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STGWA60V60DF IGBT Equivalent & Substitute Parts
Part Overview
The STGWA60V60DF is an IGBT (Insulated Gate Bipolar Transistor) manufactured by STMicroelectronics, classified as a Trench Field Stop device rated for 600V collector-emitter breakdown voltage and 80A maximum collector current. This component is designed for through-hole mounting in TO-247-3 package configuration and is currently in active product status with full RoHS3 compliance.
Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across critical parameters including voltage rating, current capacity, power dissipation, switching characteristics, and package specifications. Identifying qualified substitutes ensures design flexibility and supply chain continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| IGBT Type | Trench Field Stop | — |
| Voltage - Collector Emitter Breakdown (Max) | 600 | V |
| Current - Collector (Ic) (Max) | 80 | A |
| Current - Collector Pulsed (Icm) | 240 | A |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 60A | V |
| Power - Max | 375 | W |
| Switching Energy (on) | 750 | µJ |
| Switching Energy (off) | 550 | µJ |
| Gate Charge | 334 | nC |
| Td (on/off) @ 25°C | 60/208 | ns |
| Reverse Recovery Time (trr) | 74 | ns |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package / Case | TO-247-3 | — |
| Mounting Type | Through Hole | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the STGWA60V60DF is determined by strict equivalence across the following critical parameters:
Electrical Equivalence Criteria:
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 80A
- Current - Collector Pulsed (Icm): 240A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
- Power - Max: 375W
- Switching Energy (on/off): 750µJ / 550µJ
- Gate Charge: 334 nC
- Td (on/off) @ 25°C: 60ns / 208ns
- Reverse Recovery Time (trr): 74 ns
- Operating Temperature Range: -55°C to 175°C (TJ)
Mechanical Equivalence Criteria:
- Package / Case: TO-247-3
- Mounting Type: Through Hole
- IGBT Type: Trench Field Stop
- Input Type: Standard
Compliance Equivalence Criteria:
- RoHS Status: ROHS3 Compliant
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- REACH Status: REACH Unaffected
The STGW60V60DF meets all substitution criteria and is classified as a parametric equivalent to the STGWA60V60DF.
Parameter Comparison
| Parameter | STGWA60V60DF | STGW60V60DF | Match |
|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | ✓ |
| Category | Transistors, IGBTs | Transistors, IGBTs | ✓ |
| IGBT Type | Trench Field Stop | Trench Field Stop | ✓ |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | 600 V | ✓ |
| Current - Collector (Ic) (Max) | 80 A | 80 A | ✓ |
| Current - Collector Pulsed (Icm) | 240 A | 240 A | ✓ |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 60A | 2.3V @ 15V, 60A | ✓ |
| Power - Max | 375 W | 375 W | ✓ |
| Switching Energy (on) | 750 µJ | 750 µJ | ✓ |
| Switching Energy (off) | 550 µJ | 550 µJ | ✓ |
| Input Type | Standard | Standard | ✓ |
| Gate Charge | 334 nC | 334 nC | ✓ |
| Td (on/off) @ 25°C | 60ns/208ns | 60ns/208ns | ✓ |
| Reverse Recovery Time (trr) | 74 ns | 74 ns | ✓ |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | ✓ |
| Mounting Type | Through Hole | Through Hole | ✓ |
| Package / Case | TO-247-3 | TO-247-3 | ✓ |
| Product Status | Active | Active | ✓ |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ✓ |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | ✓ |
| REACH Status | REACH Unaffected | REACH Unaffected | ✓ |
Engineering Selection Recommendations
STGW60V60DF as Direct Substitute:
The STGW60V60DF is a direct parametric equivalent to the STGWA60V60DF. Both components share identical electrical specifications, mechanical packaging, and compliance certifications. Selection between these parts is based on availability and supply chain considerations.
Product Status and Compliance:
Both the STGWA60V60DF and STGW60V60DF maintain active product status with STMicroelectronics. Both components are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for industrial and commercial applications. Moisture sensitivity level MSL 1 (Unlimited) indicates no special storage or handling requirements beyond standard component handling practices.
Application Continuity:
Circuits designed for the STGWA60V60DF operate without modification when the STGW60V60DF is substituted. Gate drive circuits, thermal management, and PCB layout considerations remain unchanged due to identical electrical and thermal characteristics.
Frequently Asked Questions (FAQ)
Q: Can the STGW60V60DF replace the STGWA60V60DF in existing designs?
A: Yes. The STGW60V60DF is a parametric equivalent with identical electrical specifications, switching characteristics, and package configuration. No circuit modifications are required.
Q: Are there differences in gate charge or switching times between these parts?
A: No. Both components specify 334 nC gate charge and identical turn-on/turn-off delay times of 60ns/208ns at 25°C under the same test conditions (400V, 60A, 4.7Ohm, 15V).
Q: Do both parts use the same TO-247-3 package?
A: Yes. Both the STGWA60V60DF and STGW60V60DF use TO-247-3 through-hole package with identical pin configuration and mechanical dimensions.
Q: What is the maximum junction temperature for both parts?
A: Both components operate across the same temperature range of -55°C to 175°C (TJ), with identical thermal characteristics and power dissipation ratings of 375W maximum.
Q: Are there any compliance or regulatory differences?
A: No. Both parts are ROHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity rating. They meet identical regulatory requirements.
Q: What is the reverse recovery time specification?
A: Both components specify a reverse recovery time (trr) of 74 ns, indicating identical switching behavior in freewheeling diode applications.
Q: Can these parts be used interchangeably in high-frequency switching applications?
A: Yes. Identical switching energy specifications (750µJ on, 550µJ off) and delay times ensure equivalent performance in high-frequency converter and inverter topologies.
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