactured by STMicroelectronics with active product status. These parts maintain identical electrical specifications to the STGY80H65DFB across all critical parameters: 650 V voltage rating, 120 A collector current, 469 W power dissipation, and identical switching characteristics. STGW80H65DFB and STGW80H65FB differ only in package designation (TO-247 versus TO-247-3), while STGWA80H65FB features extended leads for specific PCB layout requirements. All three are ROHS3 compliant and REACH unaffected. These parts are recommended as primary replacements for obsolete STGY80H65DFB applications.

Active Substitute Parts (Functional Compatibility):

FGH60T65SHD-F155 (onsemi) maintains 120 A collector current and 650 V voltage rating with active product status. This part exhibits lower gate charge (102 nC versus 414 nC) and faster switching times, resulting in reduced switching energy. Power dissipation is lower at 349 W. This part is suitable for applications where improved switching performance and reduced gate drive requirements are beneficial.

IXXH40N65B4 (IXYS) maintains 120 A collector current and 650 V voltage rating with active product status. This PT-type IGBT exhibits significantly lower gate charge (77 nC) and lower Vce(on) (1.8 V), resulting in reduced conduction and switching losses. Power dissipation is 455 W. This part is suitable for high-efficiency applications where lower losses are prioritized.

IXXH60N65B4, IXXH60N65B4H1, and IXXH60N65C4 (IXYS) maintain 116–118 A collector current and 650 V voltage rating with active product status. These PT-type IGBTs exhibit lower gate charge (94–95 nC) compared to the main part. Power dissipation ranges from 380 W to 455 W. These parts are suitable for applications where the slightly reduced current rating is acceptable and lower switching losses are required.

NGTB50N65FL2WG (onsemi) is rated for 100 A collector current and 650 V voltage rating with active product status. This Trench Field Stop IGBT maintains identical Vce(on) (2.0 V) to the main part. Power dissipation is 417 W. This part is suitable for applications where 100 A current capacity is sufficient and Trench Field Stop technology is required.

Not Recommended for New Designs:

FGH50T65UPD (onsemi) carries "Not For New Designs" product status and should not be selected for new applications despite meeting voltage and current specifications.

Frequently Asked Questions (FAQ)

Q: Can STGW80H65DFB directly replace STGY80H65DFB without circuit modification?

A: Yes. STGW80H65DFB is a parametric equivalent with identical electrical specifications and TO-247-3 package configuration. No circuit modification is required. The primary difference is active product status versus obsolete status.

Q: What is the difference between STGW80H65FB and STGWA80H65FB?

A: Both parts maintain identical electrical specifications. STGW80H65FB uses standard TO-247-3 package leads. STGWA80H65FB features extended leads (TO-247 Long Leads) for specific PCB layout requirements. Selection depends on PCB hole spacing and lead length requirements.

Q: Can IXYS IXXH-series parts replace the STMicroelectronics STGY80H65DFB?

A: IXYS IXXH-series parts are functionally compatible within the 650 V and 100–120 A operating envelope. However, these are PT-type IGBTs rather than Trench Field Stop devices. They exhibit different switching characteristics: lower gate charge, lower Vce(on), and different switching energy profiles. Circuit performance may differ, particularly in switching frequency and EMI characteristics. Thermal design verification is required due to lower power dissipation ratings in some variants.

Q: Why does FGH60T65SHD-F155 have lower gate charge than STGY80H65DFB?

A: FGH60T65SHD-F155 is a newer generation Trench Field Stop IGBT with optimized gate structure, resulting in 102 nC gate charge versus 414 nC for STGY80H65DFB. Lower gate charge reduces gate drive power requirements and enables faster switching transitions. This is a design improvement, not a limitation.

Q: Is thermal performance equivalent across all substitute parts?

A: No. Maximum power dissipation varies from 340 W (FGH50T65UPD) to 469 W (STMicroelectronics parametric equivalents). Thermal design must account for the specific power rating of the selected part. Parts with lower power ratings require verification that circuit thermal conditions remain within safe operating limits.

Q: Can parts rated for 100 A replace a 120 A application?

A: Only if the application circuit does not require the full 120 A specification. NGTB50N65FL2WG and FGH50T65UPD are rated for 100 A maximum collector current. Exceeding this rating violates device specifications. Application current requirements must be verified before selection.

Q: What is the significance of "Not For New Designs" status?

A: FGH50T65UPD carries this status, indicating the manufacturer does not recommend this part for new product development. While the part may be functionally compatible, long-term availability and support cannot be guaranteed. Active status parts are preferred for new designs.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All parts listed in this reference maintain ROHS3 compliance and REACH unaffected status, meeting environmental and regulatory requirements for industrial and commercial applications.

Q: How do switching energy differences affect circuit design?

A: Switching energy directly impacts gate drive circuit design and EMI performance. Parts with lower switching energy (such as FGH60T65SHD-F155 at 1.69 mJ on-state) generate less electromagnetic interference and require less gate drive power. Parts with higher switching energy (such as IXXH60N65B4 at 3.13 mJ on-state) may require gate drive circuit optimization to manage switching losses and EMI.

Q: What package considerations apply to through-hole TO-247 variants?

A: All parts use through-hole TO-247-3 or TO-247 package configuration. Standard TO-247-3 and TO-247 packages are mechanically compatible with identical pin spacing. TO-247 Long Leads (STGWA80H65FB) feature extended leads for specific PCB applications. Verify PCB hole spacing and lead length requirements before selection.

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