STGP10NB60SFP IGBT Equivalent & Substitute Parts

Part Overview

The STGP10NB60SFP is a 600V, 23A IGBT transistor manufactured by STMicroelectronics in the PowerMESH™ series, housed in a TO-220-3 Full Pack through-hole package. This component is classified as obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this IGBT specification.

Substiute Parts

STGP10NB60SFP
STMicroelectronicsIn Stock: 4057STGP10NB60SFP Datasheet
STGP10NB60SFP
Current Part
STGF10NB60SD
STMicroelectronicsIn Stock: 1555STGF10NB60SD Datasheet
STGF10NB60SD
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 23 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 10A V
Power - Max 25 W
Switching Energy (on) 600 µJ
Switching Energy (off) 5 mJ
Gate Charge 33 nC
Td (on/off) @ 25°C 700ns/1.2µs ns/µs
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole -
Package / Case TO-220-3 Full Pack -
RoHS Status ROHS3 Compliant -
Moisture Sensitivity Level (MSL) 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitute parts for the STGP10NB60SFP are identified based on electrical and mechanical parameter equivalence within the IGBT transistor category. The substitution criteria are strictly limited to the following parameters:

Voltage rating (600V Collector Emitter Breakdown maximum), continuous collector current (23A maximum), pulsed collector current (80A), on-state voltage drop (1.75V @ 15V, 10A), maximum power dissipation (25W), switching energy characteristics (600µJ on, 5mJ off), gate charge (33nC), switching delay times (700ns on, 1.2µs off), operating temperature range (-55°C to 150°C junction temperature), through-hole mounting configuration, and TO-220-3 Full Pack package specification.

The STGF10NB60SD meets all these electrical and mechanical parameters identically to the main part, establishing it as a parametric equivalent within the PowerMESH™ series.

Parameter Comparison

Parameter STGP10NB60SFP STGF10NB60SD Match Status
Manufacturer STMicroelectronics STMicroelectronics Identical
Category Transistors, IGBTs Transistors, IGBTs Identical
Series PowerMESH™ PowerMESH™ Identical
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V Identical
Current - Collector (Ic) (Max) 23 A 23 A Identical
Current - Collector Pulsed (Icm) 80 A 80 A Identical
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 10A 1.75V @ 15V, 10A Identical
Power - Max 25 W 25 W Identical
Switching Energy (on) 600 µJ 600 µJ Identical
Switching Energy (off) 5 mJ 5 mJ Identical
Input Type Standard Standard Identical
Gate Charge 33 nC 33 nC Identical
Td (on/off) @ 25°C 700ns/1.2µs 700ns/1.2µs Identical
Test Condition 480V, 10A, 1kOhm, 15V 480V, 10A, 1kOhm, 15V Identical
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) Identical
Mounting Type Through Hole Through Hole Identical
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack Identical
Supplier Device Package TO-220FP TO-220FP Identical
RoHS Status ROHS3 Compliant ROHS3 Compliant Identical
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Identical
REACH Status REACH Unaffected REACH Unaffected Identical
ECCN EAR99 EAR99 Identical
HTSUS 8541.29.0095 8541.29.0095 Identical
Product Status Obsolete Active Different
Packaging - Tube Different

Engineering Selection Recommendations

The STGF10NB60SD is a direct parametric equivalent to the STGP10NB60SFP across all electrical and mechanical specifications. The primary distinction between these components is product status: the STGP10NB60SFP is classified as obsolete, while the STGF10NB60SD maintains active product status from STMicroelectronics.

For new designs and ongoing production requirements, the STGF10NB60SD is the appropriate selection. Both components carry identical RoHS3 compliance, REACH unaffected status, and EAR99 export classification. The STGF10NB60SD is supplied in tube packaging, whereas the original part packaging specification is not detailed. Both components maintain MSL Level 1 (unlimited moisture sensitivity), indicating no moisture-related handling restrictions.

The electrical performance, thermal operating range, switching characteristics, and gate drive requirements are identical between the two parts, supporting direct substitution in circuit applications designed for the STGP10NB60SFP.

Frequently Asked Questions (FAQ)

Q: Can the STGF10NB60SD be used as a direct replacement for the STGP10NB60SFP in existing designs?

A: Yes. The STGF10NB60SD is electrically and mechanically equivalent to the STGP10NB60SFP. All voltage ratings, current ratings, switching characteristics, thermal specifications, and package configurations are identical. No circuit modifications are required.

Q: What is the primary reason for substituting the STGP10NB60SFP?

A: The STGP10NB60SFP is classified as obsolete product status. The STGF10NB60SD is the active equivalent part from STMicroelectronics, ensuring continued supply chain availability and manufacturer support.

Q: Are there any differences in gate drive requirements between these parts?

A: No. Both parts have identical gate charge (33nC), switching delay times (700ns on, 1.2µs off), and standard input type specifications. Gate drive circuits designed for the STGP10NB60SFP operate identically with the STGF10NB60SD.

Q: Do both parts meet the same regulatory and compliance standards?

A: Yes. Both the STGP10NB60SFP and STGF10NB60SD are ROHS3 compliant, REACH unaffected, and classified under EAR99 export control. Both carry identical HTSUS classification (8541.29.0095).

Q: What is the difference in packaging between these parts?

A: The STGF10NB60SD is supplied in tube packaging. The original STGP10NB60SFP packaging specification is not detailed in the provided parameters. Both use the TO-220-3 Full Pack through-hole package configuration.

Q: Are the thermal and operating temperature specifications identical?

A: Yes. Both parts operate across the identical temperature range of -55°C to 150°C junction temperature (TJ) and have identical maximum power dissipation of 25W.

Q: Can I use the STGF10NB60SD in high-frequency switching applications?

A: Yes. The switching energy characteristics (600µJ on, 5mJ off) and switching delay times (700ns on, 1.2µs off) are identical to the original part, supporting the same frequency range and switching performance.

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