STGP30H60DF IGBT Equivalent & Substitute Parts

Part Overview

The STGP30H60DF is an IGBT (Insulated Gate Bipolar Transistor) manufactured by STMicroelectronics, classified as a Trench Field Stop device rated for 600V collector-emitter breakdown voltage and 60A continuous collector current. This component is designed for high-efficiency switching applications in power conversion circuits and operates across an industrial temperature range of -40°C to 175°C. The device is currently in active production status with full RoHS3 compliance and REACH unaffected classification.

Substitute parts are identified when equivalent electrical performance parameters and mechanical compatibility are maintained across different manufacturers. Alternative IGBT devices meeting the same voltage, current, and thermal specifications enable design flexibility, supply chain diversification, and procurement optimization without requiring circuit redesign.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	600	V
Current - Collector (Ic) (Max)	60	A
Current - Collector Pulsed (Icm)	120	A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 30A	V
IGBT Type	Trench Field Stop	—
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—
Operating Temperature Range	-40 to 175	°C (TJ)
RoHS Status	ROHS3 Compliant	—
Product Status	Active	—

Substitute Part Grouping Explanation

Substitution eligibility for the STGP30H60DF is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
IGBT Type: Trench Field Stop

Mechanical Compatibility Criteria:

Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature Range: -40°C to 175°C (TJ)

Compliance & Regulatory Criteria:

RoHS Status: ROHS3 Compliant
Product Status: Active

The IGP30N60H3XKSA1 (Infineon Technologies) meets all electrical equivalence criteria and mechanical compatibility requirements, enabling direct substitution in circuit applications where the STGP30H60DF is specified.

Parameter Comparison

Parameter	STGP30H60DF (STMicroelectronics)	IGP30N60H3XKSA1 (Infineon Technologies)	Match Status
Voltage - Collector Emitter Breakdown (Max)	600 V	600 V	Equivalent
Current - Collector (Ic) (Max)	60 A	60 A	Equivalent
Current - Collector Pulsed (Icm)	120 A	120 A	Equivalent
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 30A	2.4V @ 15V, 30A	Equivalent
IGBT Type	Trench Field Stop	Trench Field Stop	Equivalent
Package / Case	TO-220-3	TO-220-3	Equivalent
Mounting Type	Through Hole	Through Hole	Equivalent
Operating Temperature Range	-40 to 175°C (TJ)	-40 to 175°C (TJ)	Equivalent
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Equivalent
Product Status	Active	Active	Equivalent

Engineering Selection Recommendations

STGP30H60DF (STMicroelectronics): Active production status with 1430 units in current inventory. ROHS3 compliant and REACH unaffected. Suitable for applications requiring STMicroelectronics supply chain qualification or existing design validation with this manufacturer's device.

IGP30N60H3XKSA1 (Infineon Technologies): Active production status with 1195 units in current inventory. ROHS3 compliant and REACH unaffected. Suitable for applications requiring Infineon Technologies supply chain qualification or design flexibility across multiple IGBT manufacturers. Electrical and mechanical parameters are fully equivalent to the STGP30H60DF.

Both devices meet identical regulatory compliance requirements and maintain active product status, ensuring long-term availability and supply chain stability. Selection between these parts is determined by manufacturer preference, inventory availability, or existing qualification requirements within the application circuit.

Frequently Asked Questions (FAQ)

Q: Can the IGP30N60H3XKSA1 be used as a direct replacement for the STGP30H60DF in existing designs?

A: Yes. Both devices share identical electrical ratings (600V, 60A continuous, 120A pulsed), identical Vce(on) specifications, identical IGBT Trench Field Stop architecture, and identical TO-220-3 through-hole packaging. No circuit modifications are required for substitution.

Q: Are there differences in switching performance between these two devices?

A: Switching energy and gate charge specifications differ between manufacturers. The STGP30H60DF specifies 350µJ (on) and 400µJ (off) switching energy with 105 nC gate charge. The IGP30N60H3XKSA1 specifies 1.17mJ total switching energy with 165 nC gate charge. These differences do not affect substitution eligibility but may influence circuit efficiency in specific applications. Refer to detailed datasheets for switching behavior analysis.

Q: Do both devices operate across the same temperature range?

A: Yes. Both the STGP30H60DF and IGP30N60H3XKSA1 operate across -40°C to 175°C junction temperature range, ensuring thermal compatibility in identical application environments.

Q: Are both devices RoHS3 compliant?

A: Yes. Both devices are ROHS3 compliant and REACH unaffected, meeting identical regulatory requirements for industrial and commercial applications.

Q: What is the significance of the TO-220-3 package for substitution?

A: The TO-220-3 package is a standardized through-hole configuration with three leads (collector, gate, emitter). Both devices use identical package geometry and pinout, enabling mechanical interchangeability on printed circuit boards without layout modifications.

Q: Are both devices currently in active production?

A: Yes. Both the STGP30H60DF and IGP30N60H3XKSA1 maintain active product status, ensuring continued availability and supply chain reliability for new designs and production runs.

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