STGW75M65DF2 Equivalent & Substitute Parts

Part Overview

The STGW75M65DF2 is an IGBT Trench Field Stop device manufactured by STMicroelectronics, rated for 650 V collector-emitter breakdown voltage and 120 A maximum collector current. This through-hole TO-247-3 packaged transistor is designed for high-power switching applications requiring robust gate control and efficient energy conversion. The device maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating. Substitute parts are identified when electrical parameters, thermal ratings, and mechanical compatibility remain within specification for direct circuit board replacement.

Substiute Parts

STGW75M65DF2

STMicroelectronicsIn Stock: 1265STGW75M65DF2 Datasheet

Current PartRFQ

STGWA75M65DF2

STMicroelectronicsIn Stock: 688196STGWA75M65DF2 Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the STGW75M65DF2 are identified based on electrical and mechanical parameter equivalence. The substitution logic requires matching the following critical parameters:

• Voltage Rating: 650 V collector-emitter breakdown voltage
• Current Rating: 120 A maximum collector current and 225 A pulsed collector current
• On-State Voltage: 2.1 V maximum at specified gate and collector conditions
• Switching Characteristics: Gate charge, turn-on/turn-off delay times, and reverse recovery time
• Thermal Performance: 468 W maximum power dissipation and -55°C to 175°C operating temperature range
• Mounting and Packaging: Through-hole configuration with TO-247 package family compatibility
• Compliance: RoHS3 compliance and REACH unaffected status

The STGWA75M65DF2 qualifies as a parametric equivalent substitute because it maintains identical electrical specifications across all critical parameters while offering TO-247 long leads variant packaging within the same TO-247 package family.

Parameter Comparison

Engineering Selection Recommendations

Both the STGW75M65DF2 and STGWA75M65DF2 maintain Active product status from STMicroelectronics and carry full RoHS3 compliance certification. The devices are electrically and thermally equivalent across all specified parameters. Selection between these parts is determined by lead length requirements within the TO-247 package family. The STGW75M65DF2 features standard TO-247-3 lead configuration, while the STGWA75M65DF2 provides extended TO-247 long leads variant. Both devices satisfy REACH regulatory requirements and carry unlimited moisture sensitivity rating, eliminating environmental storage constraints. Component selection should be based on printed circuit board layout specifications and lead length accommodation within the target application.

Frequently Asked Questions (FAQ)

Q: Can the STGWA75M65DF2 directly replace the STGW75M65DF2 in existing circuit designs?

A: Yes. Both devices are electrically and thermally equivalent with identical voltage, current, switching, and thermal specifications. The primary difference is lead length within the TO-247 package family. Direct substitution is valid when circuit board layout accommodates the extended lead configuration of the STGWA75M65DF2.

Q: What is the difference between TO-247-3 and TO-247 long leads packaging?

A: Both variants belong to the TO-247 package family and maintain the same three-terminal configuration (collector, gate, emitter). The TO-247 long leads variant provides extended lead length compared to standard TO-247-3, affecting board-level mounting and spacing considerations.

Q: Are there any compliance or regulatory differences between these substitute parts?

A: No. Both the STGW75M65DF2 and STGWA75M65DF2 carry identical RoHS3 compliance, REACH unaffected status, and unlimited moisture sensitivity rating (MSL 1). Regulatory and environmental requirements are equivalent.

Q: What parameters must remain identical for substitution to be valid?

A: Voltage rating (650 V), maximum collector current (120 A), pulsed collector current (225 A), on-state voltage (2.1 V), gate charge (225 nC), switching delays (47/125 ns), reverse recovery time (165 ns), power rating (468 W), and operating temperature range (-55 to 175°C) must all match. These parameters define functional equivalence in high-power switching applications.

Q: Can these IGBT devices be used interchangeably in parallel configurations?

A: Electrical equivalence supports parallel operation from a specification standpoint. However, parallel device implementation requires additional circuit design considerations beyond parameter matching, including gate drive distribution and current sharing networks.

Q: What is the significance of the Trench Field Stop IGBT technology in these devices?

A: Trench Field Stop technology defines the internal semiconductor structure and switching characteristics. Both substitute parts employ identical Trench Field Stop architecture, ensuring matched switching energy (690 µJ on, 2.54 mJ off) and reverse recovery behavior (165 ns).