STGP30V60F IGBT Equivalent & Substitute Parts

Part Overview

The STGP30V60F is a Trench Field Stop IGBT manufactured by STMicroelectronics, rated for 600V collector-emitter breakdown voltage and 60A maximum collector current with 260W power dissipation capability. The device is packaged in a TO-220-3 through-hole configuration and is classified as obsolete. Due to its obsolete product status, identification of functionally equivalent substitute components is necessary to maintain design continuity and ensure supply chain availability for applications requiring comparable electrical and thermal performance characteristics.

Substiute Parts

STGP30V60F
STMicroelectronicsIn Stock: 3732STGP30V60F Datasheet
STGP30V60F
Current Part
STGP30H65DFB2
STMicroelectronicsIn Stock: 1038STGP30H65DFB2 Datasheet
STGP30H65DFB2
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Power - Max 260 W
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A V
Gate Charge 163 nC
Switching Energy (on/off) 383µJ / 233µJ µJ
Td (on/off) @ 25°C 45ns / 189ns ns
Operating Temperature Range -55 to 175 °C (TJ)
Package / Case TO-220-3
Mounting Type Through Hole
IGBT Type Trench Field Stop
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the STGP30V60F is determined by electrical and mechanical compatibility within the following critical parameters:

Voltage Rating: The substitute part must maintain a collector-emitter breakdown voltage rating sufficient for the application. The STGP30H65DFB2 provides 650V, which exceeds the original 600V specification and is therefore compatible for voltage-constrained applications.

Current Rating: The substitute part current capacity must meet or exceed the application requirement. The STGP30H65DFB2 is rated for 50A maximum collector current, which is lower than the original 60A specification. This substitution is valid only for applications requiring 50A or less.

Package and Mounting: Both parts utilize identical TO-220-3 through-hole packaging, ensuring mechanical and thermal interface compatibility without modification to printed circuit board layouts or heatsink mounting arrangements.

IGBT Type and Technology: Both parts employ Trench Field Stop IGBT technology, ensuring consistent switching characteristics and gate drive requirements.

Compliance and Certifications: Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for equivalent applications.

Parameter Comparison

Parameter STGP30V60F (Main Part) STGP30H65DFB2 (Substitute) Unit
Manufacturer STMicroelectronics STMicroelectronics
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 650 V
Current - Collector (Ic) (Max) 60 50 A
Current - Collector Pulsed (Icm) 120 90 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A 2.1V @ 15V, 30A V
Power - Max 260 167 W
Gate Charge 163 90 nC
Switching Energy (on) / (off) 383µJ / 233µJ 270µJ / 310µJ µJ
Td (on/off) @ 25°C 45ns / 189ns 18.4ns / 71ns ns
Operating Temperature Range -55 to 175 -55 to 175 °C (TJ)
Package / Case TO-220-3 TO-220-3
Mounting Type Through Hole Through Hole
Product Status Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Product Status Consideration: The STGP30V60F is classified as obsolete, whereas the STGP30H65DFB2 maintains active product status. Active status ensures continued manufacturing support, documented technical resources, and supply chain availability for new designs and production requirements.

Regulatory Compliance: Both parts satisfy ROHS3 compliance and REACH unaffected status, permitting direct substitution in applications subject to these regulatory frameworks without additional compliance verification.

Current Capacity Constraint: Selection of the STGP30H65DFB2 requires confirmation that the application current demand does not exceed 50A maximum collector current. Applications requiring the full 60A rating of the original part cannot utilize this substitute without circuit redesign or parallel device configuration.

Voltage Margin: The STGP30H65DFB2 provides 50V additional voltage margin (650V versus 600V), offering enhanced reliability in applications subject to voltage transients or overshoot conditions.

Thermal Performance: The STGP30H65DFB2 exhibits reduced maximum power dissipation (167W versus 260W). Thermal analysis is required to confirm that heatsink and thermal interface specifications remain adequate for the application's duty cycle and ambient temperature conditions.

Switching Characteristics: The STGP30H65DFB2 demonstrates reduced gate charge (90nC versus 163nC) and faster switching times (18.4ns on-time versus 45ns), resulting in lower gate drive power requirements and reduced switching losses in high-frequency applications.

Frequently Asked Questions (FAQ)

Q: Can the STGP30H65DFB2 directly replace the STGP30V60F in all applications?

A: Direct replacement is valid only for applications where the collector current requirement does not exceed 50A. The STGP30H65DFB2 is rated for 50A maximum, compared to the original part's 60A rating. Applications requiring the full 60A capacity require alternative solutions or circuit modification.

Q: What is the significance of the voltage rating difference between 600V and 650V?

A: The 650V rating of the STGP30H65DFB2 provides 50V additional margin above the original 600V specification. This higher rating accommodates voltage transients and overshoot without device stress, improving reliability in applications with variable or transient voltage conditions.

Q: Are the TO-220-3 packages mechanically identical?

A: Yes. Both the STGP30V60F and STGP30H65DFB2 utilize TO-220-3 through-hole packaging. No modifications to printed circuit board layouts, heatsink mounting hardware, or thermal interface materials are required for mechanical compatibility.

Q: How do the switching characteristics differ between these parts?

A: The STGP30H65DFB2 exhibits significantly faster switching times (18.4ns on-time and 71ns off-time versus 45ns and 189ns respectively) and lower gate charge (90nC versus 163nC). These characteristics reduce switching losses and gate drive power requirements, particularly beneficial in high-frequency switching applications.

Q: What thermal considerations apply to substitution?

A: The STGP30H65DFB2 has a lower maximum power rating (167W versus 260W). Thermal analysis must confirm that the application's duty cycle, switching frequency, and ambient temperature conditions remain within the thermal limits of the substitute part. Existing heatsink specifications may require re-evaluation.

Q: Are both parts compliant with current regulatory standards?

A: Yes. Both the STGP30V60F and STGP30H65DFB2 are ROHS3 compliant and REACH unaffected, satisfying regulatory requirements for equivalent applications without additional compliance documentation.

Q: Why is the STGP30V60F classified as obsolete?

A: Obsolete classification indicates that the manufacturer has discontinued production and support for this part. The STGP30H65DFB2, with active product status, represents the current generation equivalent offering improved performance characteristics and assured long-term availability.

Q: Can gate drive circuits designed for the STGP30V60F be used with the STGP30H65DFB2?

A: Gate drive circuits designed for the STGP30V60F are compatible with the STGP30H65DFB2. The reduced gate charge (90nC versus 163nC) of the substitute part results in lower gate drive power requirements, providing additional design margin. No circuit modifications are necessary.

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